Error cache system with coarse and fine segments for power optimization

ABSTRACT

A memory device for storing data comprises a memory bank comprising a plurality of addressable memory cells, wherein the memory bank is divided into a plurality of segments. The memory device also comprises a cache memory operable for storing a second plurality of data words, wherein further each data word of the second plurality of data words is either awaiting write verification or is to be re-written into the memory bank. The cache memory is divided into a plurality of primary segments, wherein each primary segment of the cache memory is direct mapped to a corresponding segment of the plurality of segments of the memory bank, wherein each primary segment of the plurality of primary segments of the cache memory is sub-divided into a plurality of secondary segments, and each of the plurality of secondary segments comprises at least one counter for tracking a number of valid entries stored therein.

CROSS-REFERENCE TO RELATED APPLICATION

The present application is a Continuation-in-part of, claims the benefitand priority to U.S. application Ser. No. 16/275,088, Attorney DocketNo. SPIN-0051-01U00US, filed Feb. 13, 2019, entitled “A MULTI-CHIPMODULE FOR MRAM DEVICES,” which is a Continuation-in-part of, claims thebenefit and priority to U.S. application Ser. No. 16/118,137, AttorneyDocket No. SPIN-0002-15P07US, filed Aug. 30, 2018, entitled “A METHOD OFOPTIMIZING WRITE VOLTAGE BASED ON ERROR BUFFER OCCUPANCY,” which is aContinuation-in-part of, claims the benefit and priority to U.S.application Ser. No. 15/855,855, Attorney Docket No. SPIN-0002-07P01US,filed Dec. 27, 2017, entitled “SMART CACHE DESIGN TO PREVENT OVERFLOWFOR A MEMORY DEVICE WITH A DYNAMIC REDUNDANCY REGISTER,” and herebyincorporated by reference in its entirety, which is acontinuation-in-part of, claims the benefit of and priority to U.S.application Ser. No. 15/277,799 Attorney Docket SPIN-0002-01.01, filedSep. 27, 2016, entitled “DEVICE WITH DYNAMIC REDUNDANCY REGISTERS” andhereby incorporated by reference in its entirety.

FIELD

The present patent document relates to registers that are added todevices, and more particularly registers added to random access memory(RAM). The methods and devices described herein are particularly usefulin spin-transfer torque magnetic memory (STT-MRAM) devices.

BACKGROUND

Magnetoresistive random-access memory (“MRAM”) is a non-volatile memorytechnology that stores data through magnetic storage elements. Thesemagnetic storage elements are two ferromagnetic plates or electrodesthat can hold a magnetic field and are separated by a non-magneticmaterial, such as a non-magnetic metal or insulator. In general, one ofthe plates has its magnetization pinned (i.e., a “reference layer”),meaning that this layer has a higher coercivity than the other layer andrequires a larger magnetic field or spin-polarized current to change theorientation of its magnetization. The second plate is typically referredto as the free layer and its magnetization direction can be changed by asmaller magnetic field or spin-polarized current relative to thereference layer.

MRAM devices store information by changing the orientation of themagnetization of the free layer. In particular, based on whether thefree layer is in a parallel or anti-parallel alignment relative to thereference layer, either a “1” or a “0” can be stored in each MRAM cell.Due to the spin-polarized electron tunneling effect, the electricalresistance of the cell changes due to the orientation of themagnetization of the two layers. The cell's resistance will be differentfor the parallel and anti-parallel states and thus the cell's resistancecan be used to distinguish between a “1” and a “0.” MRAM devices aregenerally considered as non-volatile memory devices since they maintainthe information even when the power is off. The two plates can besub-micron in lateral size and the magnetization direction can still bestable with respect to thermal fluctuations.

MRAM devices are considered as the next generation structures for a widerange of memory applications. MRAM products based on spin torquetransfer switching are already making its way into large data storagedevices. Spin transfer torque magnetic random access memory (“STT-MRAM”)has an inherently stochastic write mechanism, wherein bits have certainprobability of write failure on any given write cycle. The writefailures are most generally random, and have a characteristic failurerate. A high write error rate (WER) may make the memory unreliable.Because STT-MRAM devices may have higher failure rates, the failuresneed to be recorded so that they may be fixed by, for example, usingre-write attempts.

Conventional STT-MRAM memories lack any structures (e.g., registers,cache memories) used to keep track of the errors. Furthermore, inconventional STT-MRAM devices any mechanism used to keep track of errorswould not have any safeguards against overflow. In other words,conventional STT-MRAM devices are typically not designed to preventoverflow in structures that may be used to keep track of the errors oreven to prevent such structures from filling up too rapidly. Also,conventional STT-MRAM devices would not have any way of managing powerconsumption by memory modules used to keep track of such errors.

In memory devices, and especially STT-MRAM, methods and systems forverifying and re-writing data words are beneficial. ConventionalSTT-MRAM memories, however, are not configured to prevent verify (orread) operations from occurring too close in proximity to writeoperations.

SUMMARY AND CLAIMABLE SUBJECT MATTER

In an embodiment, a device with dynamic redundancy registers isdisclosed. In one aspect, a memory device comprising random accessmemory (RAM) device, and specifically an STT-MRAM device, is provided.The present disclosure provides backup dynamic redundancy registers thatallow the device to operate with high write error rate (WER). Thedynamic redundancy registers allow verifies, re-writes, and relocationof data words that fail to write correctly to a memory bank, generally,without loss of throughput, speed, or restriction on random accessaddressing.

In one aspect, the present disclosure teaches a memory bank that iscoupled to an e1 register. The e1 register is coupled to the e2register. The e1 register stores data words that are to be verified orre-written to the memory bank. The e1 register also stores an associatedaddress for data words within the memory bank. Data words in the e1register may be verified against data words in the memory bank at theassociated address within the memory bank. If a system write operationfails on the memory bank, a re-write operation may be tried by writing adata word from the e1 register to the memory bank. The fact that thesystem write operation failed may be determined through a verifyoperation. Re-write operation from e1 register to memory bank may betried as many times as necessary to successfully complete writeoperation or may not be tried at all. In one example, the number ofre-write operations may be configurable based on control bit(s)associated with re-write attempts. In one aspect, the number of re-writeoperations may be configurable on a per-bank basis or per-segment ofbank basis. These control bits may be stored in the e1 register andassociated with a particular data word and communicated and updated asappropriate.

In one aspect, the re-write operation may be tried only when memory bankis idle (that is there are no write or read operations for that memorybank). In this way, re-write operations may be transparent to and withno delay of incoming system read and system write operations. After thedesired number of re-write attempts (0 to n) from the e1 register, thememory device moves (relocates) data word from the e1 register to the e2register. The memory device may also move associated address withinmemory bank for data word from the e1 register to the e2 register. Inone aspect, the memory device does not comprise an e2 register. Instead,after a desired number of re-write attempts, the memory device relocatesthe data word and associated address from the e1 register to a securearea in memory reserved for storing data words associated with pendingre-write and verify operations in the e1 register.

In one embodiment, a re-write operation may occur only once from the e1register to the memory bank. The memory device then relocates the dataword and associated address from the e1 register to the e2 register ifthe re-write operation failed. Alternatively, if there is no e2register, the memory device then relocates the data word and associatedaddress from the e1 register to the secure storage area in memory.Although explained with reference to one memory bank and two dynamicredundancy registers, one or more memory banks and two or more dynamicredundancy registers may also be used. Alternatively, in certainembodiments only one dynamic redundancy register may be used, e.g.,embodiments without an e2 register.

Typically, the first level dynamic redundancy register (e1 register) mayoperate at clock cycle speed of memory bank (some operations may operateat clock cycle speed of memory bank while other operations may occurindependent or multiples of memory bank clock cycle speed). The e1register may be either non-volatile or volatile, and may typicallycomprise SRAM. The e1 register may also comprise a content addressablememory (CAM) array which allows reduced size of e1 register. In oneembodiment, e1 register may be high-speed, smaller register than a lastlevel register.

Typically, the last level dynamic redundancy register (e2 register) mayoperate at clock cycle speed of main memory bank (some operations mayoperate at clock cycle speed of memory bank while other operations mayoccur independent or multiples of memory bank clock cycle speed). Thelast level may be either non-volatile or volatile, and may typicallycomprise MRAM. The e2 register may also comprise a CAM. The last leveldynamic register may beneficially comprise non-volatile memory whichallows data to be backed up on power down. The e2 register typicallyprioritizes reliability over size as compared to memory bank. In oneembodiment, the last level register may comprise more entries than thee1 register. In one embodiment, e2 register entries may be invalidatedwhen a write operation occurs for a data word having associated addresscommon with data word in e2 register. Alternatively, in an embodimentwithout an e2 register, entries in the secure memory storage area may beinvalidated when a write operation occurs for a data word having anassociated address common with data word in the secure memory storage.

In one aspect, the e1 register stores a data word and an associatedaddress for data words in a pipeline structure that have not had anopportunity to verify. For example, a data word may not have anopportunity to verify because of row address change. That is, a writeoperation may occur on a different row address than a verify operation.Thus, the data word for a verify operation would be stored within e1register and verify would be performed, if possible, on another dataword from e1 register having common row address with the data word forwrite operation. This feature is especially beneficial in pseudo-dualport memory banks. A dual port memory bank allows read and writeoperations to be performed simultaneously. A pseudo-dual port allowsread and write operations to be simultaneously (e.g., substantiallywithin the same memory device clock cycle) performed on less than allports. In one example, a pseudo-dual port MRAM may allow verify andwrite operations to be simultaneously performed as long as theoperations share a common row address and different column addresses. Inone aspect, a data word may be read from the e1 register rather thanmain memory bank if the data word failed to write or verify to memorybank.

In another aspect, the e1 or e2 register data word, associated address,and control bits can be deleted, overwritten, invalidated such that thedata is not used, or otherwise considered garbage when another writeoperation for the same associated address occurs on the memory bank. Inone aspect, a data word may be read from the e2 register rather than themain memory bank if such read operation is beneficial. For example, ife1 register relocated a data word to e2 register. In another aspect,data stored in the e2 SRAM and CAM is backed up onto the e2 non-volatileRAM for storage during power down. In another embodiment, data stored ine2 non-volatile RAM may be transferred to e2 volatile RAM during powerup. In another aspect, the memory device may move data from the e1register to the e2 register in order to free room in the e1 register. Inanother aspect, e2 register may not store data words and associatedaddresses but instead remap data words and associated addresses receivedfrom e1 register into a different area of memory bank. In another aspecte2 register may move data words to memory bank upon power down.

Typically, e2 register should be more reliable than memory bank becausedata may not be recoverable in case of e2 register failure. Thus,schemes can be implemented to increase reliability of e2 register. Forexample, e2 register may comprise status bits that allow datamanipulation of a particular data word or other entry within e2 only ifall or a predetermined number of status bits are set to one. In anotherscheme, multiple copies of data word may be maintained in e2 registerand selected based on a voting scheme. In another scheme, a morestringent error correction code (ECC) scheme may be performed within e2register than in memory bank. In another scheme, e2 register points toparticular addresses within main memory for storing data words ratherthan storing the data word within e2 itself.

In one embodiment of the present invention, only one dynamic redundancyregister, e.g., the e1 register may be used in a memory device. In otherwords, the memory device will have no e2 register. In one embodiment,upon receiving the power down signal, the e1 register may attempt toperform all the pending operations, e.g., verify and re-write operationsassociated with the data words stored in the e1 register prior toshutting down. In other words, upon receiving the power down signal, thee1 register may attempt to perform all the pending verify operations andmove all the data words associated with pending re-write operations(e.g. operations that have failed verification) stored within it to theappropriate corresponding locations in the memory bank. In oneembodiment, if the verify operations and re-write operations succeed,the corresponding entries for the data words in the e1 register may bedeleted prior to shutting down (if the e1 register comprisesnon-volatile memory). Any data words in the e1 register that could notbe successfully re-written or verified prior to shutting down will bestored in a secure memory storage area. In one embodiment, the memorydevice ensures that data is written securely to the secure memorystorage area by using one or multiple schemes including voting,error-correcting code (ECC), or storing multiple copies.

In one embodiment where only the e1 register is used, upon power up ofthe memory device and receipt of power up signal, another attempt can bemade to perform all the pending re-write or verify operations using theassociated addresses for the data words. As stated above, subsequent topowering down, the secure memory storage area will comprise data words(with their associated addresses) that have not yet been verified orthat have failed verification. The verify and re-write operations can bedirectly attempted from the secure memory storage area or they can berecalled to the e1 register prior to processing the pending operationsto the pipeline. In one embodiment, if the attempt to verify or writethe data words back to memory on power up succeeds, the correspondingentries for the data words in the secure memory storage area or the e1register may be deleted. Any data words that could not be successfullyre-written or verified subsequent to powering up will be stored in thee1 register.

In one aspect, the present disclosure teaches an access method andsystem into memory banks. Pseudo-dual ports allow using the disclosedY-mux structure to simultaneously perform verify and write operations ontwo data words sharing a common row address (e.g., sharing a common wordline). In other embodiments, dual port memory bank could allowsimultaneous read and write operations. The Y-mux structure of thepresent disclosure operates using two column decoders for the columnaddress. One column decoder allows decoding for write column addresses.The other column decoder allows decoding for read and verify columnaddresses. The disclosed pseudo-dual port memory bank with Y-muxstructure requires only a single-port memory cell. As explained, a dualport memory bank may allow read and write operations to besimultaneously performed, but requires a dual port memory cell. A singleport memory cells, for example an STT MRAM memory cell, may be more areaefficient than a dual port memory cell, for example a dual port STT MRAMmemory cell. Thus, the present disclosure teaches, in one embodiment, aY-mux structure to create a pseudo dual port memory bank with singleport memory cells. Thus, e1 register operates with the disclosed pseudodual port memory bank to permit write and verify operations sharingcommon row address to occur simultaneously.

In another aspect, the memory device includes control bits and signalsthat are used for the control logic of this disclosure. The memorydevice may thus know whether data is located in a memory bank, memorypipeline, e1 register, or e2 register for read operations. In anotheraspect, data for operations may be invalidated based on control bits andsignals to maintain consistency of operations. Such control bits andsignals may include valid bit, active bank signal, fail count bits, e2entry inactive bit. A valid bit indicates that particular data within aregister is valid for data manipulation operations. An active banksignal indicates whether the memory bank for operation is active (i.e.,that a system write or system read is being performed in that bank).Fail count bits indicate the number of re-write operations have occurredfor the data word. The e2 entry inactive bit indicates that theassociated entry in e2 should not be used for data manipulationoperations.

In another aspect, the present disclosure teaches a memory device havingpipeline structure for write and verify, among other data manipulationoperations. This pipeline structure may be used to control system write,verify, and re-write operations, among other data manipulationoperations. Using the pipeline structure of the present disclosure, dataintegrity is maintained and data flow is structured. In one embodiment,a delay register implements a delay cycle allowing memory to reachstable state before performing a verify operation on a data word. Thisdelay cycle allows a write operation to be performed for a data word,followed by a delay cycle, followed by a verify operation for the dataword.

In one embodiment, a method of writing data into a memory device isdisclosed. The method comprises utilizing a pipeline to process writeoperations of a first plurality of data words addressed to a memorybank. The method further comprises writing a second plurality of datawords and associated memory addresses into a cache memory, e.g., an e1register, wherein the cache memory is associated with the memory bankand wherein further each data word of the second plurality of data wordsis either awaiting write verification associated with the memory bank oris to be re-written into the memory bank. Further, the method comprisesdetecting a power down signal and responsive to the power down signal,transferring the second plurality of data words and associated memoryaddresses from the cache memory, e.g., the e1 register, into a securememory storage area reserved in the memory bank. Finally, the methodcomprises powering down the memory device. It should be noted that inthis embodiment only one dynamic redundancy register, e.g., the e1register may be used in the memory device. In other words, the memorydevice will have no e2 register.

In one aspect of this embodiment, the memory bank comprises a pluralityof spin-transfer torque magnetic random access memory (STT-MRAM) cells.In another aspect, the method further comprises responsive to the powerdown signal, transferring any partially completed write operations ofthe pipeline to the secure memory storage area. In a different aspect,the method further comprises responsive to the power down signal, andbefore the transferring, copying any partially completed writeoperations of the pipeline to the cache memory.

In one aspect of the embodiment, the transferring comprises utilizing asecure communication process that is substantially compliant with oneof: voting; ECC encoding; use of multiple copies; comparing multiplecopies; and voting from multiple copies. In another aspect, the powerdown signal originates from a system level software stack and representsa system wide orderly power down event. In a different aspect, the powerdown sequence is initiated when an analog detector detects that theoperating power of the chip has decreased by a predetermined thresholdlevel. In one aspect, the method further comprises removing a data wordand its associated address from the cache memory responsive to anindication that the data word has been verified as properly written tothe memory bank. In another, the method further comprises receiving apower up signal and responsive to the power up signal, transferring thesecond plurality of data words and associated memory addresses from thesecure memory storage area to the cache memory and processing the secondplurality of data words from the cache memory, through the pipeline forwriting into the memory bank.

In one embodiment, a method of writing data into a memory device isdisclosed. The method comprises utilizing a pipeline to process writeoperations of a first plurality of data words addressed to a memorybank. The method further comprises writing a second plurality of datawords and associated memory addresses into a cache memory, wherein thecache memory is associated with the memory bank and wherein further eachdata word of the second plurality of data words is either awaiting writeverification associated with the memory bank or is to be re-written intothe memory bank. The method also comprises detecting a power down signaland responsive to the power down signal, and before the memory device ispowered down, processing data words of the second plurality of datawords and associated memory addresses through the pipeline to write datainto the memory bank. The method finally comprises powering down thememory device.

In one aspect, the memory bank comprises a plurality of spin-transfertorque magnetic random access memory (STT-MRAM) cells. In anotheraspect, the power down signal originates from a system level softwarestack and represents a system wide orderly power down event. In adifferent aspect, the power down sequence is initiated when an analogdetector detects that the operating power of the chip has decreased by athreshold level. In one aspect, the method further comprises removing adata word and its associated address from the cache memory responsive toan indication that the data word has been verified as properly writtento the memory bank. In yet another aspect, the method further comprisessubsequent to the processing the data words and before the power down,transferring any unprocessed data words of the second plurality of datawords from the cache memory to a secure memory storage area of thememory bank. In one aspect, the transferring comprises utilizing asecure communication process substantially compliant with one of:voting; ECC encoding; use of multiple copies; comparing multiple copies;and voting from multiple copies.

In one aspect, the method also comprises receiving a power up signal andresponsive to the power up signal, transferring any data words andassociated memory addresses from the secure memory storage area to thecache memory and processing the data words, from the cache memory,through the pipeline for writing into the memory bank.

In one embodiment, a method of writing data into a memory device isdisclosed. The method comprises utilizing a pipeline to process writeoperations of a first plurality of data words addressed to a memorybank. The method further comprises writing a second plurality of datawords and associated memory addresses into a cache memory, wherein thecache memory is associated with the memory bank and wherein further eachdata word of the second plurality of data words is either awaiting writeverification associated with the memory bank or is to be re-written intothe memory bank. The method also comprises detecting a power down signaland responsive to the power down signal, transferring the secondplurality of data words and associated memory addresses from the cachememory into a secure memory storage area in the memory bank.Additionally, the method comprises detecting a power up signal andresponsive to the power up signal, and before the memory device ispowered up, transferring the second plurality of data words andassociated memory addresses from the secure memory storage area to thecache memory. Further, the method comprises responsive to thetransferring, and before the memory device is powered up, processing thesecond plurality of data words and associated memory addresses from thecache memory to the pipeline for writing data to the memory bank duringpower up.

In one aspect, the memory bank comprises a plurality of spin-transfertorque magnetic random access memory (STT-MRAM) cells. Further, in oneaspect, the method further comprises responsive to the power downsignal, transferring any partially completed write operations of thepipeline to the secure memory storage area. In another aspect, themethod further comprises responsive to the power down signal, copyingany partially completed write operations of the pipeline to the cachememory. In one aspect, the transferring comprises utilizing a securecommunication process substantially compliant with one of: voting; ECCencoding; use of multiple copies; comparing multiple copies; and votingfrom multiple copies.

In one embodiment, the power down signal originates from a system levelsoftware stack and represents a system wide orderly power down event. Ina different aspect, the power down sequence is initiated when an analogdetector detects that the operating power of the chip has decreased by athreshold level. In another aspect, the method further comprisesremoving a data word and its associated address from the cache memoryresponsive to an indication that the data word has been verified asproperly written to the memory bank.

In one embodiment, a memory pipeline for performing a write operation ina memory device is disclosed. The memory pipeline comprises an initialpipe-stage comprising an input register operable to receive a first dataword and an associated address to be written into a memory bank. Thememory pipeline also comprises a pre-read register of the firstpipe-stage coupled to the input register and operable to receive thefirst data word and the associated address from the input register andfurther operable to pre-read a second data word stored in the memorybank at the associated address, and wherein the pre-read register isfurther operable to store mask bits associated with pre-reading thesecond data word, wherein the mask bits comprise information regarding abit-wise comparison between the first data word and the second dataword. Further, the memory pipeline comprises a write register of thesecond pipe-stage operable to receive the first data word, theassociated address and the mask bits from the pre-read register, whereinthe write register is further operable to use information from the maskbits to write the first data word into the memory bank by changing thosebits in the first data word that differ from the second data word, andwherein the second pipe-stage follows the first pipe-stage.

In one aspect the memory bank comprises memory cells that arespin-transfer torque magnetic random access memory (STT-MRAM) cells. Inanother aspect, the pre-read register further comprises ECC bits forcorrecting bit errors in data words read from the memory bank. In oneaspect, the pre-read is performed as part of a bit redundancy remappingoperation. In another aspect the pre-read register stores the mask bitsin a first level dynamic redundancy register. In a further aspect, thememory pipeline further comprises a delay register of the thirdpipe-stage operable to provide delay cycles between the write registerand a verify register, wherein the delay cycles are used to find averify operation in a first level dynamic redundancy register with a rowaddress in common with the first data word wherein the third pipe-stagefollows the second pipe-stage. In one aspect the delay register isfurther operable to receive the first data word and associated addressfrom the write register. In another aspect, the delay register isfurther operable to transmit the first data word and associated addressto the first level dynamic redundancy register responsive to receipt ofa row address change signal. In one aspect, the memory pipeline furthercomprises a verify register of the fourth pipe-stage operable to receivethe first data word and associated address from the delay register, andfurther operable to read a third data word at the associated addressfrom the memory bank, wherein the fourth pipe-stage follows the thirdpipe-stage. Further, the memory pipeline comprises compare logicoperable to compare contents of the first data word and the third dataword to determine if the first data word wrote correctly to the memorybank.

In one embodiment, a memory pipeline for performing a write operation ina memory device is disclosed. The memory pipeline comprises an initialpipe-stage comprising an input register operable to receive a first dataword and an associated address to be written into a memory bank.Further, the pipeline comprises a first write register of a firstpipe-stage coupled to the input register and operable to receive thefirst data word and the associated address from the input register in afirst clock cycle, wherein the first write register is further operableto perform a first attempt at writing the data word into the memory bankat a location corresponding to the associated address. The pipeline alsocomprises a second write register of the second pipe-stage coupled tothe first write register and operable to receive the first data word andthe associated address from the first write register in a second clockcycle, wherein the second write register is further operable to performa second attempt at writing the first data word into the memory bank atthe location corresponding to the associated address, and furtherwherein a second data word is input into the first write register in thesecond clock cycle subsequent to writing the first data word into thesecond write register from the first write register, wherein the secondpipe-stage follows the first pipe-stage.

In one aspect, the pipeline further comprises a delay register of thethird pipe-stage operable to receive the first data word and theassociated address from the second write register on a third cycle,wherein a third data word is input into the first write register and thesecond data word is transferred from the first write register into thesecond write register for a second attempt at writing the second dataword on the third cycle into the memory bank, wherein the thirdpipe-stage follows the second pipe-stage. In one aspect, the delayregister is further operable to provide a delay cycle between the writeregister and a verify register, wherein the delay cycle is used to finda verify operation in a first level dynamic redundancy register with arow address in common with the first data word. In one aspect, the delayregister is further operable to transmit the first data word and theassociated address to the first level dynamic redundancy registerresponsive to receipt of a row address change signal. In another aspect,the memory pipeline further comprises a verify register of the fourthpipe-stage coupled to the delay register wherein the verify register isoperable to receive the first data word from the delay register on afourth clock cycle, and wherein the verify register performs a readoperation on the memory bank at the associated address to determinewhether the first data word wrote correctly to the memory bank, whereinthe fourth pipe-stage follows the third pipe-stage. In yet anotheraspect, the memory pipeline also comprises compare logic operable toperform a compare operation between the first data word in the verifyregister and a data word read from the memory bank at the associatedaddress in the verify register.

In one aspect, the memory pipeline additionally comprises a verifyresults register of the fifth pipe-stage operable to receive the firstdata word and the associated address from the verify register, whereinresponsive to a determination that a verify operation associated withthe compare operation failed, the verify results register is furtheroperable to transfer the first data word and the associated address to afirst level dynamic redundancy register, wherein the fifth pipe-stagefollows the fourth pipe-stage. In one aspect, the memory cells of thememory bank comprise spin-transfer torque magnetic random access memory(STT-MRAM) cells. In another aspect responsive to receiving a readoperation, write operations associated with the memory pipeline arestalled until the read operation is completed.

In one embodiment of the present invention, a memory device for storingdata is disclosed. The memory device comprises a memory bank comprisinga plurality of addressable memory cells configured in a plurality ofsegments wherein each segment contains N rows per segment, wherein thememory bank comprises a total of B entries, and wherein the memory cellsare characterized by having a prescribed write error rate, E. The memorydevice also comprises a pipeline comprising M pipestages and configuredto process write operations of a first plurality of data words addressedto a given segment of the memory bank. Further, the memory comprises acache memory, e.g., the e1 register comprising Y number of entries, thecache memory associated with the given segment of the memory bankwherein the cache memory is operable for storing a second plurality ofdata words and associated memory addresses, and wherein further eachdata word of the second plurality of data words is either awaiting writeverification associated with the given segment of the memory bank or isto be re-written into the given segment of the memory bank, and whereinthe Y number of entries is based on the M, the N and the prescribed worderror rate, E, to prevent overflow of the cache memory.

In one aspect, the Y number of entries is at least (N*M)+(B*E) entries.In one aspect, the memory cells of the memory bank comprisespin-transfer torque magnetic random access memory (STT-MRAM) cells. Inone aspect, the memory device further comprises a plurality of pipelinesand a plurality of cache memories, and wherein further each segment ofthe plurality of segments has associated therewith a respective pipelineof the plurality of pipelines and a respective cache memory of theplurality of cache memories. In one aspect, the cache memory comprisesone or more status indicators for indicating a partial occupancy levelof the cache memory. In one aspect, the pipeline supports multiple writeattempts for a given write operation. In another aspect, the pipelinesupports a pre-read operation for a given write operation. In oneaspect, the pipeline is operable to flush a currently processing firstmemory operation to the cache memory if a second memory operation entersthe pipeline has a different row address as the first memory operation.

In one embodiment, a memory device for storing data is disclosed. Thememory device comprises a plurality of memory banks, wherein each memorybank comprises a plurality of addressable memory cells and a pluralityof pipelines each comprising a plurality of pipe-stages, wherein eachpipeline is associated with a respective one of the plurality of memorybanks, and wherein each pipeline is configured to process writeoperations of a first plurality of data words addressed to itsassociated memory bank. The memory device further comprises a pluralityof cache memories, wherein each cache memory is associated with arespective one of the plurality of memory banks and a respective one ofthe plurality of pipelines, and wherein each cache memory is operablefor storing a second plurality of data words and associated memoryaddresses, and wherein further each data word of the second plurality ofdata words is either awaiting write verification associated with thegiven segment of an associated memory bank or is to be re-written intothe given segment of the associated memory bank.

In one aspect, the addressable memory cells of the associated memorybank comprise spin-transfer torque magnetic random access memory(STT-MRAM) cells. In one aspect, each pipeline is operable to flush acurrently processing first memory operation to an associated cachememory if a second memory operation that enters the pipeline has adifferent row address as the first memory operation. In another aspect,each cache memory comprises one or more status indicators for indicatinga partial occupancy level of the cache memory. In one aspect, eachpipeline supports multiple write attempts for a given write operation.In another aspect, each pipeline supports a pre-read operation for agiven write operation.

In one embodiment, a memory device for storing data is disclosed. Thememory device comprises a memory bank comprising a memory array ofaddressable memory cells and a pipeline configured to process read andwrite operations addressed to the memory bank. Further, the memorycomprises an x decoder circuit coupled to the memory array for decodingan x portion of a memory address for the memory array and a ymultiplexer circuit coupled to the memory array and operable tosimultaneously multiplex across the memory array based on two y portionsof memory addresses and, based thereon with the x portion, forsimultaneously writing a value and reading a value associated with twoseparate memory cells of the memory array, wherein the x decoder and they multiplexer comprise a read port and a write port which are operableto simultaneously operate with respect to the memory array.

In one aspect, the x decoder is operable to assert a row line of thememory array and wherein the two separate memory cells share the rowline in common. In another aspect, the read port and the write portallow a write operation and a read-verify operation, that share a commonrow, to simultaneously access the memory array. In one aspect, the readport and the write port allow a write operation and a read-verifyoperation, that share a common row and that have different y portions,to simultaneously access the memory array. In another aspect, theaddressable memory cells comprise spin-transfer torque magnetic randomaccess memory (STT-MRAM) cells. In one aspect of the invention, the xportion of the memory address decodes to a common row line shared by thetwo separate memory cells of the memory array and wherein further thetwo y portions of memory addresses respectively select first and secondsets of bit lines associated with the two separate memory cells of thememory array. In one aspect, the memory device further comprises aplurality of input/output channels, the plurality of input/outputchannels coupled to the y multiplexer circuit.

In one embodiment, a method of writing data into a memory device isdisclosed. The method comprises utilizing a pipeline to process writeoperations of a first plurality of data words addressed to a memorybank. The method further comprises writing a second plurality of datawords and associated memory addresses into an error buffer, wherein thesecond plurality of data words are a subset of the first plurality ofdata words, wherein the error buffer is associated with the memory bankand wherein further each data word of the second plurality of data wordsis either awaiting write verification associated with the memory bank oris to be re-written into the memory bank. Further, the method comprisesmonitoring an occupancy level of the error buffer and determining if theoccupancy level of the error buffer is larger than a predeterminedthreshold. Responsive to a determination that the occupancy level of theerror buffer is larger than the predetermined threshold, the methodcomprises increasing a write voltage of the memory bank, whereinsubsequent write operations are performed at a higher write voltage.

In another embodiment, a memory device for storing data is disclosed.The memory device comprises a memory bank comprising a plurality ofaddressable memory cells and a pipeline configured to process writeoperations of a first plurality of data words addressed to the memorybank. The method also comprises a cache memory operable for storing asecond plurality of data words and associated memory addresses, whereinthe cache memory is associated with the memory bank and wherein furthereach data word of the second plurality of data words is either awaitingwrite verification associated with the memory bank or is to bere-written into the memory bank. Further, the method comprises a logicmodule operable to: (a) monitor an occupancy level of the error buffer;(b) determine if the occupancy level of the error buffer exceeds apredetermined threshold; and (c) responsive to a determination that theoccupancy level of the error buffer exceeds the predetermined threshold,increase a write voltage of the memory bank, wherein subsequent writeoperations are performed at a higher write voltage.

In a different embodiment, a method of writing data into a memory deviceis disclosed. The method comprises utilizing a pipeline to process writeoperations of a first plurality of data words addressed to a memory bankand writing a second plurality of data words and associated memoryaddresses into an error buffer wherein the error buffer is associatedwith the memory bank and wherein further each data word of the secondplurality of data words is either awaiting write verification associatedwith the memory bank or is to be re-written into the memory bank.Further, the method comprises monitoring an occupancy level of the errorbuffer and determining if the occupancy level of the error buffer hasincreased beyond a predetermined threshold. Responsive to adetermination that the occupancy level of the error buffer has increasedbeyond the predetermined threshold, the method comprises increasing alength of a pulse width for write cycles of the memory bank, whereinsubsequent write operations are performed using the pulse width.

In one embodiment, a method of writing data into a memory device isdisclosed. The method comprises utilizing a pipeline to process writeoperations of a first plurality of data words addressed to a memorybank. The method also comprises writing a second plurality of data wordsand associated memory addresses into an error buffer, wherein the secondplurality of data words are a subset of the first plurality of datawords, wherein the error buffer is associated with the memory bank andwherein further each data word of the second plurality of data words iseither awaiting write verification associated with the memory bank or isto be re-written into the memory bank. Further, the method comprisesmonitoring a first counter value which tracks a number of write 1 errorsand a second counter value which tracks a number of write 0 errors. Themethod also comprises determining if the first counter value hasexceeded a predetermined threshold and determining if the second countervalue has exceeded the predetermined threshold. Responsive to adetermination that the first counter value has exceeded thepredetermined threshold, the method comprises increasing a write 1voltage of the memory bank, wherein subsequent write 1 operations areperformed at a higher write 1 voltage and, further, responsive to adetermination that the second counter value has exceeded thepredetermined threshold increasing a write 0 voltage of the memory bank,wherein subsequent write 0 operations are performed at a higher write 0voltage.

In another embodiment, a method of writing data into a memory device isdisclosed. The method comprises utilizing a pipeline to process writeoperations of a first plurality of data words addressed to a memorybank, wherein the processing of write operations comprises writing ‘1’sto the memory bank using a write 1 voltage and writing ‘0’s to thememory bank using a write 0 voltage. The method further compriseswriting a second plurality of data words and associated memory addressesinto an error buffer, wherein the second plurality of data words are asubset of the first plurality of data words, wherein the error buffer isassociated with the memory bank and wherein further each data word ofthe second plurality of data words is either awaiting write verificationassociated with the memory bank or is to be re-written into the memorybank. Further, the method comprises monitoring a first counter valuethat tracks a number of write 1 errors and a second counter value thattracks a number of write 0 errors. Subsequently, the method comprisesdetermining if the first counter value has exceeded a firstpredetermined threshold and determining if the second counter value hasexceeded a second predetermined threshold. Responsive to a determinationthat the first counter value has exceeded the first predeterminedthreshold, the method comprises increasing the write 1 voltage of thememory bank, wherein subsequent write 1 operations are performed at ahigher write 1 voltage and, further, responsive to a determination thatthe second counter value has exceeded the second predetermined thresholdincreasing the write 0 voltage of the memory bank, wherein subsequentwrite 0 operations are performed at a higher write 0 voltage.

In a different embodiment, a memory device for storing data isdisclosed. The memory device comprises a memory bank comprising aplurality of addressable memory cells and a pipeline configured toprocess write operations of a first plurality of data words addressed tothe memory bank. The method further comprises a cache memory operablefor storing a second plurality of data words and associated memoryaddresses, wherein the second plurality of data words is a subset of thefirst plurality of data words, wherein the cache memory is associatedwith the memory bank and wherein further each data word of the secondplurality of data words is either awaiting write verification associatedwith the memory bank or is to be re-written into the memory bank. Thememory device also comprises a logic module operable to: a) monitor afirst counter value that tracks a number of write 1 errors and a secondcounter value that tracks a number of write 0 errors; b) determine ifthe first counter value has exceeded a first predetermined threshold; c)determine if the second counter value has exceeded a secondpredetermined threshold; and d) responsive to a determination that thefirst counter value has exceeded a first predetermined thresholdincrease a write 1 voltage of the memory bank, wherein subsequent write1 operations are performed at a higher write 1 voltage and, further,responsive to a determination that the second counter value has exceededa second predetermined threshold increase a write 0 voltage of thememory bank, wherein subsequent write 0 operations are performed at ahigher write 0 voltage.

In one embodiment, a method of writing data into a memory device isdisclosed. The method comprises utilizing a pipeline to process writeoperations of a first plurality of data words addressed to a memorybank. The method also comprises writing a second plurality of data wordsand associated memory addresses into an error buffer, wherein the secondplurality of data words are a subset of the first plurality of datawords, wherein the error buffer is associated with the memory bank andwherein further the second plurality of data words comprises data wordsthat are awaiting write verification associated with the memory bank.Further, the method comprises searching for at least one data word thatis awaiting write verification in the error buffer, wherein verifyoperations associated with the at least one data word are operable to beperformed in a same cycle as a write operation, and wherein the verifyoperations associated with the at least one data word occur in a samerow as the write operation. The method also comprises determining if anaddress associated with any of the at least one data word is proximal toan address for the write operation and preventing a verify operationassociated with the at least one data word from occurring in a samecycle as the write operation if a corresponding address for the verifyoperation is proximal to the write operation.

In another embodiment, a method of writing data into a memory device isdisclosed. The method comprises utilizing a pipeline to process writeoperations of a first plurality of data words addressed to a memory bankand writing a second plurality of data words and associated memoryaddresses into an error buffer, wherein the second plurality of datawords are a subset of the first plurality of data words, wherein theerror buffer is associated with the memory bank and wherein further thesecond plurality of data words comprises data words that are awaitingwrite verification associated with the memory bank. Further, the methodcomprises searching for two data words that are awaiting writeverification in the error buffer, wherein verify operations associatedwith the two data words are operable to be performed in a same cycle asa write operation, and wherein the verify operations associated with thetwo data words occur in a same row as the write operation. The methodalso comprises determining if an address associated with any of the twodata words is adjacent to an address for the write operation andde-prioritizing a verify operation associated with any of the two datawords if a corresponding address for the verify operation is adjacent tothe write operation, wherein the verify operation is scheduled to occurin a different cycle than the write operation.

In one embodiment, a memory device for storing data is disclosed. Thememory device comprises a memory bank comprising a plurality ofaddressable memory cells and a pipeline configured to process writeoperations of a first plurality of data words addressed to the memorybank. The memory device also comprises a cache memory operable forstoring a second plurality of data words and associated memoryaddresses, wherein the cache memory is associated with the memory bankand wherein further the second plurality of data words comprises datawords that are awaiting write verification associated with the memorybank. Further, the memory device comprises a logic module operable to:a) search for three data words that are awaiting write verification inthe error buffer, wherein verify operations associated with the threedata words are operable to be performed in a same cycle as a writeoperation, and wherein the verify operations associated with the threedata words occur in a same row as the write operation; b) determining ifan address associated with any of the three data words is adjacent to anaddress for the write operation; and c) de-prioritizing a verifyoperation associated with any of the three data words if a correspondingaddress for the verify operation is adjacent to an address of the writeoperation.

In one embodiment, a method of writing data into a memory device isdisclosed. The method comprises utilizing a pipeline to process writeoperations of a first plurality of data words addressed to a memory bankand writing a second plurality of data words and associated memoryaddresses into an error buffer, wherein the second plurality of datawords are a subset of the first plurality of data words, wherein theerror buffer is associated with the memory bank and wherein further thesecond plurality of data words comprises data words that are awaitingwrite verification associated with the memory bank. Further, the methodcomprises searching for a data word that is awaiting write verificationin the error buffer, wherein a verify operation associated with the dataword is operable to be performed in a same cycle as a write operation,and wherein the verify operation associated with the data word occurs ina same row as the write operation. The method also comprises determiningif an address of the data word is proximal to an address for the writeoperation. Finally, responsive to a determination that the address ofthe data word is proximal to the address for the write operation, themethod comprises delaying a start of the verify operation, wherein arising edge of the verify operation occurs a predetermined delay after arising edge of the write operation.

In another embodiment, a method of writing data into a memory device isdisclosed. The method comprises utilizing a pipeline to process writeoperations of a first plurality of data words addressed to a memory bankand writing a second plurality of data words and associated memoryaddresses into an buffer, wherein the second plurality of data words area subset of the first plurality of data words, wherein the buffer isassociated with the memory bank and wherein further the second pluralityof data words comprises data words associated with pending verifyoperations in connection with the memory bank. Further, the methodcomprises searching for a pending verify operation in the buffer,wherein the pending verify operation is operable to be performed in abackground operation and operable to be performed in a same cycle as awrite operation, and wherein a data word associated with the verifyoperation occurs in a same row as the write operation. Subsequently, themethod comprises determining if an address of the data word is adjacentto an address for the write operation. Responsive to a determinationthat the address of the data word is adjacent to the address for thewrite operation, the method comprises delaying a start of the verifyoperation, wherein a rising edge of the verify operation occurs apredetermined delay after a rising edge of the write operation, andwherein the verify operation and the write operation occur in a sameclock cycle.

In another embodiment, a memory device for storing data is disclosed.The memory device comprises a memory bank comprising a plurality ofaddressable memory cells and a pipeline configured to process writeoperations of a first plurality of data words addressed to the memorybank. The memory device further comprises a cache memory operable forstoring a second plurality of data words and associated memoryaddresses, wherein the cache memory is associated with the memory bankand wherein further the second plurality of data words comprises datawords that are awaiting write verification associated with the memorybank. Further, the memory device comprises a logic module operable to:a) search for a data word that is awaiting write verification in thecache memory, wherein a verify operation associated with the data wordis operable to be performed in a same cycle as a write operation, andwherein the verify operation associated with the data word occurs in asame row as the write operation; b) determine if an address of the dataword is proximal to an address for the write operation; and c)responsive to a determination that the address of the data word isproximal to the address for the write operation, delay a start of theverify operation, wherein a rising edge of the verify operation occurs apredetermined delay after a rising edge of the write operation.

In one embodiment, a memory device for storing data is disclosed. Thememory device comprises a memory bank comprising a plurality ofaddressable memory cells, wherein the memory bank is divided into aplurality of segments and a pipeline configured to process writeoperations of a first plurality of data words addressed to the memorybank. The memory device also comprises a cache memory operable forstoring a second plurality of data words and associated memoryaddresses, wherein the second plurality of data words are a subset ofthe first plurality of data words, wherein the cache memory isassociated with the memory bank and wherein further each data word ofthe second plurality of data words is either awaiting write verificationassociated with the memory bank or is to be re-written into the memorybank, wherein the cache memory is divided into a plurality of segments,wherein each segment of the cache memory is direct mapped to acorresponding segment of the memory bank, wherein an address of each ofthe second plurality of data words is mapped to a corresponding segmentin the cache memory, and wherein data words from a particular segment ofthe memory bank only get stored in a corresponding direct mapped segmentof the cache memory.

In another embodiment, a memory device for storing data is disclosed.The memory device comprises a plurality of memory banks, each comprisinga plurality of addressable memory cells, wherein each of the pluralityof memory banks is divided into a plurality of segments and a pipelineconfigured to process write operations of a first plurality of datawords addressed to the plurality of memory banks. The memory device alsocomprises a cache memory operable for storing a second plurality of datawords and associated memory addresses, wherein the second plurality ofdata words are a subset of the first plurality of data words, whereinthe cache memory is associated with the plurality of memory banks andwherein further each data word of the second plurality of data words iseither awaiting write verification associated with a bank from theplurality of memory banks or is to be re-written into a bank from theplurality of memory banks, wherein the cache memory is divided into aplurality of segments, wherein each segment of the cache memory isdirect mapped to a corresponding segment of a memory bank of theplurality of memory banks, and wherein an address of each of the secondplurality of data words is mapped to a corresponding segment in thecache memory.

In a different embodiment, a memory device is disclosed. The memorydevice comprises a memory bank comprising a plurality of magnetic randomaccess memory (MRAM) cells, wherein each memory cell is configured tostore a data word at a respective one of a plurality of memoryaddresses, and wherein the memory bank is divided into a plurality ofsegments. The memory device also comprises a dynamic redundancy registercomprising data storage elements, wherein the dynamic redundancyregister is divided into a plurality of segments, wherein each segmentof the dynamic redundancy register is direct mapped to a correspondingsegment of the memory bank. Also, the memory device comprises a pipelinebank coupled to the memory bank and the dynamic redundancy register,wherein the pipeline bank is configured to: a) write a data word into asegment of the memory bank that corresponds to a selected address of theplurality of memory addresses; b) verify the data word written into thememory bank to determine whether the data word was successfully written;and c) responsive to a determination that the data word was notsuccessfully written, writing the data word and the selected addressinto a segment of the dynamic redundancy register that directly maps tothe segment of the memory bank associated with the write, wherein datawords from a particular segment of the memory bank only get stored in acorresponding direct mapped segment of the dynamic redundancy register.

In one embodiment, a memory device for storing data is disclosed. Thememory device comprises a memory bank comprising a plurality ofaddressable memory cells, wherein the memory bank is divided into aplurality of segments. Further, the memory device comprises a pipelineconfigured to process write operations of a first plurality of datawords addressed to the memory bank. The memory device also comprises acache memory operable for storing a second plurality of data words andassociated memory addresses, wherein the second plurality of data wordsare a subset of the first plurality of data words, wherein the cachememory is associated with the memory bank and wherein further each dataword of the second plurality of data words is either awaiting writeverification associated with the memory bank or is to be re-written intothe memory bank, wherein the cache memory is divided into a plurality ofprimary segments, wherein each primary segment of the cache memory isdirect mapped to a corresponding segment of the plurality of segments ofthe memory bank, wherein each primary segment of the plurality ofprimary segments of the cache memory is sub-divided into a plurality ofsecondary segments, and each of the plurality of secondary segmentscomprises at least one counter for tracking a number of valid entriesstored therein, and wherein a secondary segment for storing a data wordfrom the second plurality of data words is selected based on a selectioncriterion.

In another embodiment, a memory device for storing data is disclosed.The memory device comprises a plurality of memory banks, each comprisinga plurality of addressable memory cells, wherein each of the pluralityof memory banks is divided into a plurality of segments and a pipelineconfigured to process write operations of a first plurality of datawords addressed to the plurality of memory banks. The memory devicefurther comprises a cache memory operable for storing a second pluralityof data words and associated memory addresses, wherein the secondplurality of data words are a subset of the first plurality of datawords, wherein the cache memory is associated with the plurality ofmemory banks and wherein further each data word of the second pluralityof data words is either awaiting write verification associated with abank from the plurality of memory banks or is to be re-written into abank from the plurality of memory banks, wherein the cache memory isdivided into a plurality of primary segments, wherein each primarysegment of the cache memory is direct mapped to a corresponding segmentof the plurality of segments of the plurality of memory banks, whereineach primary segment of the plurality of primary segments of the cachememory is sub-divided into a plurality of secondary segments, whereineach of the plurality of secondary segments comprises at least onecounter for tracking a number of valid entries stored therein, andwherein a secondary segment from the plurality of secondary segments isselected for performing an access operation based on a selectioncriterion.

In a different embodiment, a memory device comprises a memory bankcomprising a plurality of magnetic random access memory (MRAM) cells,wherein each memory cell is configured to store a data word at arespective one of a plurality of memory addresses, and wherein thememory bank is divided into a plurality of segments. The memory devicealso comprises a dynamic redundancy register comprising data storageelements, wherein the dynamic redundancy register is divided into aplurality of primary segments, wherein each primary segment of thedynamic redundancy register is direct mapped to a corresponding segmentof the plurality of segments of the memory bank, wherein each primarysegment of the plurality of primary segments of the dynamic redundancyregister is sub-divided into a plurality of secondary segments, andwherein each of the plurality of secondary segments comprises at leastone counter for tracking a number of entries in a respective secondarysegment. Further, the memory device comprises a pipeline bank coupled tothe memory bank and the dynamic redundancy register, wherein thepipeline bank is configured to: a) write a data word into a segment ofthe memory bank that corresponds to a selected address of the pluralityof memory addresses; b) verify the data word written into the memorybank to determine whether the data word was successfully written; and c)responsive to a determination that the data word was not successfullywritten, writing the data word and the selected address into a selectedsecondary segment of a selected primary segment of the dynamicredundancy register, wherein the selected primary segment directly mapsto the segment of the memory bank associated with the selected addressof the data word, and wherein the selected secondary segment is selectedbased on a selection criteria.

In one embodiment, a memory device comprises a memory bank comprising aplurality of addressable memory cells, wherein the memory bank isdivided into a plurality of segments, and a pipeline configured toprocess write operations of a first plurality of data words addressed tothe memory bank. The memory device also comprises a cache memoryoperable for storing a second plurality of data words and associatedmemory addresses, wherein the second plurality of data words are asubset of the first plurality of data words, wherein the cache memory isassociated with the memory bank and wherein further each data word ofthe second plurality of data words is either awaiting write verificationassociated with the memory bank or is to be re-written into the memorybank, wherein the cache memory is divided into a plurality of primarysegments, wherein each primary segment of the cache memory is directmapped to a corresponding segment of the plurality of segments of thememory bank, wherein each primary segment of the plurality of primarysegments of the cache memory is sub-divided into a plurality ofsecondary segments, and wherein each of the plurality of secondarysegments comprises at least one counter for tracking a number of entriesstored therein. Further, the memory device comprises a logic moduleoperable to: a) determine a first primary segment of the plurality ofprimary segments of the cache memory for performing an access operation;and b) select a first secondary segment from the plurality of secondarysegments within the first primary segment for performing the accessoperation, wherein the first secondary segment is selected based on avalue of a counter of the selected secondary segment.

In another embodiment, a memory device comprises a plurality of memorybanks comprising a plurality of addressable memory cells, wherein eachof the plurality of memory banks is divided into a plurality ofsegments, and a pipeline configured to process write operations of afirst plurality of data words addressed to the plurality of memorybanks. The memory device further comprises a cache memory operable forstoring a second plurality of data words and associated memoryaddresses, wherein the second plurality of data words are a subset ofthe first plurality of data words, wherein the cache memory isassociated with the plurality of memory banks and wherein further eachdata word of the second plurality of data words is either awaiting writeverification associated with a memory bank from the plurality of memorybanks or is to be re-written into a memory bank from the plurality ofmemory banks, wherein the cache memory is divided into a plurality ofprimary segments, wherein each primary segment of the cache memory isdirect mapped to a corresponding segment of the plurality of segments ofthe memory bank, wherein each primary segment of the plurality ofprimary segments of the cache memory is sub-divided into a plurality ofsecondary segments, and wherein each of the plurality of secondarysegments comprises at least one counter for tracking a number of entriesin stored therein. Finally, the memory device comprises a logic moduleoperable to: a) determine a first primary segment of the plurality ofprimary segments of the cache memory for performing an access operation;and b) select a first secondary segment from the plurality of secondarysegments within the first primary segment for performing the accessoperation, wherein the first secondary segment is selected based on avalue of a counter of the selected secondary segment.

In a different embodiment, a memory device comprises a memory bankcomprising a plurality of addressable memory cells, wherein the memorybank is divided into a plurality of segments, and a pipeline configuredto process write operations of a first plurality of data words addressedto the memory bank. The memory device also comprises a cache memoryoperable for storing a second plurality of data words and associatedmemory addresses, wherein the second plurality of data words are asubset of the first plurality of data words, wherein the cache memory isassociated with the memory bank and wherein further each data word ofthe second plurality of data words is either awaiting write verificationassociated with the memory bank or is to be re-written into the memorybank, wherein the cache memory is divided into a plurality of primarysegments, wherein each primary segment of the cache memory is directmapped to a corresponding segment of the plurality of segments of thememory bank, wherein each primary segment of the plurality of primarysegments of the cache memory is sub-divided into a plurality ofsecondary segments, and wherein each of the plurality of secondarysegments comprises at least one counter for tracking a number of entriesstored therein. Finally, the memory device comprises a logic moduleoperable to: a) determine a first primary segment of the plurality ofprimary segments of the cache memory for performing an access operation;and b) select a first secondary segment from the plurality of secondarysegments within the first primary segment for performing the accessoperation based on an address space that the first secondary segmentmaps to in the memory bank.

In one embodiment, a method of writing data into a memory device isdisclosed. The method comprises utilizing a pipeline to process writeoperations of a first plurality of data words addressed to a pluralityof memory banks, wherein each of the plurality of memory banks isassociated with a counter. The method also comprises writing a secondplurality of data words and associated memory addresses into an errorbuffer, wherein the second plurality of data words are a subset of thefirst plurality of data words, wherein the error buffer is associatedwith the plurality of memory banks and wherein further each data word ofthe second plurality of data words is either awaiting write verificationassociated with a bank from the plurality of memory banks or is to bere-written into a bank from the plurality of memory banks. Finally themethod comprises maintaining a count in each of the plurality ofcounters for a respective number of entries in the error buffercorresponding to a respective memory bank.

In one embodiment, a memory device for storing data is disclosed. Thememory device comprises a first and a second memory bank, eachcomprising a plurality of addressable memory cells, and a pipelineconfigured to process write operations of a first plurality of datawords addressed to the first and second memory bank. The memory devicealso comprises a cache memory operable for storing a second plurality ofdata words and associated memory addresses, wherein the second pluralityof data words are a subset of the first plurality of data words, whereinthe cache memory is associated with the first and the second memory bankand wherein further each data word of the second plurality of data wordsis either awaiting write verification or is to be re-written into eitherthe first or the second memory bank. Further, the memory devicecomprises a first counter associated with the first memory bank, whereinthe first counter maintains a count for a number of entries in the cachememory corresponding to the first memory bank and a second counterassociated with the second memory bank, wherein the second countermaintains a count for a number of entries in the cache memorycorresponding to the second memory bank. The memory device alsocomprises a logic module operable to: a) determine if the pipeline is ina no-op cycle; b) responsive to a determination of the no-op cycle,determine which of the first counter or the second counter has a highervalue; c) responsive to a determination that the first counter has ahigher value, select a first memory bank as an inactive memory bank; andd) responsive to a determination that the second counter has a highervalue, select a second memory bank as an inactive memory bank.

In a different embodiment, a memory device for storing data comprises afirst and a second memory bank, each comprising a plurality ofaddressable memory cells, wherein the first and the second memory banksis each divided into a plurality of segments, and a pipeline configuredto process write operations of a first plurality of data words addressedto the first and second memory bank and the process no-op cycles. Thememory device also comprises a cache memory operable for storing asecond plurality of data words and associated memory addresses, whereinthe second plurality of data words are a subset of the first pluralityof data words, wherein the cache memory is associated with the first andthe second memory bank and wherein further each data word of the secondplurality of data words is either awaiting write verification or is tobe re-written into either the first or the second memory bank, whereinthe cache memory is divided into a plurality of primary segments,wherein each primary segment of the cache memory is direct mapped to acorresponding segment of the plurality of segments of the first and thesecond memory banks, wherein each primary segment of the plurality ofprimary segments of the cache memory is sub-divided into a plurality ofsecondary segments, and wherein each of the plurality of secondarysegments comprises a counter for keeping track of a number of entries ina respective secondary segment. Further, the memory device comprises alogic module operable to: a) determine if the pipeline is processing ano-op cycle; b) responsive to a determination of the no-op cycle,determine a sum of counter values of a respective plurality of secondarysegments for each primary segment of the cache memory; c) selecting afirst memory bank as the inactive memory bank if a highest summedcounter value is associated with a primary segment that is associatedwith the first memory bank; and d) selecting a second memory bank as theinactive memory bank if a highest summed counter value is associatedwith a primary segment that is associated with the second memory bank.

These and other objects, features, aspects, and advantages of theembodiments will become better understood with reference to thefollowing description and accompanying drawings. Moreover, the object,features, aspect, and advantages of the embodiments can be modified andcombined without departing from the teachings of the present disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included as part of the presentspecification, illustrate the presently preferred embodiments and,together with the general description given above and the detaileddescription given below, serve to explain and teach the principles ofthe MTJ devices described herein.

FIG. 1 is a block diagram of exemplary memory device of the presentdisclosure having redundancy registers.

FIG. 2 is an exemplary embodiment for a process flow showing a writeoperation using exemplary memory device of the present disclosure andillustrates the high-level write operation performed on a memory device.

FIG. 3 is a block diagram of exemplary embodiment of a memory device ofthe present disclosure having dynamic redundancy registers.

FIG. 4 is a block diagram of exemplary embodiment of a memory device ofthe present disclosure showing Y-mux structure.

FIG. 5 is a block diagram of exemplary embodiment of a memory device ofthe present disclosure showing pipeline structure that allowsverification and re-write operations.

FIG. 6 is an exemplary process flow showing an embodiment of a systemread operation using an embodiment of memory device of the presentdisclosure.

FIG. 7 is a block diagram of an embodiment of a memory device showing afirst level dynamic redundancy register.

FIG. 8 is a block diagram of an embodiment of a memory device of thepresent disclosure showing a last level dynamic redundancy register.

FIG. 9 is a block diagram of exemplary memory device of the presentdisclosure having a single redundancy register.

FIG. 10 depicts an exemplary embodiment for a process flow showing theprocessing of pending memory related operations in a dynamic redundancyregister on power down in an exemplary memory device of the presentdisclosure.

FIG. 11 depicts an exemplary embodiment for a process flow showing theprocessing of pending memory related operations in a secure memorystorage area on power up using a dynamic redundancy register in anexemplary memory device of the present disclosure.

FIG. 12 depicts an exemplary embodiment for a process flow showing theprocessing of performing a blind save of the contents of a dynamicredundancy register on power down in an exemplary memory device of thepresent disclosure.

FIG. 13 depicts an exemplary embodiment for a process flow showing theprocessing of performing a blind recall of the contents of the memorybank into a dynamic redundancy register on power up in an exemplarymemory device of the present disclosure.

FIG. 14 is a block diagram of exemplary embodiment of a memory device ofthe present disclosure showing pipeline structure that allows pipestagesfor performing a pre-read operation for a write operation.

FIG. 15 is a block diagram of exemplary embodiment of a memory device ofthe present disclosure showing pipeline structure that allows anadditional cycle for write operation for storing a data word.

FIG. 16 is a block diagram of an exemplary pipeline structure for amemory device that comprises an additional write stage in accordancewith an embodiment of the present invention.

FIG. 17 illustrates the manner in which a memory bank can be segmentedin accordance with an embodiment of the present invention.

FIG. 18 is a block diagram of exemplary embodiment of a memory device ofthe present disclosure showing the operation of a row and column decoderin conjunction with a Y-mux structure in accordance with an embodimentof the present invention.

FIG. 19 depicts an exemplary embodiment for a process flow showing themanner in which a pre-read register is used to perform a write operationin an exemplary memory device of the present disclosure.

FIG. 20 is a block diagram of an exemplary pipeline structure for amemory device that comprises a pre-read pipe-stage for a write operationin accordance with an embodiment of the present invention.

FIG. 21 illustrates a smart design for a dynamic redundancy register inaccordance with an embodiment of the present invention.

FIG. 22 is a block diagram of an exemplary embodiment of a memory devicethat optimizes write voltage based on error buffer occupancy inaccordance with an embodiment of the present invention.

FIG. 23 depicts an exemplary embodiment for a process flow showing themanner in which the write voltage for a memory bank is optimized basedon error buffer occupancy levels in accordance with an embodiment of thepresent invention.

FIG. 24 depicts an exemplary embodiment for a process flow showing themanner in which the pulse width for write cycles of a memory bank isoptimized based on error buffer occupancy levels in accordance with anembodiment of the present invention.

FIG. 25 illustrates the manner in which stacking dies by usingthrough-silicon vias can be used to increase memory density and optimizethe use of the MRAM engine in accordance with an embodiment of thepresent invention.

FIG. 26 is a block diagram of an exemplary embodiment of a memory devicethat optimizes write voltage for bit-line and source-line independentlybased on the number of errors resulting from write ‘1’s and write ‘0’sin accordance with an embodiment of the present invention.

FIGS. 27A and 27B illustrate the manner in which either a “0” or a “1”can be stored in an MRAM cell.

FIGS. 28A and 28B illustrate exemplary circuitry that may be used toimplement write operations.

FIG. 29 depicts an exemplary embodiment for a process flow showing themanner in which the write ‘1’ and write ‘0’ voltage for a memory bank isoptimized based on counter values in accordance with an embodiment ofthe present invention.

FIG. 30 depicts an exemplary embodiment for a process flow showing themanner in which the write ‘1’ and write ‘0’ pulse widths for writecycles for a memory bank is optimized based on counter values inaccordance with an embodiment of the present invention.

FIG. 31 illustrates the manner in which noise from bit-line coupling mayimpact a verify (or read) operation if it on the same word line or rowas an adjacent write operation.

FIG. 32 is a block diagram of an exemplary embodiment of a memory deviceof the present disclosure showing the manner in which a verify operationadjacent to a simultaneously occurring write operation on the same rowcan be filtered out in accordance with an embodiment of the presentinvention.

FIG. 33 depicts an exemplary embodiment for a process flow showing themanner in which a background verify or read can be performed in the samecycle as a write operation without distortion created by bit-linecoupling effects in accordance with an embodiment of the presentinvention.

FIG. 34 illustrates an alternative method to addressing the problem ofbit-line coupling in accordance with an embodiment of the presentinvention.

FIG. 35 depicts an exemplary embodiment for a process flow showing themanner in which a background verify or read can be delayed by athreshold amount from a write operation on the same row to preventdistortion created by bit-line coupling effects in accordance with anembodiment of the present invention.

FIG. 36A illustrates the manner in which an error cache (e.g., acontent-addressable memory or CAM) is divided into direct-mappedsegments to mitigate high power in accordance with an embodiment of thepresent invention.

FIG. 36B illustrates the manner in which an error cache is divided intodirect-mapped segments using a mapping module in accordance with anembodiment of the present invention.

FIG. 37A depicts an exemplary embodiment for a process flow showing themanner in which a write operation is performed for a memory bank thatcomprises addresses that are mapped to corresponding segments in anerror buffer in accordance with an embodiment of the present invention.

FIG. 37B depicts an exemplary embodiment for a process flow showing themanner in which a read operation is performed for a memory bank thatcomprises addresses that are mapped to corresponding segments in anerror buffer in accordance with an embodiment of the present invention.

FIG. 38 illustrates a mapping scheme with coarse and fine segments thatachieves reduced power of smaller segmentation size without increasedrisk of segment overflow in accordance with an embodiment of the presentinvention.

FIG. 39 illustrates the manner in which sub-segments may be chosen forentry-in and entry-out operations based on counter values in accordancewith an embodiment of the present invention.

FIG. 40 depicts an exemplary embodiment for a process flow showing themanner in which power consumption can be optimized for an error cache inaccordance with an embodiment of the present invention.

FIGS. 41A to 41C illustrate the different states in which two memorybanks in a memory design can operate in accordance with an embodiment ofthe present invention.

FIG. 42 illustrates the manner in which counters associated with eachmemory bank can be used to determine which memory bank to designate asthe inactive bank during a no-op cycle in accordance with an embodimentof the present invention.

FIG. 43 depicts an exemplary embodiment for a process flow showing themanner in which an inactive memory bank is chosen for a no-op cycle in amemory with two or more memory banks in accordance with an embodiment ofthe present invention.

The figures are not necessarily drawn to scale and the elements ofsimilar structures or functions are generally represented by likereference numerals for illustrative purposes throughout the figures. Thefigures are only intended to facilitate the description of the variousembodiments described herein; the figures do not describe every aspectof the teachings disclosed herein and do not limit the scope of theclaims.

DETAILED DESCRIPTION

The following description is presented to enable any person skilled inthe art to create and use dynamic redundancy registers that allowdevices, and especially magnetic semiconductor device such as an MRAM,to operate with high write error rate (WER). Each of the features andteachings disclosed herein can be utilized separately or in conjunctionwith other features to implement the disclosed system and method.Representative examples utilizing many of these additional features andteachings, both separately and in combination, are described in furtherdetail with reference to the attached drawings. This detaileddescription is merely intended to teach a person of skill in the artfurther details for practicing preferred aspects of the presentteachings and is not intended to limit the scope of the claims.Therefore, combinations of features disclosed in the following detaileddescription may not be necessary to practice the teachings in thebroadest sense, and are instead taught merely to describe particularlyrepresentative examples of the present teachings.

In the following description, for purposes of explanation only, specificnomenclature is set forth to provide a thorough understanding of thepresent teachings. However, it will be apparent to one skilled in theart that these specific details are not required to practice the presentteachings.

FIG. 1 is a block diagram of exemplary memory device of the presentdisclosure having dynamic redundancy registers (e1 register 104 and e2register 106, in this case). FIG. 1 shows memory devices 100 describedherein that includes memory bank 102, e1 register 104, and e2 register106. Moreover, memory device 100 communicates with data signals, forexample, address signal 108, data word signal 110, clock signal 112,write and chip select signals 114, power down signal 116, power upsignal 118. Note that FIG. 1 illustrates certain teachings of thepresent disclosure. However, it should be understood that the specificsignals 108-118 illustrated may be modified by those with ordinary skillin the art without departing from the teachings of the presentdisclosure. Moreover, other communication interfaces, for example adouble data rate (DDR) interface, to the memory device may be used.Although shown with only two dynamic redundancy registers here (e1register 104 and e2 register 106) and one memory bank (memory bank 102),memory device 100 may comprise two or more dynamic redundancy registersand one or more memory banks. The two or more dynamic redundancyregisters could be implemented using some combination e1 register 104and e2 register 106. The two or more dynamic redundancy registers mayalso operate hierarchically or in parallel.

Memory bank 102 comprises an array of data storage elements comprisingdata bits and may be implemented by volatile or non-volatile RAMtechnologies such as static random-access memory (SRAM), dynamicrandom-access memory (DRAM), resistive random-access memory (RRAM),phase-change memory (PCM), MRAM, STT-MRAM, or other RAM technologies. Inan exemplary embodiment, memory bank 102 may include an error correctingcode block (not pictured). The teachings of the present disclosure areespecially beneficial when memory bank 102 comprises STT-MRAM whichsuffers from an inherently stochastic write mechanism, wherein bits havecertain probability of write failure on any given write cycle. Theteachings of the present disclosure allow memory bank 102 to be operatedwith high WER. However, many such errors can be corrected using theteachings of the present disclosure. Operating with high WER may allowmemory bank 102 to operate under other beneficial conditions. Forexample, memory bank 102 could operate under high write speed, low writevoltage (which may enable higher bitcell endurance), reducing ECC bits,or increased ECC decode speed, among other beneficial conditions.

In one embodiment, memory bank 102 may comprise 65,536×50 addressablebits. Further, the 50 bits comprise a 32-bit data word and 18 paritybits for error correction. Operations may be performed on memory bank102 including system read, system write, re-write and verify operations,among other data manipulations. A particular operation, for example awrite operation, may occur at a particular address within memory bank102. The operation may have a row address, indicating a word line, and acolumn address. The address for write operations may be communicatedthrough a write port of memory bank 102. The address for read or verifyoperations may be communicated through a read port of memory bank 102.

In one embodiment, memory bank 102 comprises a pseudo-dual port memorybank allowing memory device 100 to simultaneously (e.g., substantiallywithin a memory device clock cycle) perform a write operation and averify operation sharing a common row (word line) address. System readoperations to memory bank 102 generally supersede write and verifyoperations. Thus, system read operation would be performed before thescheduled write and verify operations. Write and verify operation couldthen happen on a subsequent clock cycle.

It should be noted that if a dual-port memory bank 102 is used, read andwrite operations may be simultaneously performed. In other words, adual-port memory bank would also permit two write operations (or tworead operations) to be performed simultaneously. By contrast, apseudo-dual port memory bank can comprise two ports, however, both portsmay not be designed to service the same operations. For example,typically a write operation requires a write driver with correspondingsense amplifiers that can support the higher current requirements of awrite operation. In other words, a write driver tends to occupy moresurface area on the chip as compared to a read driver because of thehigh current requirements for a write operation. A dual port memory bankoptimizes both ports to support write operations, which, in turn, meansthat both ports can also support read operations because therequirements for read drivers are less stringent than for write drivers.A pseudo dual port memory bank, on the other hand, optimizes one of theports to support a write operation and one of the ports to support aread operation. In the current case, because memory device 100 will bereceiving a write and a verify operation sharing a common row (wordline) address in the same clock cycle, a pseudo-dual port memory bankcan be used to process the write and verify operation simultaneously.

The e1 register 104 is coupled to memory bank 102 and e2 register 106.The e1 register 104 comprises an array of data storage elementscomprising data bits and may be implemented by volatile and non-volatileRAM technologies. The e1 register 104 may also comprise control bits andcommunicate using control signals that maintain consistency ofoperations within memory device 100. Typically, data is more reliablywritten to e1 register 104 than within memory bank 102. Thus, if memorybank 102 comprises STT-MRAM, then e1 register 104 might comprise SRAM.In other embodiments, e1 register may comprise non-volatile RAM such asSTT-RAM. The e1 register may also comprise a dual-port STT-RAM to allowsimultaneous read and write operations. In this case, e1 register 104can run at the same cycle throughput speed as a memory bank. The e1register 104 may also comprise content addressable memory (CAM). In oneembodiment, the e1 register may be located off the memory chip and on asystem card or even on the CPU. In other words, the e1 register can belocated on a different chip besides the memory chip.

Generally, e1 register 104 stores data words and associated addressesfor data in memory bank 102 that has not been verified or has failedverification. In one embodiment, e1 register 104 may store data wordsthat have not been verified. For example, e1 register 104 receives aRowChange signal that indicates row address change within a pipelinestructure of the present disclosure. The RowChange signal indicates thatthe data word and the associated address from the pipeline structureshould be stored within e1 register 104. The RowChange signal may alsoindicate that that another data word and associated address should betransmitted from e1 register 104 to the pipeline structure for a verifyoperation. If a pseudo-dual port memory bank is used, e1 register 104may choose a data word and an associated address such that they share acommon row address with a data word in the write register of thepipeline structure. In this way, a write operation and a verifyoperation can be simultaneously performed since the data words share acommon row address.

In another embodiment, e1 register 104 may store data words that havefailed verification. For example, the pipeline structure may transmit asignal to e1 register 104 indicating that a data word has failed towrite (i.e., failed verification) to memory bank 102. The pipelinestructure may also transmit data word and associated address (in thecase that e1 register 104 does not already contain the data word andassociated address) to e1 register 104 in order to later try to re-writethe data word to memory bank 102. In another example, a read operationmay occur and pipeline structure may determine that the read operationdid not occur within a predetermined error budget. The pipelinestructure may then transmit a signal indicating that the read operationfailed and transmit the data word and associated address to e1 register104 for storage.

From the preceding, one of ordinary skill in the art will understandthat e1 register 104 may store data words and associated addresses forfuture verification. For example, a data word may not have had anopportunity to verify due to a row address change. Thus, e1 register 104may transmit the data word and associated address to the pipelinestructure of the present disclosure during some subsequent clock cycleto verify the data word. Typically, a control signal may indicate to e1register 104 that a row address change will occur or that memory bank102 will become inactive during subsequent clock cycles. The e1 register104 may then determine the appropriate data word sharing a common rowaddress with the data word to be written (in case of row address change)during the subsequent clock cycle. The e1 register 104 then transmitsthe data word and associated address to verify register of the pipelinestructure. In one embodiment, e1 register 104 may also transmit thephysical address within e1 register 104 if the data word is alreadystored within e1 register 104. In this way, control bits associated withthe data word may be updated.

From the preceding, a person skilled in the art will understand that e1register 104 may also store data words for future re-write attempts. Thee1 register 104 may receive data words that have failed verificationfrom the pipeline structure of the present disclosure. Memory device 100may have attempted a write operation and the data word failed a verifyoperation. Memory device 100 may also have attempted a read operationand the data word may have failed to read within a specified errorbudget. In both cases, the pipeline structure of the present disclosuremay transmit the data word to e1 register 104. Memory bank 102 maybecome inactive during a subsequent cycle. The e1 register 104 may thendetermine an appropriate data word to attempt to re-write to memory bank102. In this case, e1 register 104 may transmit a data word andassociated address to the pipeline structure. The e1 register 104transmits the data word such that a write register could re-write thedata word during the clock cycle that memory bank 102 would otherwise beinactive.

Generally, e1 register 102 may also relocate data words, associatedaddresses, and control bits to e2 register 106. If no more re-writeattempts are desired, e1 register 104 may relocate data word andassociated address to e2 register 106. The e1 register may also relocatedata to memory bank 102 or e2 register 106 on power down so that data isstored in non-volatile memory in the case that e1 register 104 comprisesvolatile memory. The e1 register 104 may also relocate data to e2register 106 in the case that e1 register 104 lacks space for datawords.

The e1 register comprises control bits and communicates using controlsignals. In one embodiment, e1 register comprises valid bits indicatingwhether the associated data word is a valid entry within e1 register. Inanother embodiment, e1 register comprises fail count bits indicating thenumber of re-write attempts associated with a data word. In this way,memory device 100 may try only a specified number of re-write attempts.In another embodiment, e1 register comprises bits indicating that theassociated data word has not been verified due to row address change andshould be verified.

The e2 register 106 is coupled to e1 register 104 and may also becoupled to memory bank 102. The e2 register 106 comprises an array ofdata storage elements comprising data bits and may be implemented byvolatile and non-volatile RAM technologies. The e2 register 106 may alsocomprise an ECC block and CAM. The e2 register 106 may comprise datawords, associated addresses, and control bits. Typically, e2 register106 will comprise a non-volatile memory technology, for exampleSTT-MRAM. In one embodiment, the e2 register may be located off thememory chip and on a system card or even on the CPU. In other words, thee2 register can be located on a different chip besides the memory chip.

The e2 register 106 stores data words and associated addresses relocatedfrom e1 register 104. In another embodiment, rather than storing datawords and associated data words from e1 register 104, e2 register 106remaps those data words to addresses within memory bank 102. Forexample, e2 register 106 may store remap addresses in memory bank 102.The e2 register 106 then temporarily stores a data word from e1 registerand then writes it to an appropriate remap address in memory bank 102.When a data word should be read, e2 register contains the appropriateremap address for reading the data word from memory bank 102.

Data words and associated addresses may be relocated to e2 register 106or remapped based on different conditions. In one embodiment, e1register 104 relocates data words and associated addresses to e2register 106 because the data words failed to write to memory bank 102after the specified number of re-write attempts.

In another embodiment, e1 register 104 relocates data words andassociated addresses to e2 register 106 because power down signal 116indicates that data word and associated address should be moved tonon-volatile memory, such as e2 register 106 comprising STT-MRAM. In oneembodiment, e1 register 104 may attempt to process any pending verifiesor re-write attempts associated with data words stored in e1 prior torelocating the contents of the e1 register to the e2 register uponreceipt of the power down signal. In other words, when a power downsignal is received, but before the chip powers down, the e1 registercan, in one embodiment, attempt to process all the entries within the e1register prior to storing the entries in the e2 register. For example,the e1 register may attempt sending data words associated with anypending re-write operations or verify operations to the pipelinestructure to process them prior to moving them to the e2 register. Anyoperations that are successfully processed may then be deleted,overwritten or invalidated from the e1 register and would not need to bestored in the e2 register. Any operations that are not successfullyprocessed on power down, will be stored in the e2 register.

In another embodiment, e1 register 104 relocates data words andassociated addresses to e2 register 106 because e1 register 104 lacksspace. One of ordinary skill in the art will understand that desiredcontrol bits may also be relocated with associated data word. In anotherembodiment, if data word fails to write to a physical address within e2register 106 after a predetermined number of write attempts a differentphysical address may be chosen for data word.

The e2 register 106 may also be coupled to an input register of apipeline structure. In this way, e2 register 106 may receive controlsignals indicating that a write operation for a data word sharing acommon associated address with a data word within e2 register 106 may beoccurring. Thus, control bits within e2 register 106 may indicate that adata word within e2 register 106 is invalid because of a system writeoperation.

Memory device 100 also communicates using exemplary signals 108-118.Address signal 108 comprises address within memory bank 102 of data tobe written to or read from (or otherwise manipulated). Data word signal110 comprises a data word to be written to (or otherwise manipulated)memory bank 102. Clock signal 112 comprises a memory device 100 clocksignal or other clock signal (such as for specific components withinmemory device 100). Write and chip select signals 114 comprise signalsused to determine the operation to be performed within memory bank 102.For example, if write signal is high and chip select signal is low aread operation might be performed on memory bank 102.

Power down signal 116 indicates whether power will be removed frommemory device 100 or specific components within memory device 100. Thus,power down signal 116 may be used to determine that contents of e1register 104 should be written to memory or e2 register 106. Asmentioned above, the e1 register 104 may attempt to process any pendingverifies or re-write attempts associated with data words stored in e1prior to relocating the contents of the e1 register to the e2 registerupon receipt of the power down signal but before the device powers down.

Power up signal 118 indicates that power is provided to memory device100. Power up signal may indicate that e2 non-volatile memory contentsshould be loaded to e2 volatile memory. One of ordinary skill in the artwill recognize that the specific signals 108-118 may be modified withoutdeparting from the present disclosure. In one embodiment, upon receiptof the power up signal and before loading the memory contents to e2volatile memory, another attempt is made to process any pending verifiesor re-write attempts associated with data words stored in the e2register. If the e2 register is connected to the pipeline structure, theattempts to process the data words in the e2 register may occur directlyfrom the e2 register. In a different embodiment, the e2 register mayneed to move its contents to the e1 register prior to attempting theverify and re-write operations through the pipeline.

Power down signal 116 may indicate that e2 register 106 volatile memorycontents should be moved to e2 register 106 non-volatile memory. Forexample, e2 register 106 volatile memory contents not already stored ine2 non-volatile memory may be moved to e2 register 106 non-volatilememory. Again, in one embodiment, if the e2 register is connected to thepipeline structure, upon receipt of the power down signal, the e2register may attempt to process any pending verify or re-writeoperations prior to moving the contents into non-volatile memory.

In another embodiment, power down signal 116 may indicate that e2register 106 contents should be moved to non-volatile memory bank 102.

In another embodiment, power down signal 116 may indicate that certaindata words within e1 register 104 should be verified to memory bank 102.In another embodiment, power down signal 116 indicates that certain datawords within e1 register 104 should be re-written to memory bank 102. Ifthe verify or re-write operations are unsuccessful, as mentioned above,the data words associated with those operations would then be moved tothe e2 register upon power down.

FIG. 9 is a block diagram of exemplary memory device of the presentdisclosure having a single dynamic redundancy register (e1 register 904in this case). FIG. 9 shows memory devices 900 described herein thatincludes memory bank 902 and e1 register 904. As compared to theembodiment shown in FIG. 1, the embodiment of FIG. 9 does not comprisean e2 register. Instead memory bank 902 comprises a secure memorystorage area 932 that may be reserved for the e1 register to relocatedata words, associated addresses, and control bits. In one embodiment,the reserved secured memory storage area 932 performs substantially thesame function as the e2 register described in FIG. 1. However, insteadof dedicating a separate dedicated register, the e1 register is able torelocate its contents to a secured location in memory as will be furtherdescribed below.

Additionally, memory device 900 communicates with data signals, forexample, address signal 908, data word signal 910, clock signal 912,write and chip select signals 914, power down signal 916, and power upsignal 918. Note that FIG. 9 illustrates certain teachings of thepresent disclosure. However, it should be understood that the specificsignals 908-918 illustrated may be modified by those with ordinary skillin the art without departing from the teachings of the presentdisclosure. Moreover, other communication interfaces, for example adouble data rate (DDR) interface, to the memory device may be used.Although shown with only one memory bank (memory bank 102), memorydevice 900 may comprise one or more memory banks. Note further thatwhile write and chip select signals have been lumped into one signal 914in FIG. 9, write, chip select and read may all comprise separate signalsto memory device 900.

Memory bank 902 comprises an array of data storage elements comprisingdata bits and may be implemented by volatile or non-volatile RAMtechnologies such as static random-access memory (SRAM), dynamicrandom-access memory (DRAM), resistive random-access memory (RRAM),phase-change memory (PCM), MRAM, STT-MRAM, or other RAM technologies. Inan exemplary embodiment, memory bank 902 may include an error correctingcode block (not pictured). As noted above, the teachings of the presentdisclosure are especially beneficial when memory bank 902 comprisesSTT-MRAM which suffers from an inherently stochastic write mechanism,wherein bits have certain probability of write failure on any givenwrite cycle. The teachings of the present disclosure allow memory bank902 to be operated with high WER. However, many such errors can becorrected using the teachings of the present disclosure. Operating withhigh WER may allow memory bank 902 to operate under other beneficialconditions. For example, memory bank 902 could operate under high writespeed, low write voltage (which may enable higher bitcell endurance),reducing ECC bits, or increased ECC decode speed, among other beneficialconditions.

In one embodiment, memory bank 902 may comprise 65,536×50 addressablebits for instance. Further, the 50 bits comprise a 32-bit data word and18 parity bits for error correction. Operations may be performed onmemory bank 902 including system read, system write, re-write and verifyoperations, among other data manipulations. A particular operation, forexample a write operation, may occur at a particular address withinmemory bank 902. The operation may have a row address, indicating a wordline, and a column address. The address for write operations may becommunicated through a write port of memory bank 902. The address forread or verify operations may be communicated through a read port ofmemory bank 902.

In one embodiment, memory bank 902 comprises a pseudo-dual port memorybank allowing memory device 900 to simultaneously (e.g., substantiallywithin a memory device clock cycle) perform a write operation and averify operation sharing a common row (word line) address. System readoperations to memory bank 902 generally supersede write and verifyoperations. Thus, system read operation would be performed before thescheduled write and verify operations. Write and verify operation couldthen happen on a subsequent clock cycle. As explained above, apseudo-dual port memory bank can used to implement the write and verifyoperation on the same clock cycle.

The e1 register 904 is coupled to memory bank 902. The e1 register 904comprises an array of data storage elements comprising data bits and maybe implemented by volatile and non-volatile RAM technologies. The e1register 904 may also comprise control bits and communicate usingcontrol signals that maintain consistency of operations within memorydevice 900. Typically, data is more reliably written to e1 register 904than within memory bank 902. Thus, if memory bank 902 comprisesSTT-MRAM, then e1 register 904 might comprise SRAM. In otherembodiments, e1 register may comprise non-volatile RAM such as STT-RAM.The e1 register may also comprise a dual-port STT-RAM to allowsimultaneous read and write operations. In this case, e1 register 904can run at the same cycle throughput speed as a memory bank. The e1register 904 may also comprise content addressable memory (CAM).

Generally, e1 register 904 stores data words and associated addressesfor data in memory bank 902 that have not been verified or have failedverification. In one embodiment, e1 register 904 may store data wordsthat have not been verified. For example, e1 register 904 receives aRowChange signal that indicates row address change within a pipelinestructure of the present disclosure. The RowChange signal indicates thatthe data word and the associated address from the pipeline structureshould be stored within e1 register 904. The RowChange signal may alsoindicate that that another data word and associated address should betransmitted from e1 register 904 to the pipeline structure for a verifyoperation. If a pseudo-dual port memory bank is used, e1 register 904may choose a data word and an associated address such that they share acommon row address with a data word in the write register of thepipeline structure. In this way, a write operation and a verifyoperation can be simultaneously performed since the data words share acommon row address.

In another embodiment, e1 register 904 may store data words that havefailed verification. For example, the pipeline structure may transmit asignal to e1 register 904 indicating that a data word has failed towrite (e.g., failed verification) to memory bank 902. The pipelinestructure may also transmit data word and associated address (in thecase that e1 register 904 does not already contain the data word andassociated address) to e1 register 904 in order to later try to re-writethe data word to memory bank 902. In another example, a read operationmay occur and pipeline structure may determine that the read operationdid not occur within a predetermined error budget. The pipelinestructure may then transmit a signal indicating that the read operationfailed to occur within the error budget and transmit the data word andassociated address to e1 register 904 for storage.

From the preceding, one of ordinary skill in the art will understandthat e1 register 904 may store data words and associated addresses forfuture verification. For example, a data word may not have had anopportunity to verify due to a row address change. Thus, e1 register 904may transmit the data word and associated address to the pipelinestructure of the present disclosure during some subsequent clock cycleto verify the data word. Typically, a control signal may indicate to e1register 904 that a row address change will occur or that memory bank902 will become inactive during subsequent clock cycles. The e1 register904 may then determine the appropriate data word sharing a common rowaddress with the data word to be written (in case of row address change)during the subsequent clock cycle. The e1 register 904 then transmitsthe data word and associated address to verify register of the pipelinestructure. In one embodiment, e1 register 904 may also transmit thephysical address within e1 register 904 if the data word is alreadystored within e1 register 904. In this way, control bits associated withthe data word may be updated.

From the preceding, a person skilled in the art will understand that e1register 904 may also store data words for future re-write attempts. Thee1 register 904 may receive data words that have failed verificationfrom the pipeline structure of the present disclosure. Memory device 900may have attempted a write operation and the data word failed a verifyoperation. Memory device 900 may also have attempted a read operationand the data word may have failed to read within a specified errorbudget. In both cases, the pipeline structure of the present disclosuremay transmit the data word to e1 register 904. Memory bank 902 maybecome inactive during a subsequent cycle. The e1 register 904 may thendetermine an appropriate data word to attempt to re-write to memory bank902. In this case, e1 register 904 may transmit a data word andassociated address to the pipeline structure. The e1 register 904transmits the data word such that a write register could re-write thedata word during the clock cycle that memory bank 902 would otherwise beinactive.

In the embodiment of FIG. 9, the e1 register 902 may relocate datawords, associated addresses, and control bits to secure memory storage932 in memory bank 902. If no more re-write attempts are desired, e1register 904 may relocate data word and associated address to securememory storage 332. The e1 register may also relocate data to securememory storage 932 on power down so that data is stored in non-volatilememory in the case that e1 register 104 comprises volatile memory. Asmentioned above, generally, e1 register 904 stores data words andassociated addresses for data in memory bank 902 that have not beenverified or have failed verification.

Processing Operations Pending in a Dynamic Redundancy Register Prior toPowering Down

In one embodiment, upon receiving the power down signal, the e1 register904 may attempt to perform all the pending operations associated withthe data words stored in the e1 register prior to the device shuttingdown. For example, the e1 register may attempt to store all the datawords to be re-written back into memory to the targeted locations in thememory bank 102 using the associated addresses for the data words (alsostored within e1). It should be noted, however, that prior to attemptingpending operations stored in the e1 register, the memory device willfirst flush out the pipeline and finish up any pending operations in thepipeline from before the power down signal was received.

Note that, in one embodiment, the power down signal originates from asystem level software stack and represents a system wide orderly powerdown event. However, in a different embodiment, the power down signalmay not be part of a system wide orderly power down event. In otherwords, an analog detector may be configured to monitor the power levelof the chip (e.g., a VCC power supply pin) and initiate a power downsequence if the power level of the chip falls below a certain thresholdlevel, e.g., falls 10% or more. Further, one or more capacitors may beconfigured to hold charge in order to sustain the power level above athreshold level, which allows the entire power down sequence to finishto completion.

In one embodiment, a status pin(s) or register may be configured thatallows the system to determine whether a power down sequence iscomplete. This status pin(s) or register may be used whether the shutdown sequence is a result of an orderly shut down process or not. Thestatus pin(s) or register may, for example, be associated with a timerthat is set to allow the system enough time to run the entire power downsequence to completion.

As mentioned above, the e1 register may comprise data words that havenot yet been verified or that have failed verification. Upon receivingthe power down signal, but before powering down, the e1 register mayattempt to perform all the pending verify operations and move all thedata words associated with pending re-write operations (e.g. operationsthat have failed verification) stored within it to the appropriatecorresponding locations in the memory bank. In this embodiment, thepower down sequence will typically take longer because it may take a fewcycles for the e1 register to attempt to perform all the pending verifyor re-write operations. In one embodiment, the power down signal 916from the user or system warns the e1 register 904 to expect a shut downsequence. Upon notification of the power down signal, the e1 registercan then attempt to perform the pending verify and re-write operations.In one embodiment, an option bit (or bits) or pin(s) (not shown) isprovided to the user to disable the processing of the contents of the e1register prior to shutting down. For example, if a user wants to avoid along power down sequence, an option may be provided to disable thisscheme. By way of further example, the option bit(s) may be used todisable the scheme during a test mode.

In one embodiment, the e1 register may simply transmit the data words tothe appropriate registers in the pipeline structure. For example, a dataword to be re-written into the memory bank may be transmitted to thewrite register in the pipeline from the e1 register. From the pipeline,the data can be directed to the targeted locations within the memorybank 902.

Another data word to be verified may be transferred to the verifyregister in the pipeline. Further details regarding the pipeline areprovided in connection with FIG. 5.

In one embodiment, if the verify operations or the attempt to re-writethe data words back to memory succeed, the corresponding entries for thedata words in the e1 register may be deleted prior to shutting down. Inother words, any data words that were successfully re-written orverified can be deleted from the e1 register prior to shutting down. Anydata words in the e1 register that could not be successfully re-writtenor verified prior to shutting down will be stored in secure memorystorage area 932. In one embodiment, where e1 comprises volatile memory,the data words that were successfully re-written or verified do not needto be pro-actively deleted, instead they will be deleted automaticallyonce the power down sequence completes.

Memory bank 902 can comprise a secure area reserved for e1 register totransfer its contents into upon shutting down. In one embodiment, thememory device 900 ensures that data is written securely to the securememory storage area 932 by using one or multiple schemes includingvoting, error-correcting code (ECC), or storing multiple copies. Forexample, in one embodiment, multiple copies of each of the data wordscan be written into secure memory storage area 932. When one of the datawords needs to be read, each of the copies of the data word are readfrom the secure memory storage area and compared to determine if thedata between all the copies is consistent. In case of inconsistency, avoting scheme is used to determine the correct data word. In otherwords, the most frequently occurring version of the data word betweenthe various copies is selected as the data word. In another embodiment,ECC is used to ensure that the data words are error corrected to ensurethat they are written accurately into the secure memory storage area932.

Processing Operations Pending in Secured Memory Location Upon PoweringUp Using a Dynamic Redundancy Register

In one embodiment, upon power up of the memory device and receipt ofpower up signal 918, but before the device enters mission mode (orstarts accepting commands), another attempt can be made to perform allthe pending re-write or verify using the associated addresses for thedata words. As mentioned previously, subsequent to powering down, thesecure memory storage area will comprise data words (with theirassociated addresses) that have not yet been verified or that havefailed verification. The pending re-write or verify operations will nowbe stored in non-volatile memory in secure memory storage area 932 wherethey were re-located to following power down. The verify and re-writeoperations can be directly attempted from the secure memory storage area932 or they can be recalled to the e1 register prior to processing thepending operations.

If the contents of secure storage area 932 are moved to the e1 registerprior to re-attempting the pending operations, subsequent to the receiptof the power up signal 918, the e1 register may attempt to perform allthe pending verify operations and move all the data words associatedwith pending re-write operations (e.g. operations that have failedverification) to the appropriate corresponding locations in the memorybank.

Alternatively, secure memory storage area 932 may be connected to thepipeline structure and the data words for the pending operations can bedirected directly from secure memory storage area 932 to the pipelinestructure. For example, a re-write operation can be sent directly fromthe secure memory storage area to a write register in the pipelinestructure. Similarly, a pending verify operation may be sent to a verifyregister in the pipeline structure directly from the secure memorystorage area. The verify and re-write operations that do not completesuccessfully can be transferred to the e1 register. In other words, theverify and re-write operations that cannot complete in the specifiedamount of time are transferred to the e1 register.

It should be noted that power up sequence in this scheme will typicallytake longer because it may take a few cycles to attempt to perform allthe pending verify or re-write operations.

In one embodiment, an option bit(s) or pin(s) (not shown) can be set todetermine whether to enable or disable this feature. Some users, forexample, may not want a long power up sequence. In such cases, an optionbit may be provided to users to disable this feature.

In one embodiment, the data words associated with pending operations maybe simply transmitted to the appropriate registers in the pipelinestructure (from either the e1 register or the secured memory storage).From the pipeline, the data can be directed to their targeted locationswithin the memory bank 902.

In one embodiment, if the attempt to verify or write the data words backto memory on power up succeeds, the corresponding entries for the datawords in the secure memory storage area 932 or the e1 register may bedeleted prior to shutting down. In other words, any data words that weresuccessfully re-written or verified can be deleted from both the securememory storage area 932 and the e1 register 904. Any data words thatcould not be successfully re-written or verified subsequent to poweringup will be stored in the e1 register.

Performing a Blind Save into a Dynamic Redundancy Register on Power Downand a Blind Recall into a Dynamic Redundancy Register on Power Up

In one embodiment, instead of attempting to process entries in the e1register on power down, the memory device blindly transfers all thecontents of the e1 register into secure memory storage area 932 on powerdown. As mentioned previously, the power down signal 916 can be used toindicate that a power down sequence is expected. In response to thepower down signal, e1 register 904 can dump the entirely of its contentsinto secure memory storage area 932. The blind save on power down willtypically require more time than a regular power down sequence, but willnot consume as many cycles as trying to execute pending operations inthe e1 register prior to shut down.

In one embodiment, the memory device 900 ensures that data is writtensecurely to the secure memory storage area 932 by using one or multipleschemes including voting, error-correcting code (ECC), or storingmultiple copies. For example, in one embodiment, multiple copies of eachof the data words can be written into secure memory storage area 932.When one of the data words needs to be read, each of the copies of thedata word are read from the secure memory storage area and compared todetermine if the data between all the copies is consistent. In case ofinconsistency, a voting scheme can be used to determine the correct dataword. In other words, the most frequently occurring version of the dataword between the various copies is selected as the data word. In anotherembodiment, ECC is used to ensure that the data words are errorcorrected to ensure that they are written accurately into the securememory storage area 932.

In one embodiment, instead of attempting to process pending verify andre-write entries from the secure memory storage area 932 on power up,the memory device blindly transfers all the contents from the securearea of the memory array into the e1 register. In other words, noattempt is made to process the operations associated with the data wordsstored in the secure memory storage area 932 on power up. The data wordsare simply saved to the e1 register.

It should be noted that the design for memory device 900 does notnecessitate attempting pending verify and re-write operations on bothshut down and power up. In other words, memory device may attempt toprocess pending re-write and verify operations only on power up, but noton power down. Alternatively, in one embodiment, memory device mayattempt pending operations only on power down, but not during the powerup sequence (e.g., not before the device enters mission mode). In adifferent embodiment, memory device may attempt pending operations bothon power down and power up. In cases where the pending verify andre-write operations are not processed, the corresponding data words areeither transferred directly from the e1 register to the secure memorystorage area 932 (on power down) or from the secure memory storage areato the e1 register (on power up).

The e1 register 904 may also relocate data to secure memory storage 932in the case that e1 register 904 lacks space for data words. The e1register comprises control bits and communicates using control signals.In one embodiment, e1 register comprises valid bits indicating whetherthe associated data word is a valid entry within e1 register. In anotherembodiment, e1 register comprises fail count bits indicating the numberof re-write attempts associated with a data word. In this way, memorydevice 900 may try only a specified number of re-write attempts. Inanother embodiment, e1 register comprises bits indicating that theassociated data word has not been verified due to row address change andshould be verified.

Memory device 900 also communicates using exemplary signals 908-918.Address signal 908 comprises address within memory bank 902 of data tobe written to or read from (or otherwise manipulated). Data word signal910 comprises a data word to be written to (or otherwise manipulated)memory bank 902. Clock signal 912 comprises a memory device 900 clocksignal or other clock signal (such as for specific components withinmemory device 900). Write and chip select signals 914 comprise signalsused to determine the operation to be performed within memory bank 902.For example, if write signal is high and chip select signal is low aread operation might be performed on memory bank 902. Note that in suchcase write and chip select signals can be separate signals.

Power down signal 916 indicates whether power will be removed frommemory device 900 or specific components within memory device 900 inaccordance with an orderly shut down. Thus, power down signal 916 may beused to determine that contents of e1 register 904 should be written tosecure memory storage area 932 as detailed above. Further, as detailedabove, in one embodiment, power down signal 916 may indicate thatcertain data words within e1 register 904 should be verified to memorybank 902. In another embodiment, power down signal 916 indicates thatcertain data words within e1 register 904 should be re-written to memorybank 902.

Power up signal 918 indicates that power is provided to memory device900. Power up signal may indicate that contents of the non-volatilesecure memory storage area 932 should be loaded to the e1 volatilememory. Further, as detailed above, in one embodiment, power up signal918 may indicate that certain data words within secure memory storage932 should be verified to memory bank 902. In another embodiment, powerup signal 918 indicates that certain data words within secure memorystorage 932 should be re-written to memory bank 902.

One of ordinary skill in the art will recognize that the specificsignals 908-918 may be modified without departing from the presentdisclosure.

FIG. 10 depicts an exemplary embodiment for a process flow 1000 showingthe processing of pending memory related operations in a dynamicredundancy register on power down in an exemplary memory device of thepresent disclosure.

At step 1002, a power down signal 916 is received. As stated above, thepower down signal originates from a system level software stack andrepresents a system wide orderly power down event. In a differentembodiment, the power down sequence is initiated when an analog detectordetects that the operating power of the chip has fallen below athreshold level as noted above. At step 1004, the memory device 900determines if an option bit or pin is set for enabling the processing ofpending operations in a dynamic redundancy register prior to shuttingdown.

If the option bit or pin is set, then at step 1006 the memory deviceprocesses data words associated with pending verify operations in the e1register 904. In other words, any verifies for which corresponding datawords and addresses are stored in the e1 register 904 are attemptedprior to powering down. Similarly, at step 1008, the memory deviceprocesses any pending re-write operations in the e1 register. Data wordscorresponding to any verifies or re-writes that are successful aredeleted from the dynamic redundancy register at step 1010. As notedabove, if the dynamic redundancy register comprises volatile memory thena pro-active deletion step is not necessary. At step 1012, the remainingdata words, if any, corresponding to operations that did not completesuccessfully are transferred to non-volatile secure memory storage area932. As noted previously, operations may not complete successfullybecause of certain specification mandated time limits on the power downsequence. At step 1018, the memory device is ready for power down and/orpowers down.

Alternatively, if at step 1004, the option bit is not set, then at step1014 all the contents of the e1 register are re-located directly to thenon-volatile secure memory storage area 932 without attempting any ofthe verify and re-write operations associated with data words stored inthe e1 register. At step 1016, the memory device powers down.

FIG. 11 depicts an exemplary embodiment for a process flow 1100 showingthe processing of pending memory related operations in a secure memorystorage area on power up using a dynamic redundancy register in anexemplary memory device of the present disclosure.

At step 1102, a power up signal 918 is received from system levelresources. At step 1104, the memory device 900 determines if an optionbit is set for enabling the processing of pending operations in a securememory storage area using a dynamic redundancy register prior topowering up.

If the option bit is set, then at step 1106 the memory device processesdata words associated with pending verify operations in the securememory storage area 932. In other words, any verifies for whichcorresponding data words and addresses are stored in the secure memoryare attempted prior to powering up. Similarly, at step 1008, the memorydevice processes any pending re-write operations in the secure memoryarea 932. As noted above, the data words and addresses associated withthe pending verify and re-write operations can be injected directly intothe pipeline structure from the secure memory storage area.Alternatively, in a different embodiment, the verify and re-writeoperations can be attempted by first transferring the corresponding datawords and addresses to a dynamic redundancy register, e.g. the e1register, then to the pipeline.

Data words corresponding to any verifies or re-writes that aresuccessful are deleted from the secure memory storage area 932 (or thee1 register if transferred there prior to attempting the operations) atstep 1110. If the verifies and re-writes are attempted directly from thesecure memory storage, then at step 1112, the remaining data wordscorresponding to operations that did not complete successfully aretransferred to the e1 register. As noted previously, operations may notcomplete successfully because of certain specification mandated timelimits on the power up sequence. At step 1112, the memory device isready to power up and/or powers up.

Alternatively, if at step 1104, the option bit is not set, then at step1114 all the contents of the secure memory storage area 932 arere-located directly to the dynamic redundancy register withoutattempting any of the verify and re-write operations associated withdata words stored in the secure memory storage. At step 1116, the memorydevice powers down.

FIG. 12 depicts an exemplary embodiment for a process flow 1200 showingthe processing of performing a blind save of the contents of a dynamicredundancy register on power down in an exemplary memory device of thepresent disclosure. Upon receipt of a power down signal 916 at step1206, all the contents of the dynamic redundancy register (e.g. the e1register) are transferred to secure storage location 932 withoutattempting to perform any of the operations associated with the datawords stored in the e1 register. At step 1206, the memory device is thenpowered off.

FIG. 13 depicts an exemplary embodiment for a process flow 1300 showingthe processing of performing a blind recall of the contents of thememory bank into a dynamic redundancy register on power up in anexemplary memory device of the present disclosure. Upon receipt of apower up signal 918 at step 1310, at step 1312, all the contents of thesecure memory storage area 932 are transferred to the dynamic redundancyregister (e.g. the e1 register) without attempting to perform any of theoperations associated with the data words stored in the secure memorystorage area. At step 1314, the memory device is then powered off.

FIG. 2 depicts an exemplary embodiment for a process flow showing awrite operation using an exemplary memory device of the presentdisclosure and illustrates the high-level write operation performed on amemory device. In step 202, a write operation to be performed on primarymemory (e.g., input register to memory bank 102) exists within a memorydevice. In step 202, the system write operation may be performed onprimary memory. In step 204, it is determined whether system writeoperation was successful. For example, a verify operation coulddetermine whether the write operation successfully occurred (forexample, whether the data word was written with an acceptable errorbudget or perfectly) within primary memory. If the write operation wassuccessful, process flow 200 proceeds to end step 210. On the otherhand, if the write operation was unsuccessful, a determination is madewhether write operation should be retried in step 206. One retry isillustrated during process flow 200 of FIG. 2, but as many tries towrite data into memory bank may be tried as desired (0 to n retries). Ifa retry should be tried, the data will be written from e1 register toprimary memory when process flow 200 returns to step 202. From thisdescription a person having ordinary skill in the art will understandthe operation of steps 202-206 and 210. However, in some instances, awrite operation from e1 register to primary memory may be unsuccessfuldespite the total desired number of retries. In that case, if adetermination is made at step 206 that no more tries should be made towrite data from e1 register to primary memory, process flow 200 willproceed to step 208. In step 208, data is written to alternate storage(e.g., from e1 register to e2 register).

FIG. 3 is a block diagram of exemplary embodiment of a memory device 300of the present disclosure having dynamic redundancy registers. FIG. 3 isa block diagram of memory device 300 described herein that includememory banks 304 and 306, pipeline banks 308 and 310, input register312, e1 register 314, and e2 register 316. Memory device 300communicates using signals 318-324. Memory device 300 includes ports326-336 for performing read, write, and verify (or other datamanipulation) operations on memory banks 304 and 306. Memory device 300is described herein to describe aspects of the present disclosure. Oneof ordinary skill would understand how to modify memory device 300without departing from the teachings of the present disclosure. Thus,for example, the specific signals 318-324 may be modified by those withordinary skill in the art without departing from the teachings of thepresent disclosure. Although shown with only two dynamic redundancyregisters here (e1 register 314 and e2 register 316) and two memorybanks (memory banks 304 and 306), memory device 300 may comprise two ormore dynamic redundancy registers and one or more memory banks. In oneembodiment, memory device may only comprise a single dynamic redundancyregister as discussed above.

Memory banks 304 and 306 have previously been described with respect toFIG. 1. Memory banks 304 and 306 also include two ports (326 and 328;332 and 334, respectively) for performing read, write, and verify (orother data manipulation) operations. Memory bank 304 could, for example,comprise data words having even addresses while memory bank 306comprises data words having odd addresses. Two ports 326 and 328 ofmemory bank 304 are coupled to bit lines of memory bank 304. Likewise,two ports 332 and 334 of memory bank 306 are coupled to bit lines ofmemory bank 306. Although shown with one read and one write port permemory bank, memory device 300 may comprise any desired number of readand write ports. For example, in one embodiment, memory device cancomprise two write ports and a single read port. In one embodiment, adual port memory bank is used. Thus, each port 326-336 could performsimultaneous read and write operations. However, one of ordinary skillin the art will understand that the discussion proceeds with pseudo-dualport memory banks 304-306 in mind to highlight specific teachings of thepresent disclosure. The Y-mux structure of the present disclosure allowspseudo-dual port memory banks 304-308 to perform simultaneous write andverify operations sharing common row address and different columnaddress. As explained above, a pseudo-dual port memory bank may have oneport optimized to perform write operations and another port optimized toperform read operations.

As shown in FIG. 3, the memory device may comprise two memory banks.Alternatively, the memory device may comprise several memory banks,e.g., 2, 4, 8, 16 etc. In one embodiment, each memory bank will beassociated its own respective pipeline. In another embodiment, eachmemory bank will be associated with a dedicated pipeline and a dedicatedevice redundancy register. In other words, the memory device willcontain an e1 register for each of the memory banks. If each memory bankhas a dedicated e1 register, the size of each of the e1 registers willlikely be smaller than an e1 register that services all memory banks.This will likely increase re-write and verify efficiency.

With respect to memory bank 304, write port 326 allows transmission ofsignals comprising write address and write data to memory bank 304 frompipeline bank 308. Port 328 allows transmission of data signalscomprising read address or verify address to memory bank 304 frompipeline bank 308. Port 330 allows transmission of data signalscomprising read data word from memory bank 304 to pipeline bank 308.

Pipeline banks 308 and 310 comprise data registers for implementing thewrite, read, and verify (and other data manipulation) operations of thepresent disclosure. Pipeline banks 308 and 310 are coupled to memorybanks 304 and 306, respectively, using pseudo-dual port structures, asexplained above, for providing simultaneous write and verify operations.Moreover, pipeline banks 308 and 310 are coupled to input register 312.As explained in connection with FIG. 5, pipeline banks 308 and 310implement a pipeline structure that allows verify and write operationsto be simultaneously performed on memory banks 304 and 306. Moreover,pipeline banks communicate with e1 register 314 to implement a pipelinestructure of the present disclosure.

Input register 312 comprises data storage elements comprising data bits.Input register comprises a data word, an associated addresses withinmemory banks, and control bits indicating a system operation such assystem read or system write. For example, input register 312 maycomprise a data word to be written to memory banks (received from datasignal 322), the address of the data (received from address signal 324),and control bits. Input register 312 may be coupled to pipeline bank 308and pipeline bank 310 to communicate a data word, its associatedaddress, and control bits. One of ordinary skill in the art willrecognize that other connections are possible and consistent with theteachings of the present disclosure and the specific connections areshown for ease of understanding. For example, input register 312 may becoupled to e1 register 314 for transferring the associated address ofdata word to e1 register 312 and control signals.

The e1 register 314 has been described in connection with FIG. 1, andwill also be further described in connection with FIG. 7. The e1register 314 is coupled to pipeline banks 308 and 310 and e2 register316. The e1 register 314 comprises data storage elements comprising databits. For example, e1 register 314 may comprise data word and associatedaddresses for data words that have failed to verify correctly withinmemory banks 304 and 306. The e1 register 314 may comprise data wordsand associated addresses for data words that have not yet been verifiedwithin memory banks 304 and 306. The e1 register 314 may also comprisedata words and associated addresses for data words that have failed toread from memory banks 304 and 306 within an associated error budget.

The e2 register 316 has been described in connection with FIG. 1, andwill also further be described in connection with FIG. 8. The e2register 316 may be coupled to e1 register 314. As noted above, the e2register 316 can, in one embodiment, be optional. The e2 register 316comprises data storage elements comprising data bits. The e2 register316 comprises data words, associated addresses, and control bits. Thesedata words have typically failed to write to memory banks 304 and 306.These words may have also been written from e1 register 314 to e2register 316 because of power down of memory device 300 or lack of spacewithin e1 register. In one embodiment, e2 register 316 may optionally becoupled to pipeline banks 308 and 310 or memory banks 304 and 306 inorder to write data words (or other signals). For example, rather thanstoring data words and associated address from e1 register 316, e2register may store remap addresses within memory banks 304 and 306 forwriting directly to memory banks through a remap process. In anotherembodiment, e2 register 316 writes data to memory banks 304 and 306during power down.

FIG. 4 is a block diagram of exemplary embodiment of a memory device ofthe present disclosure showing a Y-mux structure. The Y-mux structure ofthe present disclosure allows pseudo-dual port memory banks to performsimultaneous write and verify operations sharing common row address anddifferent column address. Accordingly, the Y-mux structure prevents thee1 register from overflowing by allowing both a write and verifyoperation to take place in the same cycle (provided they share a commonrow address). FIG. 4 shows portion of memory device 400 comprisingmemory bank 402, row decoder 404, write column decoder and y-mux 406,read column decoder and y-mux 408, and muxes 410-412.

FIG. 4 shows a Y-mux structure for decoders 406-408. As mentioned above,the Y-mux structure allows simultaneous verify and write operations fordata words sharing a common row address (word line) in the memory bankbut different column address. In one embodiment, one set of x addresses(common row address) and two sets of y addresses (one for the write andanother for the verify operation) are inputted into the Y-mux structure.The row address (x address) for both the verify and the write operationneed to be the same. Further, the addresses for verify and writeoperations need to address different columns. In other words, the verifyand write operation cannot be performed at the same column address. Inone embodiment, instead of a pseudo-dual port memory bank utilizing theY-mux structure, a dual ported memory bank can be used that allows twowrites or two reads to be performed simultaneously.

Memory bank 402 is coupled to decoders 404-408. Row decoder 404 takes asan input the row of address for data word that is to be written to orread or verified from memory bank 402. Row decoder then determinesappropriate row for the data word. In various embodiments, a data wordis a pre-defined number of bits for a piece of information handled by amemory device. For example, a data word may comprise 8, 16, 24, etc.bits. The size of a data word is dependent on the memory device and maybe varied as necessary.

Mux 410 is coupled to row decoder 404. Mux 410 takes as inputs thepipeline row address (Pipeline_A_Row) and read row address (Read_A_Row).Pipeline row address indicates the row address for data words receivedfrom the pipeline for either a write or verify operation. Typically, thepipeline row address indicates a shared row address between a data wordto be written to memory bank 402 and another data word to besimultaneously verified in memory bank 402. Read row address indicates arow address for a data word to be read from memory bank 402. Read rowaddress generally takes precedence over pipeline row address whenpseudo-dual port memory bank 402 is used. Mux 410 then outputsappropriate row address to row decoder 404. Row address decoder 404 thenactivates the appropriate row in memory bank 402. Appropriate activationschemes will be known to those with ordinary skill in the art.

Write column decoder and y-mux 406 is coupled to memory bank 402. Writecolumn decoder and y-mux 406 takes as inputs write address columnWR_A_Col and write data WR_D, such as data word. Write address columnindicates a column address for a system write or re-write operationreceived from the pipeline structure of the present disclosure. Writecolumn decoder and y-mux 406 then determines appropriate column addressfor write operation. Write column decoder and y-mux 406 then activatesthe appropriate column in memory bank 402. Appropriate activationschemes will be known to those with ordinary skill in the art.

Read column decoder and y-mux 408 is coupled to memory bank 402. Readcolumn decoder and y-mux 408 takes as its input the column addressoutput from mux 412. Read column decoder and y-mux 408 then determinesthe appropriate column for read operation. Read column decoder and y-mux408 then activates the appropriate column in memory bank 402.Appropriate activation schemes will be known to those with ordinaryskill in the art.

Mux 412 is coupled to read column decoder and y-mux 408. Mux 412 takesas inputs pipeline column address (Pipeline_A_Col) and read columnaddress (Read_A_Col). Pipeline column address indicates column addressof data word that should be verified in memory bank 402. Pipeline columnaddress is received from the pipeline structure. Read column addressindicates a column address for a data word that should be read frommemory bank 402. Typically, read column address takes precedence when apseudo-dual port memory bank 402 is used. Mux 412 outputs signalcomprising column address for read operation or verify operation to readcolumn decoder and y-mux 408. Thus, operating together, row and columndecoders 404-408 perform operation on specific addresses within memorybank 402 (for example, read, write, or verify).

One of ordinary skill in the art will understand that the Y-muxstructure of column decoders and y-mux 406-408 allows memory bank 402 tobe operated as a pseudo-dual port memory bank. A single port memory cellmay thus be used, but memory bank 402 may simultaneously perform verifyand write operations when those operations share a common row addressbut different column addresses. If a dual port memory bank 402 was used,read and write or verify and write operations could be performedsimultaneously (and not necessarily on a common row address). Further,with a dual port memory bank, two writes or two reads could be performedsimultaneously as well. As mentioned above, in one embodiment, thepseudo-dual port of the memory bank is designed so that one port isoptimized for a read operation and the other port is optimized for awrite operation. The port that is optimized for a write operation canalso perform reads because write ports typically require a strongdriver. However the read port typically cannot perform writes becausethe driver does not support write operations with higher currentrequirements.

A Memory Device with a Plurality of Memory Banks where Each Memory Bankis Associated with a Corresponding Memory Instruction Pipeline and aDynamic Redundancy Register

FIG. 17 illustrates the manner in which a memory bank can be segmentedin accordance with an embodiment of the present invention. As shown inFIG. 17, a memory bank can be split into segments, memory bank A 1702and memory bank B 1703. Instead of being driven by one set of row andcolumn decoders, the memory bank is now split into two and driven fromboth sides with two sets or row and column decoders. The row decoders1704 and 1754 perform substantially the same function as the row decoder404 in FIG. 4. Similarly, the two segments can each be driven by a Writecolumn decoder and Y-mux (e.g., 1706 and 1726) and a Read column decoderand Y-mux (e.g., 1708 and 1728). The write column decoder and Y-mux andthe Read column decoder and Y-mux structures perform substantially thesame function as the Write column decoder and Y-mux 406 and the Readcolumn decoder and Y-mux 408 shown in FIG. 4.

Each of the segments may be considered a separate memory bank. Asmentioned above, in an alternate embodiment, the memory device maycomprise several memory banks or segments, e.g., 2, 4, 8, 16 etc. In oneembodiment, each memory bank or segment will be associated its ownpipeline. In another embodiment, each memory segment will be associatedwith a dedicated pipeline and a dedicated device redundancy register. Inother words, the memory device will contain an e1 register for each ofthe memory banks or segments.

A Memory Device with a Dual Y-Multiplexer Structure for Performing TwoSimultaneous Operations on the Same Row of a Memory Bank

FIG. 18 is a block diagram of exemplary embodiment of a memory device ofthe present disclosure showing the operation of a row and column decoderin conjunction with a Y-mux structure in accordance with an embodimentof the present invention. As mentioned above, the Y-mux structure of thepresent disclosure allows pseudo-dual port memory banks to performsimultaneous write and verify operations sharing common row address anddifferent column address. FIG. 18 shows portion of memory device 1800comprising memory bank 1802, row decoder 1804, write column decoder andy-mux 1806, and read column decoder and y-mux 1808. Note that memorybank 1802, row decoder 1804, write column decoder and y-mux 1806, andread column decoder and y-mux 1808 perform substantially similarfunctions as the corresponding components in FIG. 4. Further note thatwrite column decoder and y-mux 1806, row decoder 1804 and read columndecoder and y-mux 1808 together comprise a read/write port for thepseudo dual port memory bank.

FIG. 18 shows a Y-mux structure for decoders 1806 and 1808. Memory bank1850 will typically comprise a plurality of rows and column bit-lines.The Y-mux structure allows simultaneous verify and write operations fordata words sharing a common row address (word line) in the memory bankbut different column address. For example, the row decoder 1804 mayactivate a row address 1850 (an x address). At the same time, columndecoder and Y-mux 1806 multiplexes the column bit-lines 1851 based on acolumn address (WR_A_COL) to arrive at the column lines associated withthe addressed data word in the Y-mux. In other words, the WR_A_COLsignal is used to select the appropriate column bit-lines 1851 to writethe data inputted through the WR_D signal. In the same cycle as columndecoder and Y-mux 1806 are writing a data word to the memory bank 1802,the read column decoder and Y-mux is used to perform the verifyoperation that shares the common row address (on row 1850) as the writeoperation. For example, the read address 1852 is used to select theappropriate bit-lines for the verify (or read) operation and the resultis outputted through the D-out signal. Accordingly, the column decoderand Y-mux 1806 is used to write a data word into the memory bank 1802 ata row address 1850 in the same cycle as the read column decoder andY-mux 1808 is used to verify (or read) a data word from row address1850.

FIG. 5 is a block diagram of exemplary embodiment of a memory device ofthe present disclosure showing pipeline structure that allowsverification and re-write operations. FIG. 5 shows exemplary pipeline500 for implementing the pipeline flow for system write, re-write, andverify operations, among other data manipulation operations. Pipeline500 is implemented using system operations 502, input register 504,memory pipeline 506, e1 register 508, and memory bank 510. Memorypipeline 506 comprises write register 512, delay register 514, verifyregister 516, and verify results register 518. Moreover pipeline 500comprises compare memory logic 520.

System operation 502 comprises signals for performing a desiredoperation such as system write and system read, among other datamanipulation operations. As such, system operation 502 typicallyincludes signals indicating a data word, the associated data addresswithin memory bank 510, and control signals indicating the operation tobe performed on memory bank 510 (such as write or chip select signal),among other signals for performing data manipulation operations andmaintaining appropriate states. Typically, the signals from systemoperation 502 are stored in input register 504. Other configurations forsignals from system operation 502 may be used without departing from thescope of the present disclosure. Moreover, other embodiments of pipeline500 are possible without departing from the teachings of thisdisclosure. For example, delay register 514 allows delay between writeand verify operation on a data word. STT-MRAM may require a delaybetween write operations at a particular address and verify operation atthe common address. The delay cycle allows data storage elements withinmemory bank 510 to return to a stable state before performing verifyoperation. Other RAM technologies, and in some instances STT-MRAMitself, may not require such delay and delay register 514 is notnecessary.

Input register 504 is coupled to write register 512. Input register 504comprises data storage elements comprising data bits. In certainembodiments, input register 504 can include data bits for a data word,associated address, a valid bit, and other desired control bits. Theinput register 504 comprises the initial stage of the pipeline.

In one embodiment, for example, where a pseudo-dual bank memory bank isused, the input register 504 adds a delay in the pipeline that allowsthe memory device time to search for a data word and an associatedaddress in the e1 register 508 that shares a common row address with adata word (associated with a write operation) in the input register. Forexample, a write operation may be received into the input register 504from system operations 502 along with the data word to be written andits corresponding address. The input register provides the requisitedelay to be able to search in the e1 register for a verify operationthat shares a common row address with the data word associated with thewrite operation. As discussed above, e1 register 904 can receive aRowChange signal that indicates row address change within a pipelinestructure of the present disclosure. The RowChange signal may indicatethat another data word and associated address should be transmitted frome1 register 904 to the pipeline structure for a verify operation. If apseudo-dual port memory bank is used, e1 register 904 may choose a dataword and an associated address such that they share a common row addresswith a data word to be written into the write register of the pipelinestructure. In this way, a write operation and a verify operation can besimultaneously performed since the data words share a common rowaddress. The input register 504 provides the necessary delay in thepipeline to be able to look for the matching verify operation in the e1register before the data word to be written is inserted into the writeregister 512. In other words, the delay of input register 504 allowsenough time to search for the matching verify operation in the e1register prior to inserting the data words to be written and verifiedinto the write register 512 and the verify register 516 respectively.

The valid bit indicates whether data manipulation operations such assystem write operation should be performed or the register should not beused to perform such operations. For example, valid bits based on awrite signal and chip select signal provided by system operation 502 mayindicate whether data word in input register is used for write. Inputregister 504 may also be coupled to e1 register 508, for example, totransmit associated address and control bits to e1 register 508. Thisassociated address and control bits may be used in case of row addresschange in the pipeline or to invalidate an e1 register 500 entry withthe same associated address, for example. For example, the address andcontrol bits may be used to look for a pending verify operation in thee1 register that shares a common row address with a data word to bewritten into the memory bank.

An active memory bank of an embodiment of the present disclosure denotesa memory bank in which a system write or system read is taking place.Thus, an active bank signal (or an active bank bit) prevents re-writesduring that clock cycle, and instead indicates that a system write orread will occur during that clock cycle. For example, an active banksignal indicates that write register 512 will write a data wordpreviously received from input register 504 to memory bank 510 duringthat clock cycle. Thus, e1 register knows that data word for re-writeoperation should not be transmitted to write register 512 during thatclock cycle. Input register 504 transmits data word, associated address,and desired control bits to write register 512.

The e1 register 508 has previously been described with respect to FIG. 1and will be described in conjunction with FIG. 7. The e1 register 508 iscoupled to input register 504, write register 512, delay register 514,verify register 516, and verify results register 520. The e1 register508 may supply data word, associated address of a data word withinmemory bank 510, and control signals to write register 512, and verifyregister 516. The e1 register 508 may receive a data word, itsassociated address, and control signals from delay register 514 andverify results register 518. The e1 register 508 may also transmit aphysical address within e1 register 508 in case the data word is alreadystored within e1 register 508. Although not shown, if delay register 514were not used, e1 register 508 may receive data word, associatedaddress, and control signals from write register 512. Moreover, e1register 508 may communicate with input register to receive signals suchas data word signal and control signal such as inactive bank signal.

Write register 512 is coupled to delay register 514 and memory bank 510.In other embodiments, write register 512 may be coupled to verifyregister 516. Write register 512 comprises data storage elementscomprising data bits. Typically, write register 512 comprises data bitsfor a data word, its associated address, valid bit, and other desiredcontrol bits. The valid bit is a valid register bit and may be set toone when write register 512 contents are valid such that write operationmay occur. Write register 504 receives data word, associated address,and desired control bits from input register 504 for system writeoperations. For memory bank clock cycles that write register 504 wouldnot otherwise be writing system data words to that memory bank, e1register 508 transmits data words, associated address, and desiredcontrol bits to write register 512. This allows write register 512 toattempt re-write operations when write register 512 would not otherwisebe writing system data words to memory bank 510. As previouslyexplained, when pseudo-dual port memory bank 510 is used, readoperations generally take precedence over write operations from writeregister 512. Moreover, when pseudo-dual port memory bank 510 is used,write register 512 may perform write operation simultaneously withverify operation performed by verify register 516 if the operationsshare a common row address. Write register 512 also transmits data word,associated address, and desired control bits to delay register 514 (orverify register 516 if no delay register is used).

Delay register 514 is coupled to verify register 516 and e1 register508. Delay register 514 comprises data storage elements comprising databits. Typically, delay register 514 comprises a data word, associatedaddress bits, a valid bit, and other desired control bits. Valid bitindicates if delay register 514 contents are valid. The delay registeror multiple delay register could provide more clock cycle delay betweenwrite and verify. As previously explained, the delay register 514 isoptional for RAM technologies that require delay between write andverify operations for a particular address within memory bank 510. Ifrow address change occurs within memory pipeline 504, delay register 514transmits data word, associated address, and desired control bits to e1register 508. Thus, data word may be verified on a later clock cyclewhen write register will write a data word sharing a common row address.In another embodiment, data word may be verified on a later clock cyclewhen no verify operation will otherwise occur to the memory bank. If norow address change occurs within memory pipeline 504, after desireddelay clock cycles, delay register 514 transmits the data word,associated address, and desired control bits to verify register 516.

Verify register 516 is coupled to memory bank 510 and verify resultsregister 520. Verify register 516 comprises data storage elementscomprising data bits. Typically, verify register 516 comprises a dataword, its associated address, valid bit, and other desired control bits.Verify register 156 may comprise internal e1 address if data word wasreceived as a result of re-write operation or verify operation from e1register. Valid bit indicates whether verify register 516 contents arevalid for verify operation. Verify register 516 contents, such as dataword, can be sourced from either delay register 514 (or write register512 in case delay register 512 is not used) or e1 register 508. Verifyregister 516 would receive contents from delay register 514 if no rowaddress change has occurred. Verify register 516 would receive contentsfrom e1 register 508 if row address change occurred. In one embodiment,verify register 516 receives the data word, its associated address,address within e1 register, fail count bits, and other desired controlbits from e1 register 508. Verify register 516 transmits the associatedaddress to memory bank 510 for the data word to be verified. Verifyregister 516 transmits the data word, fail count bits, and other desiredstatus bits to compare data logic 520. Verify register 516 transmits thedata word and its associated address to verify results register 518 incase of a system write. Verify register 516 transmits internal e1address in case of re-write operation or verify from e1 register 508.Thus, if the data word and the associated address already exist e1register 508, verify register 516 need not transmit the data word andthe associated address to verify results register 518.

Compare memory logic 520 is coupled to verify register 516. Comparememory logic 520 comprises data storage elements comprising data bits.Compare memory logic 520 may comprise read or sense amplifiers to read adata word from memory bank 510. Hardware logic for implementing comparememory logic 520 can be used by those with ordinary skill in the art.

In the case of verify operation, compare memory logic 520 receives inputfrom verify register 516 and memory bank 510. Memory bank 510 outputs adata word to compare memory logic 520 based on the associated addresstransmitted from verify register 516. Compare memory logic 520 alsoreceives the data word from verify register 516. Thus, compare memorylogic 520 determines whether the write operation passed or failed.Compare memory logic 520 makes the pass/fail determination based onmethods desired by those with ordinary skill in the art. In oneembodiment, compare memory logic 520 determines whether the data wordfrom verify register 516 matches the data word from memory bank 510. Inother embodiments, compare memory logic 520 deems that the operationpassed if a predetermined number of bits match. If verify operationpassed, compare memory logic 520 passes appropriate control bits toverify results register 518, for example fail count bits may be set to0. Verify results register 518 may then invalidate the entry within e1register if needed. If verify operation failed, verify results register518 updates fail count bits within e1 register (in case of re-write orverify from e1) or transmits the data word, the associated address, andcontrol bits to e1 register (in case of system write).

In the case of read operation, memory bank 510 outputs a data word, theassociated address, and desired control bits to compare memory logic520. Compare memory logic 520 determines whether the read operationpassed or whether re-write operation should be performed on memory bank510 because too many errors occurred while reading the data word. In oneembodiment, compare memory logic 520 corrects data words using ECC andparity bits associated with data words. If ECC determines that too manyerrors occurred (e.g., errors above a predetermined threshold), comparememory logic 520 also transmits the data word and control bits to verifyresults register 518.

Verify results register 518 is coupled to compare memory logic 520 ande1 register 508. Verify results register 518 comprises data storageelements comprising data bits. Typically, verify results register 518comprises data bits for a data word, associated address, valid bit, anddesired control bits. Valid bit indicates that contents of verifyresults stage register 518 are valid to be written to e1 register 508.Verify results register 518 may also comprise internal e1 address.Verify results register 518 transmits data to e1 register as previouslyexplained.

One of ordinary skill in the art will understand that pipeline structure500 is exemplary and may include more write, delay, verify, verifyresults registers, and compare logic blocks to allow more re-writeattempts before writing failed data words to e1 register. Moreover, moreregisters and memory banks may be added without departing from the scopeof the present disclosure.

Increased Pipeline Depth to Support Pre-Read Operations in a MemoryDevice

FIG. 14 is a block diagram of exemplary embodiment of a memory device ofthe present disclosure showing pipeline structure that allows pipestagesfor performing a pre-read operation for a write operation. FIG. 14 showsexemplary pipeline 1400 for implementing the pipeline flow for systempre-read, write, re-write, and verify operations, among other datamanipulation operations. Pipeline 1400 is implemented using systemoperations 1402, input register 1404, memory pipeline 1406, e1 register1408, and memory bank 1410. Memory pipeline 1406 comprises pre-readregister 1460, write register 1412, delay register 1414, verify register1416, and verify results register 1418. Moreover pipeline 1400 comprisescompare memory logic 1420.

It should be noted that pipeline 1400 can be distinguished from pipeline500 in that the memory pipeline 1406 comprises a pre-read register andpipe-stage 1460 prior to the write register 1412 and pipe-stage.

System operation 1402 performs substantially the same function as systemoperations 502 in FIG. 5. For example, system operation 1402 comprisessignals for performing a desired operation such as system write andsystem read, among other data manipulation operations. As such, systemoperation 1402 typically includes signals indicating a data word, theassociated data address within memory bank 1410, and control signalsindicating the operation to be performed on memory bank 1410 (such aswrite or chip select signal), among other signals for performing datamanipulation operations and maintaining appropriate states. Typically,the signals from system operation 1402 are stored in input register1404. Other configurations for signals from system operation 1402 may beused without departing from the scope of the present disclosure.Moreover, other embodiments of pipeline 1400 are possible withoutdeparting from the teachings of this disclosure. For example, delayregister 1414 allows delay between write and verify operation on a dataword. STT-MRAM may require a delay between write operations at aparticular address and verify operation at the common address. The delaycycle allows data storage elements within memory bank 1410 to return toa stable state before performing verify operation. Other RAMtechnologies, and in some instances STT-MRAM itself, may not requiresuch delay and delay register 1414 is not necessary.

Input register 1404 is coupled to pre-read register 1460. Input register1404 comprises data storage elements comprising data bits. In certainembodiments, input register 1404 can include data bits for a data word,associated address, a valid bit, and other desired control bits. Theinput register 1404 comprises the initial stage of the pipeline.

As mentioned above, in one embodiment, for example, where a pseudo-dualbank memory bank is used, the input register 1404 adds a delay in thepipeline that allows the memory device time to search for a data wordand an associated address in the e1 register 1408 that shares a commonrow address with a data word (associated with a write operation) in theinput register. For example, a write operation may be received into theinput register 1404 from system operations 1402 along with the data wordto be written and its corresponding address. The input register providesthe requisite delay to be able to search in the e1 register for a verifyoperation that shares a common row address with the data word associatedwith the write operation. In this way, a write operation and a verifyoperation can be simultaneously performed since the data words share acommon row address.

The valid bit, as discussed above, indicates whether data manipulationoperations such as system write operation should be performed or theregister should not be used to perform such operations. For example,valid bits based on a write signal and chip select signal provided bysystem operation 1402 may indicate whether data word in input registeris used for write. Input register 1404 may also be coupled to e1register 1408, for example, to transmit associated address and controlbits to e1 register 1408. This associated address and control bits maybe used in case of row address change in the pipeline or to invalidatean e1 register 1400 entry with the same associated address, for example.For example, the address and control bits may be used to look for apending verify operation in the e1 register that shares a common rowaddress with a data word to be written into the memory bank.

An active memory bank of an embodiment of the present disclosure denotesa memory bank in which a system write or system read is taking place.Thus, an active bank signal (or an active bank bit) prevents re-writesduring that clock cycle, and instead indicates that a system write orread will occur during that clock cycle. For example, an active banksignal indicates that write register 1412 will write a data wordpreviously received from input register 1404 to memory bank 1410 duringthat clock cycle. Thus, e1 register knows that data word for re-writeoperation should not be transmitted to write register 1412 during thatclock cycle.

Input register 1404 transmits data word, associated address, and desiredcontrol bits to pre-read register 1460. A pre-read register 1460 can beused in the pipeline for several purposes. For example, the data word,associated address and control bits received from the input register1404 could be associated with a write operation. If the informationtransmitted from input register 1404 into the pre-read register isassociated with a write operation, a pre-read register 1460 can be usedto reduce power consumption by pre-reading the data word to be writtenfrom memory bank 1410. Power consumption is reduced as a result ofperforming a pre-read because instead of writing the data word receivedfrom the input register 1404 directly into the memory bank at theassociated address, the current data word stored at the associatedaddress in the memory bank 1410 is pre-read to determine how many bitsin the current data word need to be flipped in order to conform it tothe newly received data word. For example, if the newly received dataword to be written into the memory bank comprises all l's, but thepre-read operation determines that the data word already written intomemory bank at the associated address also comprises all l's, then poweris saved because the newly received data word would not need to bere-written into the memory. Accordingly, the pre-read operation reducespower consumption by reducing the number of bits that need to be writtenfor each write operation. In other words, the pre-read operation takesinto account that some of the bits in a given word may already be in thecorrect orientation so a write operation does not need to typicallywrite all the bits in the word.

In another embodiment, a pre-read operation is performed as part of abit-redundancy remapping protocol. Examples of on-the-fly bit failuredetection and bit redundancy remapping techniques are described in U.S.patent application Ser. No. 15/792,672, Attorney DocketSPIN-0004-01.01US, filed Oct. 24, 2017, entitled “ON-THE-FLY BIT FAILUREDETECTION AND BIT REDUNDANCY REMAPPING TECHNIQUES TO CORRECT FOR FIXEDBIT DEFECTS” and hereby incorporated by reference in its entirety.

In one embodiment, the pre-read register 1460 may require extra bits tocarry the information acquired as a result of the pre-read operation. Inother words, the pre-read register 1460 not only needs to store the dataword, associated address, and desired control bits received from theinput register 1404, but it also needs to store information acquired asa result of the pre-read operation, e.g., the bits read from memory bank1410. For example, the pre-read register 1460 may need to store maskbits comprising information regarding the bits in the data word receivedfrom the input register that need to be flipped in order to correctlyperform the write operation. Further, the mask bits also need to storeinformation regarding the direction in which the bits get flipped. Inone embodiment of the present invention, pre-read register may also needto store ECC bits in order to perform error correction on the bits thatare read from and written to memory bank 1410.

In one embodiment, instead of carrying the additional bits of storagewithin the pre-read register itself, the memory device can store theadditional bits within e1 register 1408. However, as shown in FIG. 14,the connection between the pre-read register 1460 and the e1 register1408 is optional. In a more typical embodiment, the additional bits willbe stored within the pre-read register 1460, because storing theadditional data in the e1 register may not be desirable in certaincircumstances because of size considerations.

The e1 register 1408 performs substantially the same function as the e1register described in conjunction with FIG. 5. The e1 register 1408 iscoupled to input register 1404, write register 1412, delay register1414, verify register 1416, and verify results register 1420. The e1register may, in one embodiment, be also coupled to pre-read register1460. The e1 register 1408 may supply data word, associated address of adata word within memory bank 1410, and control signals to write register1412, and verify register 1416. The e1 register 1408 may receive a dataword, its associated address, and control signals from delay register1414 and verify results register 1418. The e1 register 1408 may alsotransmit a physical address within e1 register 1408 in case the dataword is already stored within e1 register 1408. Although not shown, ifdelay register 1414 were not used, e1 register 1408 may receive dataword, associated address, and control signals from write register 1412.Moreover, e1 register 1408 may communicate with input register toreceive signals such as data word signal and control signal such asinactive bank signal.

Write register 1412 is coupled to delay register 1414 and memory bank1410. Write register 1412 performs substantially the same function aswrite register 512 in FIG. 5.

Delay register 1414 is coupled to verify register 1416 and e1 register1408. Delay register 1414 performs substantially the same function asdelay register 514 in FIG. 5.

Verify register 1416 is coupled to memory bank 1410 and verify resultsregister 1420. Verify register 1416 performs substantially the samefunction as verify register 516 in FIG. 5.

Compare memory logic 1420 is coupled to verify register 1416. Comparememory logic 1420 performs substantially the same function as comparelogic 520 in FIG. 5. Verify results register 1418 is coupled to comparememory logic 1420 and e1 register 1408. Verify results register 1418performs substantially the same function as verify result register 518in FIG. 5.

One of ordinary skill in the art will understand that pipeline structure1400 is exemplary and may include more write, delay, verify, verifyresults registers, and compare logic blocks to allow more re-writeattempts before writing failed data words to e1 register. Moreover, moreregisters and memory banks may be added without departing from the scopeof the present disclosure.

FIG. 19 depicts an exemplary embodiment for a process flow showing themanner in which a pre-read register is used to perform a write operationin an exemplary memory device of the present disclosure.

At step 1902, a data word, an associated address and control bits arereceived into the input register 1404 from system operations 1402.

At step 1904, as mentioned above, in one embodiment, the input register1404 adds a delay in the pipeline that allows the memory device time tosearch for a data word and an associated address in the e1 register 1408that shares a common row address with a data word (associated with awrite operation) in the input register.

At step 1906, the input register 1404 transmits data word, associatedaddress, and desired control bits to pre-read register 1460. Asindicated above, the pre-read register 1460 can be used in the pipelinefor several purposes. For example, the data word, associated address andcontrol bits received from the input register 1404 could be associatedwith a write operation. If the information transmitted from inputregister 1404 into the pre-read register is associated with a writeoperation, a pre-read register 1460 can be used to reduce powerconsumption by pre-reading the data word to be written from memory bank1410.

Accordingly, at step 1908, the data word stored in the memory bank atthe associated address received from the input register is pre-read.

At step 1910, the data word pre-read from the memory bank is compared tothe data word received from the input register to determine which bitsneed to be flipped in the data word stored in the memory bank in orderto successfully write the new data word received from the input registerinto the memory bank. The results of the comparison can, in oneembodiment, be stored as mask bits in the pre-read register. In oneembodiment, compare logic may be built into the pipeline to perform thiscomparison. As mentioned above, in one embodiment, the pre-read register1460 may require extra bits to carry the information acquired as aresult of the pre-read operation. In other words, the pre-read register1460 not only needs to store the data word, associated address, anddesired control bits received from the input register 1404, but it alsoneeds to store information acquired as a result of the pre-readoperation, e.g., the bits related to the results of the compareoperation.

At step 1912, at least the mask bits, the associated address and controlbits may be transmitted to the write register. In a differentembodiment, the data word to be written to the memory bank (receivedfrom the input register) may also be transmitted along with the maskbits.

At step 1916, the write operation is performed using the mask bits.Further, if a data word and an associated address is received from thee1 register at step 1904, the verify operation that shares a common rowaddress with the write operation is also performed in the same cycle asthe write operation.

FIG. 20 is a block diagram of an exemplary pipeline structure for amemory device that comprises a pre-read pipe-stage for a write operationin accordance with an embodiment of the present invention. As shown inpipeline structure 2000, at any given slice of time, e.g., T=3, T=4 andT=5, there will be a pre-read operation and a write operation beingperformed simultaneously. As each write is being performed in the writeregister, at any given slice of time, another write operation is cominginto the pre-read register from the input register. For example,Instruction 1 2004 enters the pre-read pipestage at time T=2. At time,T=3, when Instruction 1 2004 enters the write register, Instruction 22005 enters the pre-read register. Similarly, at time T=4, Instruction 12004 enters the delay cycle, Instruction 2 enters the write register andnew Instruction 3 2006 enters the pre-read register.

Accordingly, a read and a write operation will need to be performed tothe memory bank 1410 at any given period of time. The memory devicewill, therefore, need an extra port into memory bank 1410. As mentionedearlier, a pseudo-dual port memory bank works in cases where in a singlecycle at most a write operation is performed concurrently with a verifyoperation. The pipeline structure of FIG. 14 would require that a readand a write operation be performed concurrently with a verify operation.Accordingly, two read ports (one for a verify operation and one for aread operation) and one write port will be needed.

Increased Pipeline Depth to Support Additional Write Operations in aMemory Device

FIG. 15 is a block diagram of exemplary embodiment of a memory device ofthe present disclosure showing pipeline structure that allows anadditional cycle for a write operation for storing a data word. Theadditional write cycle in FIG. 15 allows incoming data words to bewritten an additional window to be written accurately into the memorybank. FIG. 15 shows exemplary pipeline 1500 for implementing thepipeline flow for system write, re-write, and verify operations, amongother data manipulation operations. Pipeline 1500 is implemented usingsystem operations 1502, input register 1504, memory pipeline 1506, e1register 1508, and memory bank 1510. Memory pipeline 1506 compriseswrite register A 1560, write register B 1512, delay register 1514,verify register 1516, and verify results register 1518. Moreoverpipeline 1500 comprises compare memory logic 1520.

System operation 1502 comprises signals for performing a desiredoperation such as system write and system read, among other datamanipulation operations. As such, system operation 1502 typicallyincludes signals indicating a data word, the associated data addresswithin memory bank 1510, and control signals indicating the operation tobe performed on memory bank 1510 (such as write or chip select signal),among other signals for performing data manipulation operations andmaintaining appropriate states. Typically, the signals from systemoperation 1502 are stored in input register 1504. Other configurationsfor signals from system operation 1502 may be used without departingfrom the scope of the present disclosure.

Moreover, other embodiments of pipeline 1500 are possible withoutdeparting from the teachings of this disclosure. For example, delayregister 1514 allows delay between write and verify operation on a dataword. STT-MRAM may require a delay between write operations at aparticular address and verify operation at the common address. The delaycycle allows data storage elements within memory bank 1510 to return toa stable state before performing verify operation. Other RAMtechnologies, and in some instances STT-MRAM itself, may not requiresuch delay and delay register 1514 is not necessary.

Input register 1504 is coupled to write register 1512. Input register1504 comprises data storage elements comprising data bits. In certainembodiments, input register 1504 can include data bits for a data word,associated address, a valid bit, and other desired control bits. Theinput register 1504 comprises the initial stage of the pipeline.

In one embodiment, for example, where a pseudo-dual bank memory bank isused, the input register 1504 adds a delay in the pipeline that allowsthe memory device time to search for a data word and an associatedaddress in the e1 register 1508 corresponding to a verify operation thatshares a common row address with a data word in the input register. Thedata word in the input register would be associated with a writeoperation that shares a common row address with the data word for theverify operation in the e1 register. For example, a write operation maybe received into the input register 1504 from system operations 1502along with the data word to be written and its corresponding address.The input register provides the requisite delay to be able to search inthe e1 register for a verify operation that shares a common row addresswith the data word associated with the write operation. The inputregister 1504 provides the necessary delay in the pipeline to be able tolook for the matching verify operation in the e1 register before thedata word to be written is inserted into the write register 1512. Inother words, the delay of input register 1504 allows enough time tosearch for the matching verify operation in the e1 register prior toinserting the data words to be written and verified into the writeregister 1512 and the verify register 1516 respectively.

The valid bit indicates whether data manipulation operations such assystem write operation should be performed or the register should not beused to perform such operations. For example, valid bits based on awrite signal and chip select signal provided by system operation 1502may indicate whether data word in input register is used for write.Input register 1504 may also be coupled to e1 register 1508, forexample, to transmit associated address and control bits to e1 register1508. This associated address and control bits may be used in case ofrow address change in the pipeline or to invalidate an e1 register entrywith the same associated address, for example. For example, the addressand control bits may be used to look for a pending verify operation inthe e1 register that shares a common row address with a data word to bewritten into the memory bank.

An active memory bank of an embodiment of the present disclosure denotesa memory bank in which a system write or system read is taking place.Thus, an active bank signal (or an active bank bit) prevents re-writesduring that clock cycle, and instead indicates that a system write orread will occur during that clock cycle. For example, an active banksignal indicates that write register 1560 will write a data wordpreviously received from input register 1504 to memory bank 1510 duringthat clock cycle. Thus, e1 register knows that data word for re-writeoperation should not be transmitted to write register 1512 during thatclock cycle. Input register 1504 transmits data word, associatedaddress, and desired control bits to write register A 1560.

The e1 register 1508 performs substantially the same functions as the e1register discussed in conjunction with FIGS. 5 and 14. The e1 register1508 is coupled to input register 1504, write register A 1560, writeregister B 1512, delay register 1514, verify register 1516, and verifyresults register 1520. The e1 register 1508 may supply data word,associated address of a data word within memory bank 1510, and controlsignals to write register A 1560, write register B 1512, and verifyregister 1516. The e1 register 508 may receive a data word, itsassociated address, and control signals from delay register 1514 andverify results register 1518. The e1 register 1508 may also transmit aphysical address within e1 register 1508 in case the data word isalready stored within e1 register 1508. Although not shown, if delayregister 1514 were not used, e1 register 1508 may receive data word,associated address, and control signals from one of the write registers.Moreover, e1 register 1508 may communicate with input register toreceive signals such as data word signal and control signal such asinactive bank signal.

Write register A 1560 is coupled to write register B 1512 and to memorybank 1510. Write register 512 comprises data storage elements comprisingdata bits. Typically, write register A 1560 comprises data bits for adata word, its associated address, valid bit, and other desired controlbits. The valid bit is a valid register bit and may be set to one whenwrite register A contents are valid such that write operation may occur.Write register A 1560 receives data word, associated address, anddesired control bits from input register 1504 for system writeoperations. For memory bank clock cycles that write register A 1560would not otherwise be writing system data words to that memory bank, e1register 1508 transmits data words, associated address, and desiredcontrol bits to write register 1560. This allows write register 1560 toattempt re-write operations when write register 1560 would not otherwisebe writing system data words to memory bank 1510.

In one embodiment, write register A 1560 is coupled to another writeregister B 1512. Accordingly, pipeline 1500 comprises two write stages.The purpose of two write stages in the pipeline is to attempt each writeoperation at least twice prior to the verification stage. As mentionedearlier, STT-MRAM may suffer from a high write error rate (WER) and,accordingly, attempting to write each word at least twice prior toverification may reduce the WER associated with the memory.

In one embodiment, an extra port in the memory bank will be required tosupport an additional write operation. FIG. 16 is a block diagram of anexemplary pipeline structure for a memory device that comprises anadditional write stage in accordance with an embodiment of the presentinvention. As shown in pipeline structure 1600, at any given slice oftime, e.g., T=3, T=4 and T=5, there will be two write operations beingperformed simultaneously. Each write will be performed twice, however,at any given slice of time, as one write is going through its secondcycle in write register B 1512, a new write will be incoming into writeregister A 1560. For example, Instruction 1 1605 enters write register Aat time T=2. At time T=3, when Instruction 1 1605 enters write registerB, Instruction 2 1604 enters write register A. Similarly, at time T=4,Instruction 1 1605 enters the delay cycle, Instruction 2 enters writeregister B and new Instruction 3 1606 enters write register A.

Accordingly, two write operations will need to be performed to thememory bank 1510 at any given period of time. The memory device will,therefore, need an extra port into memory bank 1510. As mentionedearlier, a pseudo-dual port memory bank works in cases where in a singlecycle at most a write operation is performed concurrently with a verifyoperation. The pipeline structure of FIG. 15 would require that twowrite operations be performed concurrently with a verify operation.Accordingly, two write ports and a single read (or verify) port intomemory bank 1510 will be needed. Two write ports are necessary becausesimply performing one write in a given cycle and inserting the otherwrite into the e1 register would increase the size of the e1 registerbeyond practical limits.

In one embodiment, a tri-ported memory bank structure can be obtained byadding an extra write port to the pseudo-dual port memory bank structureusing the Y-mux structure as explained in conjunction with FIG. 4. In adifferent embodiment, three separate ports are implemented into thememory bank 1510, wherein two ports are optimized for write operationsand one port is optimized for read operations. As explained earlier,ports that are optimized for write operations will have higher currentrequirements and occupy more physical space than ports that areoptimized for read operations. In one embodiment, the three ports areall implemented using the Y-mux structure discussed in conjunction withFIG. 4. In one embodiment, a true dual port memory bank is implementedfor the two write operations and an extra port is added using the Y-muxstructure for the read port.

In one embodiment, instead of two separate write stages in the pipeline1500, a single write pulse that is double the width of a traditionalwrite pulse can also be used. Within the time period of the single writepulse, there can be two attempts at writing the data word into memorybank 1510.

Write register A 1560 transmits data word, associated address, anddesired control bits to write register B 1512. This way the same dataword can be written twice to the memory bank 1510 in two separatecycles.

It should be noted that read operations generally take precedence overwrite operations from either of write registers. If a read operationoccurs, then the pipeline is typically stalled to allow the readoperation to terminate.

As discussed above, e1 register 1908 can receive a RowChange signal thatindicates row address change within a pipeline structure of the presentdisclosure. When a ROWchng signal is received in the embodiment of FIG.15, there will be an unfinished write in write register A 1560 and awrite that has not been verified yet in write register B 1512.Accordingly, in the embodiment of FIG. 15, the e1 register willtypically be larger than other embodiments because upon receiving aRowChange signal, two entries from the pipeline will be inserted intothe e1 register while the memory operation causing the row change signalto assert is allowed to enter the pipeline. The entry from writeregister A 1560 will need to be re-written and the entry from writeregister B 1512 will need to be verified. In one embodiment, if aRowChange signal is received, the data word that has only passed throughone write stage can be transferred to the e1 register through connection1590 while the other data word that has passed through both write stagescan be transferred to the e1 register through the delay register 1514.The data word sent to the e1 register through connection 1590 would needto be re-written while the data word transmitted from the delay register1514 would need to be verified during a later cycle.

Further, similar to the embodiments discussed in connection with FIGS. 5and 14, the RowChange signal may also be used to indicate that anotherdata word and associated address should be transmitted from e1 register1508 to the pipeline structure for a verify operation. If a pseudo-dualport memory bank is used, e1 register 1508 may choose a data word and anassociated address such that they share a common row address with a dataword to be written into the write register of the pipeline structure. Inthis way, a write operation and a verify operation can be simultaneouslyperformed since the data words share a common row address. The inputregister 504 provides the necessary delay in the pipeline to be able tolook for the matching verify operation in the e1 register before thedata word to be written is inserted into the write register 512. Inother words, the delay of input register 1504 allows enough time tosearch for the matching verify operation in the e1 register prior toinserting the data words to be written and verified into the writeregisters and the verify register 516 respectively. In the embodiment ofFIG. 15, since the write operation passes through two stages of thepipeline, the e1 register has another cycle to be able to look for thematching verify operation. Accordingly, the delay in the input register1504 may not be necessary to provide sufficient time to find a matchingverify operation.

Write register B 1512 is coupled to delay register 1514 and memory bank1510. In other embodiments, write register 1512 may be coupled to verifyregister 1516. Write register 1512 comprises data storage elementscomprising data bits. Typically, write register 1512 comprises data bitsfor a data word, its associated address, valid bit, and other desiredcontrol bits. The valid bit is a valid register bit and may be set toone when write register 1512 contents are valid such that writeoperation may occur. Write register 1504 receives data word, associatedaddress, and desired control bits from write register A 1560 so that thedata word can be written into memory bank 1510 a second time.

For memory bank clock cycles that write register 1504 would nototherwise be writing system data words to that memory bank, e1 register1508 transmits data words, associated address, and desired control bitsto write register 1512. This allows write register 1512 to attemptre-write operations when write register 1512 would not otherwise bewriting system data words to memory bank 1510. In one embodiment, the e1register 1508 can also transmit data words associated with re-writeoperations to write register A 1560 so that the re-write operations mayalso be attempted at least twice in the pipeline.

Delay register 1514 is coupled to verify register 1516 and e1 register1508. Delay register 1514 comprises data storage elements comprisingdata bits. Typically, delay register 1514 comprises a data word,associated address bits, a valid bit, and other desired control bits.Valid bit indicates if delay register 1514 contents are valid. The delayregister or multiple delay register could provide more clock cycle delaybetween write and verify.

As previously explained, the delay register 1514 is optional for RAMtechnologies that require delay between write and verify operations fora particular address within memory bank 1510. If row address changeoccurs within memory pipeline 1504, delay register 1514 transmits dataword, associated address, and desired control bits to e1 register 1508.Thus, data word may be verified on a later clock cycle when writeregister will write a data word sharing a common row address. In anotherembodiment, data word may be verified on a later clock cycle when noverify operation will otherwise occur to the memory bank. If no rowaddress change occurs within memory pipeline 1504, after desired delayclock cycles, delay register 1514 transmits the data word, associatedaddress, and desired control bits to verify register 1516. The additionof a delay between the write register 1560 and the verify register 1516also allows the data transferred from the write register 1512 tostabilize before transferring the information to the verify register1516. This prevents noise from being injected into the verify cycle.

Verify register 1516 is coupled to memory bank 1510 and verify resultsregister 1520. Verify register 1516 performs substantially the samefunction as verify register 516 in FIG. 5.

It should be noted that in one embodiment the second write register B1512 may be placed subsequent to the verify register 1516. In otherwords, instead of having two write registers back to back in thepipeline, one of the write registers may follow the verify register1516. This way a write operation can be attempted in the first writecycle and verified thereafter to ensure that the operation completedsuccessfully. If the write operation did not complete successfully, thenanother write cycle subsequent to the verify operation can be used toattempt a re-write. This may be more efficient in certain cases thanperforming two write operations consecutively on the same data word.Similarly, other combinations are possible that attempt one or morere-write operations at different stages of the pipeline.

In one embodiment, the pipeline illustrated in FIG. 15 could also have apre-read register that performs substantially the same function aspre-read register 1460 in FIG. 14.

Compare memory logic 1520 is coupled to verify register 1516. Comparememory logic 1520 performs substantially the same function as comparelogic 520 in FIG. 5. Verify results register 1518 is coupled to comparememory logic 1520 and e1 register 1508. Verify results register 1518performs substantially the same function as verify result register 518in FIG. 5.

One of ordinary skill in the art will understand that pipeline structure1500 is exemplary and may include more write, delay, verify, verifyresults registers, and compare logic blocks to allow more re-writeattempts before writing failed data words to e1 register. Moreover, moreregisters and memory banks may be added without departing from the scopeof the present disclosure.

One of ordinary skill in the art will understand that pipeline structure1500 is exemplary and may include more write, delay, verify, verifyresults registers, and compare logic blocks to allow more re-writeattempts before writing failed data words to e1 register. Moreover, moreregisters and memory banks may be added without departing from the scopeof the present disclosure.

FIG. 6 is an exemplary process flow showing an embodiment of a systemread operation using an embodiment of memory device of the presentdisclosure. FIG. 6 shows process flow 600 for system read operation ofthe present disclosure. Process flow 600 illustrates the high-level readoperation performed on a memory device. In step 602, a system readoperation to be performed on memory bank exists within a memory device.In step 604, the valid address stored in both pipeline banks are checkedto determine whether the data word associated with system read operationexists there. If no, e1 register checks address to determine whether thedata word associated with system read operation exists there in step606. If no, e2 register checks the address to determine whether the dataword associated with system read operation exists there in step 608. Ifno, the data word is read from memory bank at the associated address ofsystem read operation in step 610. If the result of step 608 is yes, thedata word is read from e2 register in step 618. If the answer to step604 returned yes, then data word is read from pipeline 614. If theanswer to step 606 is yes, then the data word is read from e1 registerin step 616. One of ordinary skill in the art may recognize otherprocess flows for system read operations without departing from theteachings of the present disclosure.

System read process flow 600 may include additional steps. After step610, compare logic may determine whether system data word from memorybank was read within a predetermined error budget in step 612. If thedata word output from memory bank contains errors, such errors may becorrected though ECC. If the data word output from memory bank containedmore errors than allowed by a predetermined error budget, the data wordmay also be corrected and stored in e1 register in step 619. In thisway, e1 register may attempt to re-write data word back to memory bankso that the data word may be read within a predetermined error budget onfuture read operations. The corrected data word and associated addresswould be stored within e1 register.

It should be noted that as discussed above, in one embodiment, the e2register is optional. For memory devices without the additional dynamicredundancy register, the process flows from step 606 directly to step610. In other words, at step 606, e1 register checks address todetermine whether the data word associated with system read operationexists there. If no, then at step 610, the data word is read from memorybank at the associated address of system read operation in step 610.

FIG. 7 is a block diagram of an embodiment of a memory device showing afirst level dynamic redundancy register. FIG. 7 shows exemplary e1register 700 described herein that comprises physical address decoder702, CAM 704, mux 706, RAM 708, status logic 710, and control logic 712.One of ordinary skill in the art will recognize that e1 register 700 isexemplary, and includes features such as CAM 704 which are not requiredfor achieving the teachings of the present disclosure. Moreover, e1register 700 communicates control signals for maintaining consistency ofoperations both internally and to communicate with components of memorydevice such as pipeline banks, e2 register and secure memory storage,e.g., 932. Such control signals may be modified without departing fromthe teachings of the present disclosure.

Physical address decoder 702 is coupled to CAM 704, mux 706, and controllogic 712. Physical address decoder 702 receives an address input fromcontrol logic 712. Physical address decoder 702 uses the address inputto determine the appropriate physical addresses within CAM 704 and RAM708 for performing data manipulation operation, such as read and write.Physical address decoder 702 selects an entry within CAM 704 usingdecode signal. Physical address decoder 702 may also select an entrywithin RAM 708 using decode signal to mux 706.

In one embodiment, physical address decoder 702 may take pointers asinput from control logic 712. Different pointers from control logic 712indicate available addresses for writing data to CAM 704 and RAM 708 orreading data from CAM 704 and RAM 708, or other pointers may be used.For example, pointers from control logic 712 may keep track of lowestopen addresses within CAM 704 and RAM 704. Thus, e1 register 700 keepstrack of addresses for storing new data. Pointers from control logic 712may also keep track of oldest stored data within CAM 704 and RAM 708.Thus, re-write operations may be tried on a First-In-First-Out (FIFO)basis. Other schemes for addressing data within e1 register 700 andselecting data for data manipulation operations may be used by thosewith ordinary skill in the art without departing from the scope of thisdisclosure.

CAM 704 is coupled to mux 706. CAM 704 takes as input decode signal fromphysical address decoder 702. CAM 704 also takes as input an associatedaddress which may be received from input register, delay register, orverify results register of a pipeline structure. CAM 704 also takes asinput control bits such as read, write, or search signal received fromcontrol logic 712. CAM 704 also takes as input other control bits fromstatus logic 710.

The associated address signals indicate addresses within a memory bank.Associated address signal is typically received from input register,delay register, or verify results register. Thus, e1 register 700receives an address within a memory bank where data word should beverified or written. The e1 register 700 may also receive associatedaddress from input register to be searched for words with matching rowaddresses which may be verified. As mentioned above, the input registerallows a delay period for searching words associated with pending verifyoperations in the e1 register that have matching row addresses. CAM 704will typically write associated address from delay register or verifyresults registers to itself, so that associated address may be usedlater for re-write or verify operation.

Status signal, such as valid bit, indicates whether physical addresswithin CAM 704 contains valid data for data manipulation operation. CAM704 may receive status signal from status logic 710.

Read signal indicates that CAM 704 should output an associated address,and RAM 708 should output the corresponding data word. CAM 704 may usedecode and read signal to output an associated address of the data wordstored in RAM 708. For example CAM 704 may output an associated addressof the data word to write register. In this way, write register maywrite data from e1 register in a clock cycle during which it wouldotherwise be inactive.

Write signal indicates that the associated address should be storedwithin CAM 704 and the corresponding data word should be stored withinRAM 708. For example, CAM 704 may use the associated address signal,decode signal, and write signal to write the associated address to aphysical address within CAM 704. In one embodiment, this may occurbecause row address change occurred within pipeline structure and delayregister sent a data word, an associated address, and control bits to e1register 700 for storage. In another embodiment, verify results registermay send a data word, an associated address, and control bits to e1register 700 for storage because verify operation failed or data was notread within a predetermined error budget.

Search signal indicates that CAM 704 should search itself for anappropriate address. For example, CAM 704 uses search signal receivedfrom control logic 712 to search itself for an associated address tooutput to verify register. Thus, if row change has occurred in pipelinestructure, CAM 704 may output the associated address of a data wordsharing a common row address with the data word to be written from thepipeline. In addition, e1 RAM 708 outputs a data word matching theassociated address within CAM 704 to the pipeline.

CAM 704 outputs associated addresses to the pipeline structure, such asto write register and verify register. CAM 704 also outputs associatedaddresses to e2 register or to secure memory storage area 932 (asdiscussed in connection with FIG. 9). CAM 704 may only output a portionof associated address. For example, if row address change occurred andCAM 704 searched itself for an appropriate address for verify operation,CAM 704 may output only the column address since the row address may beknown. CAM 704 also outputs match signal to mux 706. Match signalindicates the physical address within RAM 708 of a data word thatcorresponds to the associated address within CAM 704. Match signal maybe used when reading a data word from RAM 708.

Mux 706 takes as input read, write, search signal from control logic712. Mux 706 also takes as input decode signal received from physicaladdress decoder. Mux 706 also takes as input match signal from CAM 704.Mux then transmits select signal to RAM 708 for data manipulationoperation. If mux 706 receives read signal, mux 706 typically transmitsdecode signal to RAM 708 because decode signal indicates the physicaladdress within RAM 708 for read operation. If mux 706 receives writesignal, mux 706 typically transmits decode signal to RAM 708 becausedecode signal indicates the physical address within RAM 708 for writeoperation. If mux 706 receives search signal, mux 706 typicallytransmits match signal to RAM 708 because match signal indicates thephysical address within RAM 708 for outputting data word.

RAM 708 takes as input select signal from mux 706. RAM 708 also takes asinput a data word received from pipeline structure, such as from delayregister or verify results register. RAM 708 also takes as input readand write signals received from control logic 712. Select signal frommux 706 indicates the physical address within RAM 708 for performingdata manipulation operation such as read or write operation. Data wordsignal indicates the data word for storage within RAM 708. Read signalindicates whether the physical address signal should be used for readoperation such that data should be read from RAM 708 and output topipeline structure or e2 register or secure memory storage. Write signalindicates whether select signal should be used for write operation suchthat data word signal should be written to RAM 708. RAM 708 typicallycomprises volatile memory such as SRAM, but may comprise non-volatilememory such as STT-MRAM.

Status logic 710 comprises hardware logic that drives the selection ofaddresses within control logic 710. Status logic 710 takes as inputcontrol signals from pipeline structure and e2 register. Control signalsmay include RowChange flag previously discussed. Control signals mayalso indicate whether data words associated with verify and re-writeoperations in the e1 register should be processed prior to re-locatingthem to secure memory storage or if the contents of the e1 registershould be dumped in their entirety into the secure memory storage area932. Pipeline structure may also transmit fail count bits to statuslogic 710. In one embodiment, status logic 710 updates a valid bitassociated with a data word to invalid in the case that status logic 710receives fail count bits set to 0. That is, because control signalsreceived from verify results register indicated that verify operationpassed, e1 register 700 invalidates the entry associated with data word(associated addresses, data word, any associated control bits). Statuslogic may also take as input inactive signal indicating that memory bankmay become inactive during a subsequent clock cycle. Thus, e1 registershould output a data word to write register for a re-write operation.Status logic 710 may also receive control signals from e2 register. Forexample, status logic 710 may receive signal indicating that e2 registeris ready for a new data word. Status logic 710 may also receive a signalfrom the secure memory storage indicating that it is ready for a newdata word in embodiments where there is no e2 register. Status logic 710may also receive decode signal from physical decoder 702. Decode signalwill indicate the entry or entries within e1 register 700 which arebeing updated.

Status logic 710 transmits status signals. Status logic 710 transmitsstatus signals both internally and externally. Status logic 710transmits status signals to control logic 710. Status logic 710 may alsotransmit status signals, such as fail count bit, to pipeline structureand e2 register. Thus, control signals from status logic 710 may be usedto maintain consistency of operations both within e1 register 700 andwithin pipeline structure.

Control logic 712 comprises hardware logic for determining operations tobe performed on CAM 704 and RAM 708. Control logic 712 also compriseshardware logic for outputting address signal to physical address decoder702. Control logic 712 takes as input status signals from status logic710. Status signals drive the selection of addresses by control logic712. For example, status signals may indicate that write operationshould be performed on CAM 704 and RAM 708. Control logic may thenincrement a pointer to next address, indicating empty addresses withinCAM 704 and RAM 708 for writing associated addresses and data words. Theaddress signal output from control logic 712 may comprise pointers thatare decoded by physical address decoder 702 to select appropriatephysical addresses within CAM 704 or RAM 708 for performing datamanipulation operation. The address signal output from control logic 712may also be output to the pipeline to indicate physical addresses withine1 register 700.

In this way, e1 register 700 may transmit a data word, its associatedaddress, and its physical address within e1 register 700 to pipelinestructure. The physical address within e1 register 700 may be used toupdate e1 register 700 control bits after verify or re-write operationoccurs. If the re-write operation failed, for example, fail count bitswithin e1 register 700 may be updated using the physical address withine1 register 700.

One of ordinary skill in the art will understand that the specificcontrol signals, logic and structures disclosed with respect to FIG. 7are merely exemplary, and illustrate one of many possibleimplementations of e1 register 700. Other implementations of e1 register700 may be used in conjunction with the teachings of the presentdisclosure.

Smart Dynamic Redundancy Register Design to Prevent E1 Overflow

In one embodiment of the present invention, a memory device may comprisemultiple banks or segments. As noted above, the memory bank may compriseSTT-MRAM which suffers from an inherently stochastic write mechanism,wherein bits have certain probability of write failure on any givenwrite cycle. In other words, the memory cells are characterized byhaving a high write error rate. The dynamic redundancy registers of thepresent disclosure allow the memory bank to be operated with high WER(write error rate). However, designers of the memory device need toensure that the size of a dynamic redundancy register or cache memory,e.g., an e1 register used to store data words associated with pendingverify and re-write operations does not exceed practical limitations.

Accordingly, the e1 register needs to be designed with a sufficientfixed size so that overflow is avoided in all cases. One of the factorsthat need to be taken into consideration in determining an optimal sizefor the e1 register is the WER. For example, for a higher error rate,the e1 register will need to be larger than for a lower error rate. Inone embodiment, the number of entries in the e1 register will be atleast the WER*the size of the memory bank.

Further, in one embodiment, the e1 register will contain at least oneentry per row segment. In one embodiment, the e1 register can contain 2entries per row segment. For example, if each row segment in a memorybank has a 100 rows, then the size of the e1 register would be at least200 entries.

In one embodiment, the number of entries the e1 register needs tocontain per row segment is related to the depth of the pipeline. Inother words, the number of entries the e1 register contains is directlyproportional to the number of pipeline stages (or pipe-stages). This isbecause with a longer pipeline, there will be more data words that needto be stored in the e1 register in case of a row change, e.g., when aRowChange signal is received. For example, as seen in FIGS. 5, 14 and15, the pipeline can have several stages. The more stages the pipelinehas, the higher the number of entries that e1 needs to be designed tocontain. If the pipeline has an additional write stage, as shown in FIG.15, receiving a RowChange signal would mean that the entries in both awrite register and a verify register would need to be saved to beverified at a later time. Accordingly, additional storage space will beneeded in the e1 register as compared to a case where there's only asingle write stage in the pipeline.

In one embodiment, if the memory bank 2100 comprises N rows per segmentand the pipeline has M number of stages, then, the e1 register willcomprise at least N*M entries.

As mentioned above, the number of entries in the e1 register can also bea function of the WER. In one embodiment, the size of the e1 registercan be at least (N*M)+(WER*number of entries in the memory bank).

In one embodiment, the memory device can comprise a plurality of memorybanks as discussed above, wherein each of the memory banks (or segments)can have its own pipeline and a dedicated e1 register. Or alternatively,the memory device can comprise a plurality of memory banks, wherein eachof the memory banks (or segments) can have its own pipeline, but asingle e1 register serves all the segments (instead of a dedicated e1register per segment).

In one embodiment, a warning pin or status bit can be used to indicatedto the user the occupancy level of the e1 register. For example, statusbits may indicate to a user that the e1 register is 25%, 50%, 75% orcompletely full.

FIG. 21 illustrates a smart design for a dynamic redundancy register inaccordance with an embodiment of the present invention. The memory bank2100 comprises multiple addressable memory cells configured in multiplesegments, wherein each segment contains N rows per segment. Each of thesegments can be associated with its own pipeline. As shown in FIG. 21,segment 1 of memory bank 2100 can be associated with pipeline 2150 whilesegment 2 can be associated with pipeline 2151. Each pipeline comprisesM pipestages and are configured to process write operations for datawords addressed to a given segment of a of the memory bank.Alternatively, in one embodiment, a single pipeline can service all thesegments in the memory bank. In other words, the entire memory bankcomprises a single pipeline.

The memory device can also comprise a dynamic redundancy register orcache memory E1 2110. The number of entries, Y, in e1 is based on M, Nand a prescribed word error rate (WER) so as to prevent overflow of thecache memory. In a different embodiment, each of the segments of memorybank 2100 can have its own associated e1 register. However, in a typicalembodiment, a single e1 register services all the segments of the memorybank.

In one embodiment, the number of entries Yin e1 can be calculated usingthe formula: (N*M+B*E), wherein B indicates the number of rows in thememory bank.

In one embodiment, a warning pin(s) or status bit(s) 2105 can be used toindicate to the user the occupancy level of the e1 register. Forexample, status bits may indicate to a user that the e1 register is 25%,50%, 75% or completely full.

A Method of Optimizing Write Voltage Based on Error Buffer Occupancy

As noted above, memory bank 2100 may comprise STT-MRAM which suffersfrom an inherently stochastic write mechanism, wherein bits have certainprobability of write failure on any given write cycle. In other words,the memory cells are characterized by having a high write error rate.The dynamic redundancy registers (e.g., e1 2110) of the presentdisclosure allow the memory bank to be operated with high WER (writeerror rate). As also noted previously, designers of the memory deviceneed to ensure that the size of a dynamic redundancy register or cachememory, e.g., an e1 register used to store data words associated withpending verify and re-write operations does not exceed practicallimitations. Furthermore, designers need to provide for a way to relievethe pressure off of the dynamic redundancy register, e.g., e1 2110 if itis approaching close to its capacity. In other words, designers need toprovide a mechanism to prevent the dynamic redundancy register fromoverflowing if it is filling up too rapidly. The e1 register needs to bedesigned to avoid overflow in all cases.

FIG. 22 is a block diagram of an exemplary embodiment of a memory devicethat optimizes write voltage based on error buffer occupancy inaccordance with an embodiment of the present invention. As shown in FIG.22, the e1 register (also known as an ‘error buffer’) 2214 stores datawords that are to be verified or re-written to a memory bank 2210. Theerror buffer 2214 is coupled to the memory array 2210 through pipeline2212 as discussed in detail, for example, in FIGS. 5, 14 and 15. Thememory bank may be an MRAM array. In one embodiment, the MRAM maycomprise STT-MRAM.

In one embodiment of the present invention, as entries in the e1register (also known as an ‘error buffer’) 2214 increase, the writevoltage on the write cycles to the memory bank can be increased in orderto reduce the error rate. In one embodiment, the write voltage on boththe bit and source lines of the memory cell are increased. Increasingthe write voltage on write cycles to the memory bank of an MRAM arraydecreases the WER. Because the memory cells are written to with a highervoltage, there is a lesser likelihood of a memory cell being written toincorrectly. Under typical operating conditions, increasing writevoltage will consume more energy and reduce the reliability of thememory because the oxide in the memory cells wears down faster at highervoltage rates. Nevertheless, in order to prevent the e1 register fromoverflowing, embodiments of the present invention have built-in logiccircuitry 2216 to recognize when the error buffer is filling up and toincrease the voltage temporarily to reduce the error rate. Reducing theerror rate advantageously reduces the number of entries placed into thee1 register because data words tend to be written correctly on a firstattempt without requiring re-writes. Further, read operations are alsoless likely to add more entries to the e1 register.

It should be noted, however, operating the memory at higher writevoltages for longer periods of time may cause the memory cells to weardown faster. In one embodiment, if a data word in the memory bank hasone or more memory cells that have failed or completely worn down, thatdata word is transferred or moved over to the e1 register. Subsequently,all accesses to that data word are from the e1 register as opposed tothe memory bank.

As mentioned previously, in one embodiment, a warning pin(s) or statusbit(s) 2105 can be used to indicate to the user the occupancy level ofthe e1 register. For example, status bits may indicate to a user thatthe e1 register is 25%, 50%, 75% or completely full. Similarly, in oneembodiment, status bits 2286 indicating buffer occupancy can be relayedto a logic module 2216 that determines how close to full the e1 registeris getting. The status bits may, for example, indicate the level ofoccupancy of the e1 register or error buffer. The higher the number ofstatus bits available, the higher the precision with which the logicmodule 2216 can determine the occupancy levels of the error buffer.

Responsive to a determination that the occupancy level of the e1register is increasing, or has crossed a predetermined threshold, thelogic module 2216 communicates with the write voltage digital-to-analogconverter (DAC) 2228, which in turn increases the write voltage on thewrite drivers 2238.

In one embodiment, logic circuitry 2216 is configured to monitor cacheoccupancy to modulate the write voltage for error buffer and enduranceoptimizations. Using a higher write voltage at higher error bufferoccupancy levels optimizes the error buffer by reducing the WER and,thereby, ensures that there is less likelihood of the error bufferexceeding capacity. Similarly, logic circuitry 2216 also enablesendurance optimization because it lowers the write voltage in responseto lower cache occupancy levels, thereby, reducing write stress andpromoting higher endurance.

In one embodiment, logic circuitry 2216, over a period of time,stabilizes the write voltage at an optimal level, which allows theoccupancy level of the error buffer to not exceed a predeterminedthreshold while at the same time maintaining an acceptable level ofendurance. In other words, logic circuitry 2216 can be programmed toselect an optimal write voltage level that achieves a balance betweenerror buffer occupancy levels and memory endurance levels. Accordingly,the self-trimming of the write voltage on the memory chips by logiccircuitry 2216 can result in higher endurance levels for memory chipsbecause the write voltage can be dynamically adjusted to operate atlower levels in response to low error buffer occupancy levels.

In one embodiment, the logic module 2216 can be programmed so that theincrease in write voltage is proportional to the occupancy level of theerror buffer 2214. For example, if the error buffer is 25% full, thewrite voltage is increased by 25%. Alternatively if the error buffer isclose to 75% full, the write voltage would be increased by 75%. In oneembodiment, the write voltage is not increased until the occupancy levelof the e1 register surpasses a threshold level, e.g., 25%. For example,the write voltage is increased after the error buffer is more than 25%full.

The logic circuitry 2216 monitors the buffer occupancy signals 2286 tokeep track of the occupancy level of the error buffer. Once the errorbuffer starts falling below a certain threshold level, for example, thewrite voltage can be decreased accordingly. For example, if the errorbuffer is less than 25%, the write voltage can be dialed down to normaloperating conditions.

In this way, embodiments of the present invention advantageously allowdynamic control over the occupancy levels of the error buffer. Byoptimizing the write voltage based on error buffer occupancy, the errorbuffer is prevented from ever getting overfull or exceeding capacity.Similarly, as mentioned above, endurance levels are optimized becauseembodiments of the present invention are able to reduce the writevoltage in response to lower error buffer occupancy levels.

In one embodiment of the present invention, instead of adjusting thewrite voltage, the pulse width of the write cycle can be modified basedon the error buffer fill rate. Similar to increasing the write voltage,increasing the pulse width can reduce the WER. Accordingly, as the errorbuffer becomes more full, the pulse width of the write cycle can beincreased to reduce the write error rate. Conversely, as the errorbuffer empties out, the pulse width can be reduced in order to optimizefor endurance. The logic circuitry 2216 can alter the pulse width usingthe write pulse width control module 2218. The pulse width controlmodule 2218 communicates with the write drivers 2238 to effectuate thepulse width change on the write cycle. Controlling the pulse widthallows an extra level of control over the WER, which is usefulespecially in cases where the write voltage cannot be increased anyfurther. Therefore, to avoid chip breakdown, the pulse width can beincreased instead of increasing the write voltage.

It should be noted that increasing the pulse width allows the samevoltage to be applied for a longer duration and, therefore, it alsocauses oxide related stress in the memory cells. Accordingly, the logiccircuitry module 2216 should be programmed to reduce the pulse width inresponse to lower error buffer occupancy levels.

In one embodiment, logic circuitry 2216 can be configured to controlboth the write voltage level (through write voltage DAC 2228) and thewrite pulse width (through write pulse width control module 2218) inorder to achieve an optimal operating write voltage level for the chip.In such an embodiment, both write voltage and the write pulse width maybe increased and decreased together to attain an optimal operating writevoltage level for the chip. Alternatively, in a different embodiment,the write voltage and write pulse width may be adjusted in phases. Forexample, in response to an error buffer that is getting full, the writevoltage may be increased at first. Subsequently, if the error buffercontinues to get full, the write pulse width may be increased beforeattempting to increase the write voltage to a higher voltage step. Also,in the scenario that the write voltage has been increased beyond anacceptable threshold, it is important to give the test and/or productengineers the flexibility to adjust the write pulse width. Once thewrite voltage level has been increased beyond an acceptable threshold,only the write pulse width may be increased to control the occupancylevel of the error buffer.

Embodiments of the present invention advantageously allow for dynamicself-trimming in the field. Instead of the needing to select an optimalvoltage level at test, the logic circuitry 2216 can be programmed topick the optimal voltage level based on the error rates. For example, asthe life of the chip gets older, the error rate may increase and,accordingly, the logic circuitry may need to apply a higher writevoltage in order to prevent the occupancy levels of the error bufferfrom increasing. The logic circuitry 2216 self-trims by adjusting thewrite voltage higher in response to higher occupancy levels of the errorbuffer without requiring human intervention.

Embodiments of the present invention also advantageously reduce testtime because the test and/or product engineers do not have to manuallyfind an optimal operational voltage for each memory chip, which can varybetween chips. In other words, embodiments of the present invention canbe used to self-trim the write voltage on memory chips. Typically, testtime is used up by engineers to determine the appropriate voltage levelfor each die. Further, the engineers will typically need to select adifferent operational voltage for each life cycle of the die, e.g.,early life, mid-life and end-of-life voltages. It is appreciated thatinstead of using up valuable test time in determining appropriatevoltage levels for each life cycle of a chip, embodiments of the presentinvention dynamically adjust the voltage levels based on the error rateand the concomitant error buffer occupancy levels.

Temperature conditions may also affect the optimal operating voltagelevels of a memory chip. Embodiments of the present invention allow thememory chip to dynamically adjust the write voltage levels to thechanging temperature levels simply by monitoring the error bufferoccupancy levels. This conserves engineer time in determining optimalvoltage levels for various temperature ranges. Instead, a testtechnician or engineer may simply select an acceptable starting voltagefor each chip and allow the logic circuitry module 2216 to converge thewrite voltage to an optimal level based on the error buffer occupancylevels. As a result, the product lifecycle is increased because thelogic circuitry module can dynamically select the optimal write voltagefor higher endurance levels.

FIG. 23 depicts an exemplary embodiment for a process flow showing themanner in which the write voltage for a memory bank is optimized basedon error buffer occupancy levels in accordance with an embodiment of thepresent invention.

At step 2302, the error buffer (or e1 register) 2214 is monitored by thelogic circuitry 2216 to determine the occupancy level of the errorbuffer. At step 2304, the logic circuitry determines if the error bufferoccupancy level has increased past a predetermined threshold. Thethreshold information may be programmed or configured into the logiccircuitry.

At step 2306, responsive to a determination that the error bufferoccupancy level has crossed the predetermined threshold, a signal istransmitted from the logic circuitry 2216 to the write voltagedigital-to-analog converter (DAC) 2228, where the write voltage DACcontrols the write voltage on the write drivers 2238 of the memory bank2210.

At step 2308, the write voltage on the write drivers 2238 is increasedso subsequent data words written into the memory bank 2210 are writtenusing a higher write voltage.

At step 2310, logic circuitry 2216 further determines if the errorbuffer occupancy levels have decreased below the predeterminedthreshold. At step 2312, responsive to a determination that the errorbuffer occupancy level has decreased below the predetermined threshold,log circuitry transmits a signal to the write voltage DAC. At step 2314,in response to the signal transmitted to the write voltage DAC, thewrite voltage on the write drivers 2238 is decreased so that incomingdata words are written into the memory bank at a lower write voltage.Thereafter, the process continues until the voltage level converges toan optimal level. Alternatively, if the voltage level does not convergeto an optimal level, the process continues to increase or decrease thewrite voltage as necessary depending on the occupancy level of the errorbuffer.

FIG. 24 depicts an exemplary embodiment for a process flow showing themanner in which the pulse width for write cycles of a memory bank isoptimized based on error buffer occupancy levels in accordance with anembodiment of the present invention.

At step 2402, the error buffer (or e1 register) 2214 is monitored by thelogic circuitry 2216 to determine the occupancy level of the errorbuffer. At step 2404, the logic circuitry determines if the error bufferoccupancy level has increased past a predetermined threshold. Thethreshold information may be programmed or configured into the logiccircuitry.

At step 2406, responsive to a determination that the error bufferoccupancy level has crossed the predetermined threshold, a signal istransmitted from the logic circuitry 2216 to the write pulse widthcontrol module 2218, where the write pulse width control module controlsthe write voltage on the write drivers 2238 of the memory bank 2210.

At step 2408, the write drivers 2238 are adjusted to increase the pulsewidth so subsequent data words written into the memory bank 2210 arewritten using a longer write pulse width.

At step 2410, logic circuitry 2216 further determines if the errorbuffer occupancy levels have decreased below the predeterminedthreshold. At step 2412, responsive to a determination that the errorbuffer occupancy level has decreased below the predetermined threshold,transmit a signal to the pulse width control module 2218. At step 2414,in response to the signal transmitted to the pulse width control module,the pulse width on the write drivers 2238 is adjusted so that incomingdata words are written into the memory bank using a shorter pulse width.Thereafter, the process continues until the voltage level converges toan optimal level. Alternatively, if the voltage level does not convergeto an optimal level, the process continues to increase or decrease thepulse width as necessary depending on the occupancy level of the errorbuffer.

A Multi-Chip Module for MRAM Devices

As noted previously, memory bank, e.g., memory bank 2100 may compriseSTT-MRAM which suffers from an inherently stochastic write mechanism,wherein bits have certain probability of write failure on any givenwrite cycle. In other words, the memory cells are characterized byhaving a high write error rate. The dynamic redundancy registers (e.g.,e1 104 or e2 106) of the present disclosure allow the memory bank to beoperated with high WER (write error rate). The dynamic redundancyregisters perform error management for the MRAM memory bank by storingdata words (and associated addresses) for pending verify and re-writeoperations.

As also noted above, in one embodiment, the e1 register may be locatedoff the memory chip and on a system card or even on the CPU. In otherwords, the e1 register can be located on a different chip besides thememory chip. Similarly, the e2 register may also be located off thememory chip. Neither, the e1 register nor the e2 register need to belocated on the same chip as the memory chip.

In one embodiment, in order to increase density and optimize the use ofthe MRAM engine, MRAM engine is separated out from the memory banks ontoa different die. The MRAM engine is the control engine of the memory andmay comprise the e1 register, the e2 register, one or more pipelines,control registers and any other control logic used to control the memoryand the dynamic redundancy registers (e.g., e1 and e2). The MRAM memoryarrays comprising the one or more memory banks are separated out onseparate dies. In other words, the MRAM engine would be fabricated on asingle die while the dies comprising the memory arrays may be fabricatedon separate dies. In one embodiment, the dies comprising the memoryarrays may be stacked on top of the MRAM engine die. It should be notedthat in different embodiments the MRAM engine die may be located at anyposition within the stack and is not necessarily at the bottom.

For example, referring to FIG. 21, each of the memory bank segments canbe on a separate die that is stacked on top of a MRAM engine die,wherein the MRAM engine die comprises the pipelines (e.g., 2150 and2151) and one or more dynamic redundancy registers (e.g., 2110). It wasnoted earlier in connection with FIG. 21 that in a different embodiment,each of the segments of memory bank 2100 can have its own associated e1register. In such an embodiment, all the e1 registers associated withthe respective memory bank segments would be located on the MRAM enginedie while each of the respective memory bank segments may be located ona separate die. Alternatively, all the memory bank segments may beplaced on a single die.

By way of further example, referring to FIG. 17, each of the memorybanks, A 1702 and B 1703 may be located on a separate die. The diescomprising the memory banks may be stacked on top of an MRAM engine diecomprising the dynamic redundancy registers, control logic, and thevarious multiplexers and decoders illustrated in FIG. 17.

FIG. 25 illustrates the manner in which stacking dies by usingthrough-silicon vias can be used to increase memory density and optimizethe use of the MRAM engine in accordance with an embodiment of thepresent invention. As one having ordinary skill in the art wouldappreciate, a through-silicon via (TSV) is a vertical electricalconnection (via) that passes completely through a silicon wafer or die.TSVs are high performance interconnect techniques used as an alternativeto wire-bond and flip chips to create 3D packages and 3D integratedcircuits. Compared to alternatives such as package-on-package, theinterconnect and device density is substantially higher, and the lengthof the connections becomes shorter.

Embodiments of the present invention use TSVs to stack dies in a waysuch that the MRAM memory bank dies are separated out and stacked atopthe MRAM engine die (or dies). Stacking dies using TSVs allowsembodiments of the present invention to achieve a higher memory densityand optimize the use of the MRAM engine. For example, the control logicalong with the dynamic redundancy registers may comprise a large numberof I/O signals—using TSVs helps facilitate inter-board routing of thesignals without needing to create long traces or routes on any given dieor board.

It should be noted that using TSVs is not the only way to implementembodiments of the present invention. For example, multi-die packagescan be implemented in other ways that allow the memory banks to bestacked separately from the MRAM engine.

As shown in FIG. 25, four MRAM dies 2510, 2520, 2530 and 2540 arestacked on top of an MRAM engine die 2550. This configuration achieves amuch higher internal bandwidth than conventional MRAM memory designs.The close integration of the MRAM engine control die with the memorybanks using the TSV interconnects leads to higher density. TSVs arevertical interconnects that can pass through the silicon wafers of a 3Dstack of dies. A TSV has a much smaller feature size than a traditionalPCB interconnect, which enables a 3D-stacked MRAM to integrate hundredsto thousands of these wired connections between stacked layers. Usingthis large number of wired connections, 3D-stacked MRAM can transferbulk data simultaneously, enabling much higher bandwidth compared toconventional MRAM.

FIG. 25 shows a 3D-stacked MRAM based system that comprises the fourlayers of MRAM dies and an MRAM engine control die stacked together andconnected using TSVs, a processor die 2560, and a silicon interposer2565 that connects the stacked MRAM and the processor 2560. The verticalconnections in the stacked MRAM are considerably wide and short, whichresults in high bandwidth and low power consumption, respectively. Itshould be noted that embodiments of the present invention are notlimited to only 4 layers of MRAM dies. There can be several layers ofMRAM memory dies, for example, stacked on top of the MRAM engine module2550, wherein the communication between the layers takes place usingTSVs. Similarly, the MRAM engine may be spread across multiple dies aswell. Accordingly, in one embodiment of the present invention, the MRAMarchitecture can comprise M layers of memory dies stacked atop N layersof MRAM engine dies.

In one embodiment, instead of having a separate processing die 2560,computational or processing units are placed inside the memory systemwhere the data resides. This improves performance from both a bandwidthand latency standpoint and reduces energy consumption in the memory. Forexample, processing capability may be added to the MRAM engine die 2250.The computation inside or near the MRAM memory dies significantlyreduces the need to transfer data to/from the processor 2560 over thememory bus. Thus, the processing in the memory results in a considerableperformance improvement and energy reduction compared to conventionalMRAM architectures which must transfer all data to/from the processorsince the processor is the only unit that performs all the computationaltasks.

In one embodiment, the stacked MRAM configuration of FIG. 25 along withprocessing capabilities added to the MRAM engine enableshigh-performance and low-power systems. The multiple stacked MRAM diesare controlled by the tightly-integrated MRAM engine layer 2550.

In one embodiment, the MRAM engine layer 2550 will comprise additionalmemory management and control logic to control the MRAM memory banks. Inthis embodiment, the MRAM engine layer may be able to use the controllogic and memory management to manage bad addresses and locations priorto using the dynamic redundancy registers of the MRAM engine in order tostore data words (and associated addresses) for pending verify andre-write operations.

In one embodiment, the MRAM engine module, in addition to processingcapabilities, may also include certain memory modules as well. In otherwords, it is not essential for the MRAM engine module to exclusivelycomprise control logic—the MRAM engine module may also comprise one ormore memory banks. The MRAM engine die 2550 may in certain casescomprise memory banks that did not fit onto the memory dies 2510, 2520,2530 and 2540. In such an embodiment, the MRAM engine die 2550 may be alarger die than the other memory dies. However, in an alternativeembodiment, where the MRAM engine die does not comprise any memory, theMRAM engine die may be the same size as the other die in the stack.

Similarly, in one embodiment, the dies comprising memory banks may alsocontain parts of the control logic. In other words, it is not essentialfor the control logic, pipelines and other registers to resideexclusively on the MRAM engine die. For example, the pipeline banks(e.g., 308 and 310) associated with the memory banks (e.g., 304 and 306)may be located on the same die as the memory banks.

Memory dies 2510, 2520, 2530 and 2540 typically will not comprise anycontrol logic.

Embodiments of the present invention allow for higher density MRAMwithin a single package. The MRAM engine can be implemented on aseparate die from the memory die, which increases MRAM die density andoptimizes the usage of the MRAM engine to multiple die.

In one embodiment, the MRAM engine (comprising the dynamic redundancyregisters, pipelines and control logic) allows a reduced cell size orcell current for the memory bank cells. The dynamic redundancyregisters, as explained above, allow the memory banks to be operatedwith high WER (write error rate). Reducing the cell size or cell currentof the memory bank may be advantageous in certain cases because reducingthe memory cell size allows for higher density memories while reducingthe cell current allows for power savings. However, reducing the cellsize or cell current may, in certain cases, lead to higher WER. The MRAMengine advantageously enables the memory banks to operate with a higherWER, particularly where the dynamic redundancy registers are sized toaccommodate a higher number of entries. Accordingly, the MRAM memorybanks can be designed with smaller transistor sizes—the memory banks canrely on the MRAM engine to absorb the ramifications of the associatedhigher WER.

Furthermore, by separating out the MRAM engine from the memory banks,embodiments of the present invention advantageously allow differentfabrication and process technologies to be used for the memory bank diesas compared with the MRAM engine die. For example, the MRAM memory onlydies may be fabricated with a technology used for cheap and low-costmemory cells of reduced size. By comparison, the MRAM engine may needtransistors that are faster. Accordingly, the MRAM engine die may befabricated with a high speed CMOS process. In one embodiment, the memorydies may use specialized transistors—embodiments of the presentinvention would allow the memory bank dies to be fabricated usingspecialized processing technology, e.g., specialized technologyassociated with the transistors that optimizes MRAM performance ordensity. Meanwhile, the MRAM engine die may be fabricated using CMOStechnology required for high-speed logic.

FIG. 8 is a block diagram of an embodiment of a memory device of thepresent disclosure showing a last level dynamic redundancy register.FIG. 8 shows exemplary e2 register 800 described herein that comprisesCAM/RAM/Enbl/Pointers block 802, mux 816, e2 RAM 818, and physical y-mux832, sense amplifier 834, error correction code bits 836, write register838, and control logic 840. One of ordinary skill in the art willrecognize that e2 register 800 is exemplary, and includes features suchas RAM Memory bank FC 814 which are not necessary for achieving theteachings of the present disclosure. Moreover, e2 register 800communicates control signals for maintaining consistency of operationsboth internally and to communicate with components of memory device suchas pipeline banks, memory banks, and e1 register. Such control signalsmay be modified without departing from the teachings of the presentdisclosure.

CAM/RAM/Enbl/Pointers block 802 comprises physical address decoder 804,address CAM 806, RAM update flag 807, RAM enable 808, RAM e2 fail count810, RAM used count 812, and RAM memory bank FC 814. Thus, block 802comprises data storage elements comprising data bits. Block 802 is usedfor storing control bits and associated addresses of data words.

Physical address decoder 804 receives an address inputs from controllogic 840. As explained in relation to e1 register and FIG. 7, physicaladdress decoder 804 uses address inputs to determine physical addressesfor writing associated addresses and data words to CAM 806 and RAM 818,respectively. Physical address decoder 804 outputs decode signal to CAM806 and mux 816. Moreover, physical address decoder 804 may outputdecode signal to physical y-mux 832.

CAM 806 stores associated addresses for data words. As explained inrelation to e1 register and FIG. 7, CAM 806 may take as inputs variouscontrol signals and associated addresses. CAM 806 can then writeassociated addresses to itself or determine appropriate physical addresswithin RAM 818 for matching data word. Typically, such data word wouldbe output, for example, to pipeline banks or memory banks.

RAM update flag 807 comprises control bits for determining whetherassociated data should be updated within RAM 818. For example, controlsignals received from control logic 840 may indicate that RAM 818 entryshould be updated based on a new data word. RAM update flag 807 thusprovides a mechanism to track data words that should be updated in caseit is not possible to update the data word immediately.

RAM enable 808 comprises control bits indicating whether e2 RAM 818contains a valid data word. RAM enable 808 may thus require that allbits be set to one, for example, to provide a stringent mechanism toensure that RAM 818 includes valid data. RAM enable 808 may be output tocontrol logic 840 so that control logic may keep track of valid datawithin block 802 and RAM 818. One of ordinary skill in the art willrecognize that other schemes may be used to ensure reliability of datawords. For example, multiple copies of data word may be maintained inRAM 818 and selected based on a voting scheme. In another scheme, a morestringent error correction code (ECC) scheme may be performed within e2register 800 than in memory bank. In another scheme, RAM 818 points toparticular addresses within main memory for storing data words ratherthan storing the data words within e2 register 800 itself.

RAM e2 fail count 810 indicates the number of times a data word hasfailed to write to e2 RAM 818. For example, RAM 818 may comprisenon-volatile STT-MRAM in an embodiment. In that case, e2 register 800may write to RAM 818 until write operation is successful in order tomaintain reliability within e2 register 800. Thus, e2 fail countindicates the number of times a data word has failed to write to RAM818. RAM e2 fail count 810 may be output to control logic 840, so thatcontrol logic 840 may output appropriate addresses for writing to RAM818.

RAM used count 812 indicates the number of times that a physical addresswithin e2 RAM 818 has been used. The e2 register 800 may desire to keeptrack of the number of times that a particular physical address withinRAM 818 has been used. For example, the number of times that a readoperation has occurred, write operation has occurred, or both to aspecific physical address within RAM 818.

RAM memory bank FC 814 indicates the number of times that a data wordhas failed to write to a memory bank. For example, e2 register 800 maydesire to keep track of the number of times that a write operation frome2 register 800 has failed to the memory bank. This may be useful sothat only a desired number of re-write operations are tried. Thespecific components of block 802 are exemplary and may be modifiedwithout departing from the teachings of the present disclosure. Forexample, one of ordinary skill in the art will recognize that RAM memorybank FC 814 is optional and provides a mechanism for controlling thenumber of re-write attempts to memory bank.

Mux 816 is coupled to CAM/RAM/Enbl/Pointers block 802 and e2 RAM 818.Mux 816 takes as input decode signal from physical address decoder 804indicating physical address within e2 RAM 818 and match signal from CAM806 indicating that match exists within e2 RAM 818. Thus, as explainedwith respect to e1 register 700 of FIG. 7, e2 RAM 818 can perform reador write operation. If e2 RAM 818 comprises MRAM, write operations maybe tried a number of times based on RAM e2 fail count 810. In anotherembodiment, after a predetermined number of write attempts to physicaladdress within e2 RAM 818, RAM used count 812 may operate to indicatethat another location within e2 RAM 818 should be chosen for writeoperation.

The e2 RAM 818 comprises RAM data 820, RAM address 822, RAM enable 824,RAM used count 826, and Memory Bank FC 830. The e2 RAM 818 may comprisevolatile or non-volatile memory. In one embodiment, The e2 RAM 818comprises non-volatile memory such as MRAM so that contents may be savedon during power down.

RAM data 820 comprises data storage elements comprising data bitsstoring a data word received from e1 register. RAM address 822 stores anassociated address within a memory bank for the data word stored withinRAM data 820. For example, CAM 806 may store an associated address toRAM address 822. RAM enable 824 stores the same enable bits as RAMenable 808. RAM used count 826 stores the same used count as in RAM usedcount 812. Memory Bank FC 830 stores the same fail count as RAM MemoryBank FC 814. Thus, block 802 comprising volatile storage (e.g., SRAM)may be backed up to non-volatile storage (e.g., MRAM).

Similar to the explanation given with respect to FIG. 4, y-mux 832allows read and write operations to be performed on RAM 818. Senseamplifiers 824 are used to read RAM 818. ECC block 836 allows errorcorrecting on RAM 818. Write Register 938 may comprise CAM for searchingwrite register contents. Write register 838 receives data word andaddress from e1 register. Write register 838 also communicates with e2control logic 840 to, for example, send ready e2 ready signal when writeregister 838 is ready for new data word from e1 register.

Control logic 840 comprises hardware logic. Control logic 840 determinesappropriate operations (such as read, write, and search) to be performedon e2 register 800. Control logic 840 also determines addresses. Aspreviously explained in connection with FIG. 7, control logic 840 mayuse many different addressing schemes. In one embodiment, control logic840 uses pointers to determine physical addresses within block 802 andRAM 818 for writing data words. Control logic 840 may also communicatewith other components of memory device including pipeline banks, memorybanks, and e1 register. For example control logic 840 transmits e2 flagto e1 register to indicate that e2 register 800 may receive a new dataword to write register 838.

Bi-Polar Write Scheme

As noted above, a memory bank, e.g., memory bank 102 or 2100 maycomprise STT-MRAM which suffers from an inherently stochastic writemechanism, wherein bits have certain probability of write failure on anygiven write cycle. In other words, the memory cells are characterized byhaving a high write error rate. The dynamic redundancy registers (e.g.,e1 104, e1 2110 etc.) of the present disclosure allow the memory bank tobe operated with high WER (write error rate). As also noted previously,designers of the memory device need to ensure that the size of a dynamicredundancy register or cache memory, e.g., an e1 register used to storedata words associated with pending verify and re-write operations doesnot exceed practical limitations. Furthermore, designers need to providefor a way to relieve the pressure off of the dynamic redundancyregister, e.g., e1 2110 if it is approaching close to its capacity. Inother words, designers need to provide a mechanism to prevent thedynamic redundancy register from overflowing if it is filling up toorapidly. The e1 register needs to be designed to avoid overflow in allcases.

FIG. 26 is a block diagram of an exemplary embodiment of a memory devicethat optimizes write voltage for bit-line and source-line independentlybased on the number of errors resulting from write ‘1’s and write ‘0’sin accordance with an embodiment of the present invention. As shown inFIG. 26, the e1 register (also known as an ‘error buffer’) 2614 storesdata words that are to be verified or re-written to a memory bank 2610.The error buffer 2614 is coupled to the memory array 2610 throughpipeline 2612 as discussed in detail, for example, in FIGS. 5, 14 and15. The memory bank may be an MRAM array. In one embodiment, the MRAMmay comprise STT-MRAM.

In the embodiment discussed in connection with FIG. 22, as entries inthe e1 register (also known as an ‘error buffer’) 2214 increase, thewrite voltage on the write cycles to the memory bank can be increased inorder to reduce the error rate. In the embodiment of FIG. 22, the writevoltage on both the bit and source lines of the memory cell areincreased. Increasing the write voltage on write cycles to the memorybank of an MRAM array decreases the WER. Because the memory cells arewritten to with a higher voltage, there is a lesser likelihood of amemory cell being written to incorrectly. Under typical operatingconditions, increasing write voltage will consume more energy and reducethe reliability of the memory because the oxide in the memory cellswears down faster at higher voltage rates. Nevertheless, in order toprevent the e1 register from overflowing, the embodiment of FIG. 22comprises a built-in logic circuitry 2216 to recognize when the errorbuffer is filling up and to increase the voltage temporarily to reducethe error rate.

The embodiment of FIG. 22, however, does not discriminate between thetypes of write errors that cause the error buffer 2214 to fill up. Inother words, the embodiment of FIG. 22 increases the write voltage onboth the bit and source lines of the memory cell. In a typical memory,however, there may be circumstances as a result of which the number ofwrite ‘1’ fails exceeds the number of write ‘0’ fails, or vice versa.Accordingly, increasing the write voltage on both the bit and sourcelines indiscriminately may lead to memory cells wearing down faster thannecessary.

A write ‘1’ operation on an MRAM cell has properties that are distinctfrom a write ‘0’ operation. As noted above, MRAM is a non-volatilememory technology that stores data through magnetic storage elements.These elements are two ferromagnetic plates or electrodes that can holda magnetic field and are separated by a non-magnetic material, such as anon-magnetic metal or insulator. This structure is known as a magnetictunnel junction (“MTJ”). In general, one of the plates has itsmagnetization pinned (i.e., a “reference layer”), meaning that thislayer has a higher coercivity than the other layer and requires a largermagnetic field or spin-polarized current to change the orientation ofits magnetization. The second plate is typically referred to as the freelayer and its magnetization direction can be changed by a smallermagnetic field or spin-polarized current relative to the referencelayer.

MRAM devices store information by changing the orientation of themagnetization of the free layer. In particular, based on whether thefree layer is in a parallel or anti-parallel alignment relative to thereference layer, either a “0” or a “1” can be stored in each MRAM cell.Due to the spin-polarized electron tunneling effect, the electricalresistance of the cell changes due to the orientation of the magneticfields of the two layers. The cell's resistance will be different forthe parallel and anti-parallel states and thus the cell's resistance canbe used to distinguish between a “1” and a “0”.

FIGS. 27A and 27B illustrate the manner in which either a “0” or a “1”can be stored in an MRAM cell. As illustrated in FIG. 27A and FIG. 27B,a magnetic tunnel junction (MTJ) storage element 2700 can be formed fromtwo magnetic layers 2710 and 2730, each of which can hold a magneticfield, separated by an insulating layer 2720, which can be, for examplea tunnel barrier layer, or the like. One of the two layers such as fixedlayer 2710, is set to a particular polarity. The polarity 2732 of theother layer, such as free layer 2730, is free to change to match that ofan external field that can be applied. A change in the polarity 2732 ofthe free layer 2730 will change the resistance of the MTJ storageelement 2700. For example, as shown in FIG. 27A, when the polarities arealigned, a low resistance state exists (corresponding to a “0” state).When the polarities are not aligned, as shown in FIG. 27B, a highresistance state exists (corresponding to a “1” state). The illustrationof MTJ 2700 has been simplified and it will be appreciate that eachlayer illustrated may include one or more layers of materials, as isknown in the art.

MRAM devices are considered as the next generation structures for a widerange of memory applications. MRAM products may be based on spin torquetransfer switching, which is already making its way into large datastorage devices. Spin transfer torque magnetic random access memory(“STT-MRAM”) or spin transfer switching, uses spin-aligned (“polarized”)electrons to change the magnetization orientation of the free layer inthe magnetic tunnel junction. In general, electrons possess a spin, aquantized number of angular momentum intrinsic to the electron. Anelectrical current is generally unpolarized, which means it consists of50% spin up and 50% spin down electrons. Passing a current though amagnetic layer polarizes electrons with the spin orientationcorresponding to the magnetization direction of the magnetic layer(e.g., polarizer), thus produces a spin-polarized current. If aspin-polarized current is passed to the magnetic region of a free layerin the magnetic tunnel junction device, the electrons will transfer aportion of their spin-angular momentum to the magnetization layer toproduce a torque on the magnetization of the free layer. Thus, this spintransfer torque can switch the magnetization of the free layer, which,in effect, writes either a “1” or a “0” based on whether the free layeris in the parallel or anti-parallel states relative to the referencelayer, as noted previously.

STT-MRAM devices belong to a class of devices relying on bipolar memoryelements. Bipolar memory elements use currents to “write” data to amemory element. Depending on the direction of current flow, a logic high“1” or logic low “0” bit may be written to the memory element. Suchbipolar memory devices may include MRAM, resistive random-access memory(RRAM), phase-change memory (PCM), among others. For example, RRAMdevices may utilize memristors as a memory element. Current flowing inone direction may be used to write a logic “1” to the memristor. Currentflowing in the opposite direction may be used to write a logic “0” tothe memristor.

In MRAM devices, data is stored in program latches during both write andverify operations. Data stored in the latches (write buffer) determinesthe voltage condition on bit lines during write operations. In writeoperations, bit line and source line bias are dependent on the datastored. For example, if the data to be written is logic zero “0”, thebit line can be driven high while the source line is driven low. If thedata to be written is logic one “1”, the opposite bias condition wouldneed to exist in order to reverse the polarity of current flow acrossthe MTJ. In this case for writing logic one “1”, the source line wouldbe driven high while the bit line would be driven low.

FIGS. 28A and 28B illustrate exemplary circuitry that may be used toimplement write operations.

FIG. 28A shows operation of exemplary bipolar memory device 2800, inthis case, an MRAM device, during write “0” operations. Bipolar memorydevice 2800 includes memory cell 2802 coupled to source line 2808 andbit line 2810. Memory cell 2802 comprises MTJ 2804 and select transistor2806. Select transistor is further coupled to word line 2812. MTJ 2804is coupled to bit line 2810 and select transistor 2806 is coupled tosource line 2808. During write “0” operations, voltage node 2814 onsource line is driven low while voltage node 2816 on bit line is drivenhigh. It is appreciated that verify and read operations may also occurwith the same bias conditions. Read and verify operations have similarcharacteristics because they both entail reading the contents of thememory cell, therefore, both operations may be carried out with the samebias conditions.

Voltage node 2814 may be driven to ground or otherwise held close to 0V.Voltage node 2816 may be driven to a positive voltage. Voltage node 2816is driven to for example, 1.0 V for verify operations; 1.2 V for readoperations; and a higher voltage for write operations. Voltage isapplied to word line 2812 to activate select transistor 2806 to allowcurrent i to flow between bit line and source line.

During write “0” operation, the voltage differential across memory cell2802 causes current i to flow. Current i causes the magnetization offree layer of MTJ 2804 to align, or become parallel, with the referencelayer of MTJ 2804. During verify and read operation, the current i isnot sufficient to alter the state of free layer and the bit stored inMTJ 2804 may be ascertained.

FIG. 28B shows operation of exemplary bipolar memory device 2850, inthis example, an MRAM device, during write “1” operation. Bipolar memorydevice 2850 includes memory cell 2852 coupled to source line 2858 andbit line 2860. Memory cell 2852 comprises MTJ 2854 and select transistor2856. Select transistor is further coupled to word line 2862. MTJ 2854is coupled to bit line 2860 and select transistor 2856 is coupled tosource line 2858. Bipolar memory device 2850 of FIG. 28B is identical tobipolar memory device 2800 of FIG. 28A except that polarity of voltageson source and bit lines are flipped. Thus, voltage node 2864 on sourceline 2858 is driven high and voltage node 2866 bit line 2860 is drivenlow. Voltage node 2864 may also be at a slightly higher voltage forwrite “1” operation than corresponding voltage on the bit line duringwrite “0” operation. This is because the voltage drop across selecttransistor 2856 is higher in this configuration. Moreover, voltage onword line 2862 is chosen to enable current flow. This opposite biasconditions causes current i to flow in the opposite direction frombipolar memory device 2800 of FIG. 28A. This results in write “1”operation.

Because voltage node 2864 may need to be at a slightly higher voltagefor write “1” operation than corresponding voltage on the bit lineduring write “0” operation and because a write “1” results in themagnetization of free layer of MTJ 2854 to become anti-parallel (whichis a higher resistance state than the parallel configuration), write “1”operations exhibit different characteristics from write “0” operations.Accordingly embodiments of the present invention optimize the writevoltage for bit-line and source-line independently based on the numberof errors resulting from write ‘1’s and write ‘0’s.

The embodiment of the present invention illustrated in FIG. 26 adjuststhe write voltages for bit line and source line independently based onthe number of errors that are caused by write ‘0’ failures as comparedto write ‘1’ failures. In other words, write ‘1’ failures are trackedindependently from write ‘0’ failures. If the number of errors caused bywrite ‘1’ failures exceeds a predetermined threshold, then the sourceline voltage (e.g., voltage 2864) would be increased during a writeoperation. On the other hand, if the number of errors caused by write‘0’ failures exceeds a predetermined threshold, then the bit linevoltage (e.g., voltage 2816) would be increased during a writeoperation. The embodiment of FIG. 26 is advantageous because it does notincrease the write voltage on both the bit and source linesindiscriminately thereby causing the memory cells to wear down faster.This is especially advantageous in circumstances where there issignificant differences in the number of errors generated by write ‘1’versus write ‘0’ operations.

Further, the embodiment of FIG. 26 allows the ability to limit themaximum voltage separately on the bit lines versus the source lines. Forexample, in certain instances the maximum allowed voltage on the bitlines of the memory array may be different from the maximum allowedvoltage on the source lines. In such cases, the ability to limit themaximum voltage separately on the bit lines versus the source lines maybe necessary for preserving the longevity of the memory chip.

As mentioned previously, in one embodiment, a warning pin(s) or statusbit(s), e.g., bits 2105 (as shown in FIG. 21) can be used to indicate tothe user the occupancy level of the e1 register 2214. For example,status bits may indicate to a user that the e1 register is 25%, 50%, 75%or completely full. Similarly, in one embodiment, status bits 2687indicating buffer occupancy can be relayed to a logic module 2616 thatdetermines how close to full the e1 register is getting. The status bitsmay, for example, indicate the level of occupancy of the e1 register orerror buffer. The higher the number of status bits available, the higherthe precision with which the logic module 2616 can determine theoccupancy levels of the error buffer.

Further, in the embodiment of FIG. 26, additional logic circuitry (notshown) may be added to the verify circuits of the memory engine in orderto separately track the number of write ‘1’ fails versus write ‘0’fails. Alternatively, a dual-pass verify scheme may also be used, whereduring each pass either the write ‘1’s or write ‘0’s are verified so asto be able to track them separately. However, the dual-pass verifyscheme would typically increase verify time.

In one embodiment, the number of write ‘1’ fails and write ‘0’ fails canbe tracked separately using at least two non-volatile counters. In oneembodiment, the counter values may be stored in the error buffer 2614.In one embodiment, the number of write ‘1’ fails may be tracked using acounter 2698 in error buffer 2614 while the number of write ‘0’ failsmay be tracked using a counter 2699 in error buffer 2614. In oneembodiment, if e1 2614 comprises volatile memory, the values of counters2698 and 2699 may need to be saved in the memory array 2610 (or inanother non-volatile location on the memory chip) upon power down andrestored back upon power up.

The logic driver circuitry 2616 may receive the counter values 2686 fromthe e1 buffer 2614 to determine whether to increase the source linevoltage (for write ‘1’ errors) or the bit line voltage (for write ‘0’errors). Alternatively, the counters may be maintained elsewhere on thememory chip. It should be noted that the counter values will preferablybe maintained in non-volatile memory so that the values can be preservedin case of power shut-down.

Responsive to a determination that the counter value for write ‘1’errors has crossed a predetermined threshold, logic driver 2616 may beconfigured to communicate with the write voltage digital-to-analogconverter (DAC) 2628, which in turn increases the write voltage on thewrite drivers 2638. More specifically DAC 2628 is configured to increasethe write voltage on the write drivers for the source lines of memoryarray 2610. In one embodiment, logic driver 2616 uses only the countervalue for write ‘1’ errors (obtained using signal 2686) to determinewhether to increase the write voltage for the source lines.

Responsive to a determination that the counter value for write ‘0’errors has crossed a predetermined threshold, logic driver 2616 may beconfigured to communicate with the write voltage digital-to-analogconverter (DAC) 2688, which in turn increases the write voltage on thewrite drivers 2638. More specifically DAC 2688 is configured to increasethe write voltage on the write drivers for the bit lines of memory array2610. In one embodiment, logic driver 2616 uses only the counter valuefor write ‘0’ errors (obtained using signal 2686) to determine whetherto increase the write voltage for the bit lines. In another embodiment,logic driver 2616 uses the error occupancy level 2687 of the errorbuffer 2614 in conjunction with the counter value for write ‘0’ errors(2686) to determine whether to increase the write voltage for the bitlines.

In one embodiment, the error buffer occupancy 2687 can be determinedusing the counter values 2686 for the write ‘1’ and write ‘0’ errors.

In one embodiment, logic circuitry 2616 is configured to monitor countervalues 2686 (and/or error cache occupancy levels 2687) to modulate thewrite voltage (for bit line and source line) for error buffer andendurance optimizations. Using a higher write voltage for either thesource lines or the bit lines (depending on whether there are more write‘1’ errors or write ‘0’ errors) optimizes the error buffer by reducingthe WER and, thereby, ensures that there is less likelihood of the errorbuffer exceeding capacity. Similarly, logic circuitry 2616 also enablesendurance optimization because it lowers the write voltage for the bitlines or source lines in response to lower counter values (and/or lowercache occupancy levels), thereby, reducing write stress and promotinghigher endurance. In other words, if the counter values for the write‘1’ or write ‘0’ errors drops, logic circuitry 2616 is configured tolower the corresponding source line or bit line voltages respectively.In one embodiment, the counter values may, for example, be reduced ordecreased as entries are removed from the error cache 2614. Accordingly,the counters will typically comprise logic circuitry to increase ordecrease the corresponding values based on the number of entries in thee1 buffer 2614.

Embodiments of the present invention are therefore able to takeadvantage of the different maximum voltages for the bit lines and thesource lines of the memory array 2610. The maximum voltages for bitlines and source lines of the memory array are determined by memoryendurance or WER upturn limitations. WER upturn refers to the conditionwhere over a threshold voltage level the number of resulting writeerrors in the memory will increase as opposed to decreasing.

Also, as noted above, voltage node 2864 on the source line may need tobe at a slightly higher voltage for a write “1” operation thancorresponding voltage on the bit line during a write “0” operation(because of the voltage drop across transistor 2856 and because a write“1” results in the magnetization of free layer of MTJ 2854 to becomeanti-parallel as mentioned in relation to FIGS. 27 and 28). Accordingly,the embodiment illustrated in FIG. 26 provides the advantage of beingable to adjust the bit line and source line voltages independently ofeach other. For example, if the maximum allowed voltage on the sourcelines is higher than the maximum allowed voltage on the bit line, thecorresponding maximum voltage for write ‘1’ operations will be higherthan the maximum allowable voltage for write ‘0’ operations. In thisway, the write ‘1’ operation may have a higher predetermined threshold(for increasing the write voltage) than the predetermined threshold forincreasing the write voltage for write ‘0’ operations.

Embodiments of the present invention also advantageously preventvoltages for all write operations from being incrementedindiscriminately. For example, if most of the errors are resulting fromwrite ‘1’ operations, the source line voltages can be increased usingwrite voltage DAC 2628 while leaving the bit line voltages unchanged.This preserves the overall life of the memory chip.

In one embodiment, the write voltage for the write ‘1’ and write ‘0’operations are incremented at predetermined threshold levels of thecounter. For example, when a memory chips is first powered up, the writevoltages for both write ‘1’ and write ‘0’ operations may start at adefault power level. If, for example, the number of write ‘1’ errorsbegin to increment and the counter value for write ‘1’ errors goes up bya predetermined threshold number, the write voltage for write ‘1’operations will be incremented (leaving the voltage for the write ‘0’operations unchanged). If incrementing the voltage for the write ‘1’operations subsequently decreases the number of write ‘1’ errors, thecounter for write ‘1’ errors will eventually be decremented.Alternatively, if the number of errors continues to increase, at thenext threshold level of the counter, the write voltage for write ‘1’operations will be increased again. The write voltages will continue tobe adjusted until the voltage levels for both the write ‘1’ and thewrite ‘0’ operations reach an equilibrium.

In one embodiment, logic circuitry 2616, over a period of time,stabilizes the write voltage at an optimal level, which prevents thecounter values 2686 from exceeding a predetermined threshold level. Italso prevents the occupancy level of the error buffer from exceeding apredetermined threshold while at the same time maintaining an acceptablelevel of endurance. In other words, logic circuitry 2616 can beprogrammed to select an optimal write voltage level that achieves abalance between error buffer occupancy levels and memory endurancelevels. Accordingly, the self-trimming of the write voltage on thememory chips by logic circuitry 2616 can result in higher endurancelevels for memory chips because the write voltage can be dynamicallyadjusted to operate at lower levels in response to low counter valuesand/or error buffer occupancy levels. Further, the ability to adjustwrite voltages for write ‘1’s and write ‘0’s independently also resultsin increased endurance levels for memory chips.

In one embodiment of the present invention, if either the write ‘1’voltage or the write ‘0’ voltage is approaching its maximum value,instead of adjusting the write voltage, the pulse width of the writecycle, for either the write ‘1’ or the write ‘0’ can be modified basedon the error buffer fill rate. It should be noted that the embodiment ofFIG. 26 enables the pulse width for the write ‘1’ to be modifiedindependently of write ‘0’. It should further be noted that there may bea circumstance in which the maximum voltage for only one of the twowrite voltage (the write ‘1’ or the write ‘0’) has been reached—in thiscase the pulse width can be increased for the write operation that hasreached its maximum value while the voltage for the write operation thathas not reached its maximum value may still be adjusted upwards. Forexample, if only the write ‘1’ voltage has reached its maximum allowedvalue, any further adjustments to the write ‘1’ operation can only bemade using the pulse width. Meanwhile, because the write ‘0’ voltage hasnot yet reached its maximum allowed value, the voltage for the write ‘0’can continue to be increased until it reaches its maximum value.

Similar to increasing the write voltage, increasing the pulse width canreduce the WER. Accordingly, if the counter values continues to increaseand the error buffer becomes more full, the pulse width of the writecycle for either the write ‘1’ or the write ‘0’ operation can beincreased to reduce the write error rate. Conversely, as the countervalues decrease and the error buffer empties out, the pulse width foreither write operation can be reduced in order to optimize forendurance. The counter values may be decreased, for example, as entriesare removed from the e1 buffer 2614.

The logic circuitry 2616 can alter the pulse width using the write pulsewidth control modules 2618 and 2678. If the write ‘1’ voltage hasreached its maximum value, subsequent adjustments to the write ‘1’operation need to be in the form of increasing the write ‘1’ pulse widthusing module 2618. Similarly, if the write ‘0’ voltage has reached itsmaximum value, subsequent adjustments to the write ‘0’ operation need tobe in the form of increasing the write ‘0’ pulse width using module2678. As noted previously, embodiments of the present inventionadvantageously allow the pulse-widths for both the write ‘1’ and thewrite ‘0’ operations to be adjusted independently of each other. In adifferent embodiment, instead of adjusting the pulse-width for the write‘1’ and write ‘0’ operations independently, the pulse-width for bothoperations is set to the worst case. For example, if write ‘1’operations need to be performed with a longer pulse-width than write ‘0’operations, both the pulse-widths for the write ‘1’ and write ‘0’operations are set to the pulse-width required for the write ‘1’operation—in other words, the pulse width for both operations are set tothe longer of the two cases. An advantage of having the same pulse-widthfor both write ‘1’ and write ‘0’ operations is that both write ‘1’ andwrite ‘0’ operations can be performed in a single pass. If write ‘1’ andwrite ‘0’ operations have different pulse widths, then a separate passis required for each case, which is potentially slower.

The pulse width control modules 2618 and 2678 communicate with the writedrivers 2638 to effectuate the pulse width change on the write cycle.Controlling the pulse width allows an extra level of control over theWER, which is useful especially in cases where the write voltages foreither the write ‘1’s or the write ‘0’s cannot be increased any further.Therefore, to avoid chip breakdown, the pulse width can be increasedinstead of increasing the write voltage.

It should be noted that increasing the pulse width allows the samevoltage to be applied for a longer duration and, therefore, it alsocauses oxide related stress in the memory cells. Accordingly, the logiccircuitry module 2616 should be programmed to reduce the pulse width inresponse to lower error buffer occupancy levels.

In one embodiment, the counter values for tracking the write ‘1’ andwrite ‘0’ errors can be stored during power down and recalled duringpower up. Storing the counter values is important so that on power up,the memory chip can ascertain how to adjust the write voltages (for boththe write ‘1’ and write ‘0’ operations) using logic circuitry 2616. Inthe embodiment where the counter values are stored in error buffer 2614and received by the logic circuitry using signal 2687, during power uprecall, the counter values are simply added back to the error buffer2616. It should be noted that a separate field in the e1 register 2614would be used for the number of write ‘1’ fails and the number of write‘0’ fails.

In one embodiment, logic circuitry 2616 can be configured to controlboth the write voltage levels (through write voltage DACs 2628 and 2688)and the write pulse widths (through write pulse width control modules2618 and 2678) in order to achieve an optimal operating write voltagelevel for the chip. In such an embodiment, both write voltages and thewrite pulse widths may be increased and decreased together to attain anoptimal operating write voltage level for the chip. Alternatively, in adifferent embodiment, the write voltages and write pulse widths may beadjusted in phases. For example, in response to counter values 2686 thatare increasing (and/or an error buffer that is getting full), the writevoltages may be increased at first. Subsequently, if the counter valuescontinue to increase and/or the error buffer continues to get full, thewrite pulse widths may be increased before attempting to increase thewrite voltages to a higher voltage step. Once the write voltage levelshave been increased beyond an acceptable threshold (e.g. the maximumvoltages), only the write pulse widths may be increased to control theoccupancy level of the error buffer.

Embodiments of the present invention advantageously allow for dynamicself-trimming in the field. Instead of the need to select an optimalvoltage level at test, the logic circuitry 2616 can be programmed topick the optimal voltage levels for the write ‘1’s and the write ‘0’sbased on the error rates. For example, as the life of the chip getsolder, the error rates for either the write ‘1’s or the write ‘0’s (orboth) may increase and, accordingly, the logic circuitry may need toapply a higher write voltage to one or both of the write operations inorder to prevent the occupancy levels of the error buffer fromincreasing. The logic circuitry 2616 self-trims by adjusting the writevoltages for the write operations higher in response to higher countervalues and/or occupancy levels of the error buffer without requiringhuman intervention. It should be noted that there may be instances inwhich the write voltage for either the write ‘1’ or the write ‘0’ mayneed to be increased but not both.

Embodiments of the present invention also advantageously reduce testtime because the test and/or product engineers do not have to manuallyfind an optimal operational voltage for each memory chip, which can varybetween chips. In other words, embodiments of the present invention canbe used to self-trim the write voltages on memory chips. Typically, testtime is used up by engineers to determine the appropriate voltage levelfor each die. Further, the engineers will typically need to select adifferent operational voltage for each life cycle of the die, e.g.,early life, mid-life and end-of-life voltages. It is appreciated thatinstead of using up valuable test time in determining appropriatevoltage levels for each life cycle of a chip, embodiments of the presentinvention dynamically adjust the voltage levels based on the error rateand the concomitant error buffer occupancy levels. Furthermore,embodiments of the present invention allow the voltage levels for thewrite ‘1’ and write ‘0’ operations to be adjusted independently of eachother allowing the engineers an extra degree of flexibility.

Temperature conditions may also affect the optimal operating voltagelevels of a memory chip. Embodiments of the present invention allow thememory chip to dynamically adjust the write voltage levels to thechanging temperature levels simply by monitoring the counter values 2686and/or error buffer occupancy levels. This conserves engineer time indetermining optimal voltage levels for various temperature ranges.Instead, a test technician or engineer may simply select an acceptablestarting voltage for each chip and allow the logic circuitry module 2616to converge the write voltages (for the write ‘1’ and the write ‘0’operations) to optimal levels based on the counter values and/or errorbuffer occupancy levels. As a result, the product lifecycle is increasedbecause the logic circuitry module can dynamically select the optimalwrite voltages for higher endurance levels.

In this way, embodiments of the present invention advantageously allowdynamic control over the occupancy levels of the error buffer. Byoptimizing the write voltages based on error buffer occupancy, the errorbuffer is prevented from ever getting overfull or exceeding capacity.Similarly, as mentioned above, endurance levels are optimized becauseembodiments of the present invention are able to reduce the writevoltage in response to lower error buffer occupancy levels.

FIG. 29 depicts an exemplary embodiment for a process flow showing themanner in which the write ‘1’ and write ‘0’ voltage for a memory bank isoptimized based on counter values in accordance with an embodiment ofthe present invention.

At step 2902, the counter values for write ‘1’ and write ‘0’ errors 2686may be monitored by logic circuitry 2616 to track the number of write‘1’ and write ‘0’ errors. In one embodiment, logic circuitry 2616 mayalso monitor error buffer occupancy levels 2687 in conjunction with thecounter values.

At step 2904, logic circuitry 2616 determines if the first counter valueor second counter value has increased past a predetermined threshold.The threshold information may be programmed or configured into the logiccircuitry.

At step 2906, responsive to a determination that the first counter valuehas crossed the predetermined threshold, a signal is transmitted fromthe logic circuitry 2616 to the first write voltage digital-to-analogconverter (DAC) 2628, where the first write voltage DAC controls thewrite voltage on the write ‘1’ drivers (from the write drivers 2638) ofthe memory bank 2610.

At step 2908, responsive to a determination that the second countervalue has crossed the predetermined threshold, a signal is transmittedfrom the logic circuitry 2616 to the second write voltagedigital-to-analog converter (DAC) 2688, where the second write voltageDAC controls the write voltage on the write ‘0’ drivers of the memorybank 2610.

At step 2910, the write voltage on either the write ‘1’ or write ‘0’ (orboth) drivers is increased so subsequent data words written into thememory bank 2610 are written using a higher write ‘1’ or write ‘0’ (orboth) voltage.

At step 2912, logic circuitry 2616 further determines if the first orsecond counter levels (and, optionally, the error buffer occupancylevels) have decreased below the predetermined threshold.

At step 2914, responsive to a determination that the first or secondcounter values have decreased below the predetermined threshold,transmitting a signal to the first or second DAC to reduce acorresponding write ‘1’ or write ‘0’ voltage (or both if both countervalues have decreased).

Thereafter, the process continues until the voltage level converges toan optimal level. Alternatively, if the voltage level does not convergeto an optimal level, the process continues to increase or decrease thewrite ‘1’ or write ‘0’ voltages as necessary depending on the countervalues (and, optionally, occupancy level of the error buffer).

FIG. 30 depicts an exemplary embodiment for a process flow showing themanner in which the write ‘1’ and write ‘0’ pulse widths for writecycles for a memory bank is optimized based on counter values inaccordance with an embodiment of the present invention.

At step 3002, the counter values for write ‘1’ and write ‘0’ errors 2686may be monitored by logic circuitry 2616 to track the number of write‘1’ and write ‘0’ errors. In one embodiment, logic circuitry 2616 mayalso monitor error buffer occupancy levels 2687 in conjunction with thecounter values.

At step 3004, logic circuitry 2616 determines if the first counter valueor second counter value has increased past a predetermined threshold.The threshold information may be programmed or configured into the logiccircuitry.

At step 3006, responsive to a determination that the first counter valuehas crossed the predetermined threshold, a signal is transmitted fromthe logic circuitry 2616 to the first write pulse-width control (PWC)module 2618, where the first PWC module controls the write pulse-widthon the write ‘1’ drivers (from the write drivers 2638) of the memorybank 2610.

At step 3008, responsive to a determination that the second countervalue has crossed the predetermined threshold, a signal is transmittedfrom the logic circuitry 2616 to the second pulse-width control (PWC)module 2678, where the second PWC controls the write pulse-width on thewrite ‘0’ drivers of the memory bank 2610.

At step 3010, the write pulse-width on either the write ‘1’ or write ‘0’(or both) drivers is increased so subsequent data words written into thememory bank 2610 are written using a higher write ‘1’ or write ‘0’ (orboth) pulse-width. As mentioned above, in one embodiment the write ‘1’pulse width can be set independently of the write ‘0’ pulse width. In adifferent embodiment, however, the longer of the two pulse-widths isused as the pulse-width for both operations. In this way, the pulsewidths for both operations are kept the same and both types of writeoperations can be performed at the same time.

At step 3012, logic circuitry 2616 further determines if the first orsecond counter levels (and, optionally, the error buffer occupancylevels) have decreased below the predetermined threshold.

At step 3014, responsive to a determination that the first or secondcounter values have decreased below the predetermined threshold,transmitting a signal to the first or second PWC to reduce acorresponding write ‘1’ or write ‘0’ pulse-width (or both if bothcounter values have decreased).

Thereafter, the process continues until the voltage level converges toan optimal level. Alternatively, if the voltage level does not convergeto an optimal level, the process continues to increase or decrease thewrite ‘1’ or write ‘0’ pulse widths as necessary depending on thecounter values (and, optionally, occupancy level of the error buffer).

MRAM Noise Mitigation for Write Operations with Simultaneous BackgroundOperations

As noted previously, in one embodiment, the memory bank, e.g., memorybank 102, 402 etc. comprises a pseudo-dual port memory bank allowingmemory device 100 to simultaneously (e.g., substantially within a memorydevice clock cycle) perform a write operation and a background verifyoperation sharing a common row (word line) address. The Y-mux structureof the present disclosure allows pseudo-dual port memory banks, e.g.,304-308 to perform simultaneous write and verify operations sharingcommon row address and different column address. As explained above, apseudo-dual port memory bank may have one port optimized to performwrite operations and another port optimized to perform read (or verify)operations. As noted in connection with FIGS. 28A and 28B, read andverify operations have similar characteristics because they both requirereading the contents of a memory cell, therefore, both operations may becarried out with the same bias conditions on the bit lines and sourcelines.

As discussed previously, generally, e1 register 104 stores data wordsand associated addresses for data in memory bank 102 that have not beenverified or have failed verification. In one embodiment, e1 register 104may store data words that have not been verified. For example, e1register 104 receives a ROWchange signal that indicates row addresschange within a pipeline structure of the present disclosure. TheROWchange signal indicates that the data word and the associated addressfrom the pipeline structure should be stored within e1 register 104. TheROWchange signal may also indicate that that another data word andassociated address should be transmitted from e1 register 104 to thepipeline structure for a verify operation. If a pseudo-dual port memorybank is used, e1 register 104 may choose a data word and an associatedaddress such that they share a common row address with a data word inthe write register of the pipeline structure. In this way, a writeoperation and a verify operation can be simultaneously performed sincethe data words share a common row address. The simultaneous verifyoperation is typically performed in the background during the writecycle to prevent the e1 buffer 104 from overflowing. Accordingly, forevery write, the engine searches for a verify within the error buffer104 that matches the same row.

FIG. 31 illustrates the manner in which noise from bit-line coupling mayimpact a verify (or read) operation if it is on the same word line orrow as a write operation on an adjacent memory cell (an adjacent writeoperation). One of the challenges that may occur with the pseudo-dualport scheme of implementing a write operation and a background verifyoperation sharing a common row (word line) address is that whenimplementing the write operation, noise from bit-line coupling canimpact an adjacent verify (or read) operation that is on the same row.As noted in connection with FIGS. 28A and 28B, the voltage for writeoperations is higher than the voltage for verify (e.g. 1.0V) and readoperations (e.g. 1.2V). Accordingly, the capacitive effects frombit-line coupling from an adjacent write operation may easily impact averify or read operation that is on the same word line.

FIG. 31 comprises a memory array with source lines 3102, 3106 and 3110,bit-lines 3104, 3108 and 3112, and word lines 3182 and 3184. Further,memory array comprises memory cells 3120, 3122 and 3124. If a writeoperation is being performed on memory cell 3122, an adjacent backgroundverify (or read) operation on memory cells 3120 or 3124 may be affecteddue to capacitive effects from bit-line coupling between the bit-linesof the neighboring cells.

Accordingly, in one embodiment of the present invention, additionalcircuitry is required in the memory design to prevent a verify (or read)operation that is adjacent to a write operation on the same row fromsimultaneously activating. In one embodiment, the additional circuitrymay also be programmed to prevent a second write operation that isadjacent to a first write operation on the same row from simultaneouslyactivating. In other words, in some cases two writes may be attempted onthe same row that are adjacent to each other. Additional circuitry maybe programmed, therefore, to filter out the additional write operationto avoid the effects of bit-line coupling.

FIG. 32 is a block diagram of an exemplary embodiment of a memory deviceof the present disclosure showing the manner in which a verify operationadjacent to a simultaneously occurring write operation on the same rowcan be filtered out in accordance with an embodiment of the presentinvention. FIG. 32 comprises similar elements to FIG. 18 discussedpreviously. As discussed in connection with FIG. 18, the Y-mux structureof the present disclosure allows pseudo-dual port memory banks toperform simultaneous write and verify operations sharing common rowaddress and different column address. FIG. 32 shows a portion of memorydevice 3200 comprising memory bank 3202, row decoder 3204, write columndecoder and y-mux 3206, and read column decoder and y-mux 3208. Notethat memory bank 3202, row decoder 3204, write column decoder and y-mux3206, and read column decoder and y-mux 3208 perform substantiallysimilar functions as the corresponding components in FIG. 18. Furthernote that write column decoder and y-mux 3206, row decoder 3204 and readcolumn decoder and y-mux 3208 together comprise a read/write port forthe pseudo dual port memory bank.

FIG. 32 shows a Y-mux structure for decoders 3206 and 3208. Memory bank3202 typically comprises a plurality of memory cells. As discussedpreviously, the Y-mux structure allows simultaneous verify and writeoperations for data words sharing a common row address (word line) inthe memory bank but different column address. For example, the rowdecoder 3204 may activate a row address 3250 (an x address). At the sametime, column decoder and Y-mux 3206 multiplexes the column bit-lines3251 based on a column address (WR_A_COL) to arrive at the column linesassociated with the addressed data word in the Y-mux. In other words,the WR_A_COL signal is used to select the appropriate column bit-lines3251 to write the data inputted through the WR_D signal. In the samecycle as column decoder and Y-mux 3206 are writing a data word to thememory bank 3202, the read column decoder and Y-mux 3208 is used toperform the verify operation that shares the common row address (on row3250) as the write operation. For example, the read address 3252 is usedto select the appropriate bit-lines for the verify (or read) operationand the result is outputted through the D-out signal. Accordingly, thecolumn decoder and Y-mux 3206 are used to write a data word into thememory bank 3202 at a row address 3250 in the same cycle as the readcolumn decoder and Y-mux 3208 is used to verify (or read) a data wordfrom row address 3250.

In one embodiment of the present invention, additional logic circuitry3290 may be added (e.g., to the e1 buffer) in the selection of the readaddresses presented to the read column decoder 3208 through signalsPipeline_A_Col 3253 and Read_A_Col 3254. In one embodiment, logiccircuitry 3290 may be configured inside the e1 buffer. In a differentembodiment, logic circuitry 3290 may be configured external to the e1buffer, but would have access to signals and memory within the e1 cache.

As noted above, a ROWchange signal may indicate that that a data wordand associated address should be transmitted from e1 register 104 to thepipeline structure for a verify operation. If a pseudo-dual port memorybank is used, e1 register 104 may choose a data word and an associatedaddress such that they share a common row address with a data word inthe write register of the pipeline structure. Accordingly, logiccircuitry 3290 may, in one embodiment, be added to the e1 buffer tofacilitate the selection of an appropriate read address. In oneembodiment, logic circuitry 3290 is configured to prevent simultaneousselection of a column address that is adjacent to the column addressselected by the write column decoder and Y-mux 3206. In other words, theadditional circuitry (not shown) may be configured to filter out anyaddresses from being transmitted to the read decoder 3208 that arewithin a +1 or −1 range of the write column address currently selectedby the write column decoder 3206. In one embodiment, logic module 3290comprises address compare logic to check if the address from a queuedverify is within a +1 or −1 column address away from the writeoperation.

In one embodiment, as stated above, logic module 3290 may also beprogrammed to filter out any subsequent write operations from beingtransmitted that are within a +1 or −1 range of a first write operationcurrently selected by a write column decoder.

In one embodiment, the logic module 3290 for filtering out adjacentverify or read addresses may further be configured to select anadditional address for reading (or verification) that is on the same row(that is not adjacent to the write column address selected by the writecolumn decoder 3206). The logic module prevents a simultaneousbackground verify operation when the verify (or read) address is a +1 or−1 column address from the on-going write operation and, instead,selects a different verify operation on the same row that is notadjacent to the write operation. In other words, any address within a+/−1 range of the write address selected by the write column decoder andY-mux 3206 is filtered out or de-prioritized and, alternatively, adifferent address on the same row is selected for a verify operation. Inone embodiment, de-prioritizing may entail performing the verifyoperation in a different cycle, or scheduling the verify operation to beperformed in a different cycle. Timing constraints may require anadditional row match solution to be output from the engine so that ifone of the verify addresses is within +/−1 then the alternative verifyaddress may be used.

In one embodiment, WR_A_COL 3298 (the write column address) may beinputted into the logic module 3290 and used to invalidate matches foranything with similar addresses, specifically +1 or −1 column address.

In one embodiment, if another verify operation is available in the e1buffer (e.g., e1 104) on the same row as the write operation (that isnot adjacent to the write operation) the logic circuitry 3290 wouldprioritize the non-adjacent address verify operation. In other words,the additional logic circuitry 3290 can be programmed to find anon-adjacent address on the same row that is awaiting verification fromthe error cache e1.

In one embodiment, the logic circuitry 3290 may be modified to searchfor multiple (e.g., two or three) different addresses on the same rowfor a verification operation in the same cycle. By searching formultiple possible verify operations at the same time or during the samecycle, an extra cycle is not required to search for an alternate verifyoperation on the same row in the event that a verify operation needs tobe filtered out (e.g., because it is adjacent to an on-going writeoperation). The logic operations to determine if a verify address isadjacent to an on-going write operation is not a complex one (and,therefore, does not require complex circuitry) because the address isonly a single bit (+1 or −1) removed from the write column address.

In one embodiment, the logic module 3290 is used to search for themultiple possible addresses (for verify operations) that share a commonrow address as the write operation in the same cycle that column decoderand Y-mux 3206 is writing a data word to the memory bank 1802.

In one embodiment, where multiple verify addresses are searched on thesame row, instead of filtering out addresses that are adjacent to thewrite column addresses, the adjacent addresses are simplyde-prioritized. In this embodiment, if another verify operation on thesame row (that is not adjacent to the column write address) is notfound, then an adjacent address may be used instead of being filteredout. However, if an alternate verify operation is found, any adjacentverify operation that may potentially cause bit-line coupling issues isde-prioritized.

In one embodiment, if bit-line coupling effects are high, then the logicmodule 3290 may be further configured to de-prioritize or filter outverify addresses that are not just adjacent but are proximal, e.g.,within a +2/−2, +3/−3 or even +n/−n addresses of the write operation(where n is a value less than the number of columns in the memoryarray). As mentioned above, in one embodiment, de-prioritizing may meanperforming the proximal operations in a different cycle. In oneembodiment, the logic module 3290 may comprise a register or aprogrammable trim option. In other words, the proximity value isprogrammable and set by trim. In other words, the proximity value (e.g.,+/−1, +/−2, +/−3 etc.) may be a programmable design option for thememory. Alternatively, the proximity value may be programmed into aregister on the logic module 3290.

FIG. 33 depicts an exemplary embodiment for a process flow showing themanner in which a background verify or read can be performed in the samecycle as a write operation without distortion created by bit-linecoupling effects in accordance with an embodiment of the presentinvention.

At step 3302, logic circuitry (e.g., module 3290) implemented, forexample, in an e1 buffer, searches for at least two verify operations ina dynamic redundancy register that can be performed in the background ina same cycle as a memory write operation and that occur in the samememory row as the write operation.

At step 3304, module 3290 determines if any of the at least two verifyoperations are located adjacent to the write operation—in other words,if any of the verify operations are within a +1 or −1 column address ofthe write operation. In some embodiments, module 3290 may be alsoconfigured to determine if the at least two verify operations are withina +2/−2 or a +3/−3 column address of the write operation especially incircumstances where effects of bit-line coupling are pronounced. Inthese embodiments, verify operations within a +2/−2 or a +3/−3 columnaddress of the write operation are considered to be “adjacent” verifyoperations.

At step 3306, module 3290 is configured to de-prioritize (oralternatively, filter out) any verify operations that are adjacent tothe write operation.

At step 3308, verify operations that are not de-prioritized (or filteredout) are performed in the background of the write operation.

At step 3310, responsive to a determination that no other operationswere found in the same row as the write operation besides the adjacentverify operations, perform the adjacent verify operation.

MRAM Noise Mitigation for Background Operations by Delaying VerifyTiming

As mentioned previously, FIG. 31 illustrates the manner in which noisefrom bit-line coupling may impact a verify (or read) operation if it onthe same word line or row as an adjacent write operation. One of thechallenges that may occur with the pseudo-dual port scheme ofimplementing a write operation and a background verify operation sharinga common row (word line) address is that when implementing the writeoperation, noise from bit-line coupling can impact an adjacent verify(or read) operation that is on the same row. For example, if a writeoperation is being performed on memory cell 3122, an adjacent backgroundverify (or read) operation on memory cells 3120 or 3124 may be affecteddue to capacitive effects from bit-line coupling between the bit-linesof the neighboring cells.

FIG. 34 illustrates an alternative method to addressing the problem ofbit-line coupling in accordance with an embodiment of the presentinvention. In one embodiment, in order to prevent the voltage switchingfrom the write operation 3402 from distorting the adjacent backgroundverify (or read) operation 3404 performed simultaneously, the backgroundverify (or read) operation 3404 is delayed by a threshold duration, butstill within the same clock cycle 3520 as the write operation. Forexample, the start of the verify or read operation may be delayed by 1ns from the start of the write operation. The delay has to be longenough to allow the source and bit-line from the write operation tosettle. In other words, it is preferable to avoid the bit/source linevoltage ramp time and any related ringing that can happen afterwards.

The delay prevents the write operation from aggressing the read orverify operation. It should be noted, however, that the delay cannot betoo long, otherwise, it results in the memory slowing down. It isappreciated that both operations are executed within the same clockcycle even though the verify (or read) operation is delayed.

As noted above, in connection with FIGS. 28A and 28B, the voltage forwrite operations is higher than the voltage for verify (e.g. 1.0V) andread operations (e.g. 1.2V). Accordingly, the capacitive effects frombit-line coupling from an adjacent verify operation is unlikely toaggress on the write operation (because the voltage value for a verifyoperation is lower than a write operation). Therefore, delaying theverify or read operation a threshold duration from the start of thewrite operation prevents bit-line coupling from distorting thebackground verify (or read) operation. Furthermore, because a read orverify operation is typically shorter than a write operation, the reador verify will usually finish before the write operation is completed asshown in FIG. 34.

In one embodiment, the delay is programmable and set by trim. In otherwords, the delay value may be a programmable design option for thememory. The delay value may be programmed into a register on the memorychip. In an alternative embodiment, the instead of having a programmabledelay value, a delay may be added by using gates or buffers in thecircuitry. It is appreciated that both operations (the write and theverify or read operations) are executed within the same clock cycle eventhough the verify (or read) operation is delayed.

Typically read/verify operations are shorter than write operations.Accordingly, the read/verify operation 3404 will usually complete wellbefore the write operation 3402 as shown in FIG. 34. In this case,background read/verify operations would complete before write operationhas completed, and bit/source line cleanup will proceed as normal.

In the event that the read/verify operation 3404 is longer than a writeoperation, in one embodiment, the write operation may be programmed toend after the read or verify operation. In other words, the write pulseduration may be lengthened so that the falling edge of the write pulse3408 occurs after the read pulse as shown in FIG. 34. This prevents thefalling edge of the write pulse 3408 from aggressing on the read orverify operation. In this embodiment, the background read/verifyoperation is timed to occur within the write pulse.

In one embodiment, the solution of FIG. 34 may be used instead of thesolution of FIG. 32 to avoid bit-line coupling effects.

In one embodiment, a logic module similar to module 3290 may be used inorder to insert a delay to the background verify operation to beperformed simultaneously with the write operation.

FIG. 35 depicts an exemplary embodiment for a process flow showing themanner in which a background verify or read can be delayed by athreshold amount from a write operation on the same row to preventdistortion created by bit-line coupling effects in accordance with anembodiment of the present invention.

At step 3502, logic circuitry in the error buffer (or dynamic redundancyregister coupled to the memory bank), as explained in detail above,searches for a pending verify operation that can be performed in thebackground in the same cycle as a current memory write operation, wherethe verify operation occurs in the same row as the write operation.

At step 3504, the start (or rising edge) of the background verify cycleis delayed by a threshold duration, so that the rising edge of theverify cycle occurs after the rising edge of the write cycle. Thisprevents the voltage switching from the bit-lines and source-lines fromthe write operation from corrupting the verify operation. It isappreciated that both operations are executed within the same clockcycle 3520 even though the verify (or read) operation is delayed.

The delay can be inserted by logic circuitry inside the error buffer,e.g., using a module similar to module 3290 in FIG. 32.

At step 3506, responsive to a determination that the verify operation islonger than the write operation, the falling edge of the write cycle isdelayed so that it occurs after the falling edge of the verify operation(with enough delay so that the write operation does not create bit-linecoupling effects in the verify operation).

At step 3508, responsive to a determination that the verify operation isshorter than the write operation, allow the falling edge of the verifycycle to occur without delaying the falling edge of the correspondingwrite cycle.

Error Cache Segmentation for Power Reduction

Memory designs, in which the size of the error cache or dynamicredundancy register is large, can consume significant power duringactive mode operation.

For example, the error buffer, e.g., error buffer 2614, 2110, etc.,performs address matching operations, which have significant powerrequirements. By way of example, address matching may be performed in anerror buffer to determine if a row-address of any occupied entries inthe error buffer matches with the row-address of an active address. Theentry chosen as a result of the CAM operation will be staged in theverify stage of the pipeline in the next memory cycle. The larger theerror buffer, the more power is consumed to perform a CAM (ContentAddressable Memory) search for the address matching.

Another source of power consumption in memory designs with larger errorcache sizes is pointer data structures used to prevent data collision,and identify words to be verified or rewritten. Pointers in error cachesare used, for example, among other things to keep track of emptylocations in the error cache. When entries relating to pending re-writeoperations or verify operations are first added to the error buffer,pointers are used to keep track of locations that are empty and/oroccupied. In this way, pointers may be used to prevent data collision.It should be noted that valid bits may also used to keep track oflocations in the error buffer that are occupied. Entries are placed inor removed from the error buffer using both the valid bit scheme and thepointers.

Furthermore, pointers may also be used to search for backgroundoperations e.g. background verify operations in the same row as activewrite operations that can be performed in the same cycle. In someembodiments, multiple pointer structures may also be used. A separatepointer structure may be used for keeping track of empty slots in theerror buffer, for keeping track of pending verify operations, and forkeeping track of pending re-write operations.

For example, pointers that keep track of empty locations in the errorbuffer may be referred to as ENTRY_IN pointers, pointers that keep trackof locations with data words to be re-written into the memory bank maybe referred to as REWRITE pointers, and finally, pointers that keeptrack of locations with data words to be verified may be referred to asVERIFY pointers. ENTRY_IN pointers are used to find entries in the errorcache that are available. Typically, the pointers are configured with apredetermined procedure they use to pick an entry, e.g., a simpletop-down algorithm wherein entries towards the top of the memory arepicked before entries towards the bottom of the memory. Also, it shouldbe noted that pointer structures, e.g., REWRITE, VERIFY, etc. may needto be re-evaluated every clock cycle because as cache fills up andempties the pointer data structures become invalid. The pointerstructures that keep track of the various entries in the error bufferconsume significant levels of power.

Finally, with a larger error cache, power may also be depleted in anSRAM during read/write operations due to bit-line parasitics.

As discussed in connection with FIGS. 17 and 21, a memory bank cancomprise multiple segments. In one embodiment of the present invention,dividing the error cache into several direct-mapped segments mitigatesthe power consumption especially in the case where the error cache islarge. Each segment of the error cache is direct mapped to a givenportion of memory address in a memory bank. Smaller segments reduce thepower consumed for address matching utilizing CAM memory searchtechniques because the memory space (the error buffer segment) thatneeds to be searched is reduced in size.

FIG. 36A illustrates the manner in which an error cache (e.g., acontent-addressable memory or CAM) is divided into direct-mappedsegments to mitigate high power in accordance with an embodiment of thepresent invention. As shown in FIG. 36A, each segment of the error cache3602 is direct mapped to a portion of memory bank 3606 or memory bank3604. In other words, each segment of the error cache is associated witha particular portion of the memory bank, wherein entries from theparticular portion of the memory bank can only be inputted into theassociated segment of the error cache. For example, entries associatedwith memory bank 3606 segment 1 can only be placed in error buffer 3602segment 1. Similarly, entries associated with memory bank 3604 segment 7can only be placed in error buffer 3602 segment 7. Although FIG. 36Aillustrates only two memory banks, in one embodiment, segments of theerror cache 3602 can be direct mapped to multiple memory banks.

Segmenting an error cache into direct-mapped segments, as shown in FIG.36A, has several advantages over an unsegmented fully associative cache.In an unsegmented cache, there is no physical mapping between the memorylogical or physical location of a memory word and the corresponding wordstored in the error cache. In other words, the memory word can be storedat any available location in the error cache. For example, the words canbe entered into the cache in the order in which it fills. Or, forexample, a word from the bottom of the memory bank may be entered intothe upper half of the error cache.

The unsegmented error cache is simplistic in principle and has certainadvantages. For example, the fully associative error cache maximizescache utilization because words from the memory can be entered into anyunfilled space in the error cache. Further, only a single counter may berequired to track cache utilization. In a segmented direct-mappedapproach if a particular region of a memory bank has several localizederrors, the segment of the error cache corresponding to this regionwould contain a higher proportion of entries (related to, for example,pending verifies and re-writes), thereby, risking possible overflow. Afully associative error cache avoids this problem because entries fromthe memory bank can be stored at any location in the error cache.Accordingly, a fully associative error cache minimizes effects oflocalized high error rate or bursts of random write errors.

However, a fully associative cache also suffers from severallimitations. For example, a fully associative cache requires a search ofthe entire error cache to match a row address, using a CAM search, whichcan be a high power operation when CAM memory is used. As discussedabove, address matching in a large error cache consumes significantpower. A larger memory range to search through requires more power,whereas a smaller memory range requires lesser power to do the addresssearch. Similarly, a search for pointers requires searching the entirecache, and this too is a high power operation. Furthermore, the fullyassociative error buffer has high power consumption due to the bit-linesduring read and write operations that drive the entire cache depth.Fully associative caches are also slower for memories with higherdensities.

FIG. 36B illustrates the manner in which an error cache is divided intodirect-mapped segments using a mapping module in accordance with anembodiment of the present invention. As shown in FIG. 36B, each of thesegments of error buffer 3612 is direct mapped to a correspondingsection of memory banks 3616 and 3614. In other words, there is a directmapping between address ranges of memory bank words (logical orphysical) and error cache segments. For example, segment 1 of errorbuffer 3612 maps to the address range defined by memory region 1 inmemory bank 3616. Data words and addresses from memory region 1 ofmemory bank 3616 will only be stored in segment 1 of the error buffer3612. If, for example, a write on a word in memory region 1 of bank 3616fails, the address of the word is used to determine that the word shouldbe entered into segment 1 of error buffer 3612 for a potential re-writeoperation. Similarly, segments 5 and 7 of error buffer 3612 map to theaddress ranges of memory regions 5 and 7, respectively, of memory bank3614.

In one embodiment, a memory mapping module (e.g. modules 3620 or 3630)may be used to perform the direct mapping between an address of thememory bank and the associated error buffer segment. For example, amemory mapping module may comprise mapping tables that translate theaddress of the memory bank (e.g., associated with an unsuccessful write)into a corresponding error segment. The mapping tables maintain amapping from a memory address to its corresponding error buffer segment.The mapping module, in other words, allows the memory to determine theappropriate segment of the error buffer for inserting a pending verifyor re-write operation. The mapping table may for example be storedwithin the pipeline circuitry, the error buffer itself or elsewhere onthe memory chip.

In one embodiment, the mapping may comprise non-direct mapping. In otherwords, a mapping table stored in mapping modules 3620 and 3630 may beused to perform non-direct mapping. In another embodiment, the segmentsizes of the error buffer 3612 may be non-uniform. For example, thesegment sizes of the error buffer may be configured to grow as they fillup. In one embodiment, the non-uniform segment sizes may also beconfigured to borrow area from relatively empty segments.

There are several advantages to having a segmented error cache. First,to search for a particular pointer, e.g., a pointer associated with averify or re-write operation, only the active or relevant segment of theerror cache needs to be searched instead of the entire error cache. Thissaves both time and power consumption. With a fully associative cache,the entire cache would need to be searched for a particular address ordata word. In the embodiment of FIG. 36B, if a re-write operation isassociated with an address in memory region 7 of bank 3614, the re-writeoperation will only be found in segment 7 of error buffer 3612.Accordingly, the entire e1 buffer does not need to be searched. Onlysegment 7 needs to be searched. Cache power consumption is, thereby,reduced.

Further, the power associated with parasitic effects of bit-lines andsource lines is reduced because only the bit-lines in the active segmentof the error cache need to switch. In other words, the bit-lines do notneed to traverse the entire depth of the cache and, accordingly, theyconsume much less power.

A non-direct mapped system requires a complex mapping module, which mayrequire (n) m-bit comparisons, where n=number of address bits, andm=number of segments. However, a 2{circumflex over ( )}n sized cachewith direct mapping requires only (m) address decoders, each decoderusing only log 2(m) address bits which is much simpler, from an area andpower efficiency standpoint.

The segmented error cache with direct mapping requires fewer addressbits to compare. For example, the error cache 3612 has 8 segments andaccordingly will require only 3 address bits to perform a comparisonbecause the last remaining bits will be pre-coded. So each time an entryneeds to be retrieved from the error cache, 3 address bits will berequired to perform the search. This further reduces the power and areaconsumed by the search.

The embodiments illustrated in FIGS. 36A and 36B, in certain instances,may be more susceptible to local high error bursts. For example, if aparticular region of memory has a high error rate, the correspondingsegment of the error cache may be contaminated with a disproportionatelyhigh number of words and addresses (related to words that need to bere-written or words that failed verify). This may risk overflow in thecontaminated segment of the error cache. In the case offully-associative mapping though, high error bursts in particularregions of memory is not a problem as long as the total number offailures in the memory chip conform to some expected threshold and thefailures are within a standard deviation of an average mean failurerate. A higher number of errors in a particular segment will typicallybe balanced out by lower errors in other segments.

In one embodiment, in order to track the error cache occupancy similarto FIG. 22, a separate counter would be required for each segment of thee1 buffer. The counter tracks the number of valid entries thatcorrespond to pending verify or re-write operations that need to beprocessed.

In one embodiment, if the number of write ‘1’ and write ‘0’ errors arebeing tracked separately, then two counters would be required for eachsegment, one for tracking write ‘1’ errors and the other for trackingwrite ‘0’ errors. Again, each counter tracks the number of valid entriesthat correspond to pending verify or re-write operations that need to beprocessed.

In another embodiment where memory address spaces are divided intomultiple banks, multiple counters would be required, each for trackingnumber of entries corresponding to each bank. In most simplistic casewhere there are only two banks, two counters per segment would track thenumber of active entries corresponding to each bank.

FIG. 37A depicts an exemplary embodiment 3700 for a process flow showingthe manner in which a write operation is performed for a memory bankthat comprises addresses that are mapped to corresponding segments in anerror buffer in accordance with an embodiment of the present invention.

At step 3702, a write operation is initiated for a memory bank, e.g.,memory bank 3614 or memory bank 3616.

At step 3704, responsive to an unsuccessful write or an unsuccessfulverify operation (associated with the write), a mapping module (e.g.,modules 3620 or 3630) can be used to determine a segment in an errorbuffer that maps to an address in the memory bank associated with thewrite operation.

At step 3706, the pending verify or re-write (associated with theunsuccessful write) is inserted into the corresponding segment of theerror buffer.

FIG. 37B depicts an exemplary embodiment 3750 for a process flow showingthe manner in which a read operation is performed for a memory bank thatcomprises addresses that are mapped to corresponding segments in anerror buffer in accordance with an embodiment of the present invention.

At step 3712, a read operation is initiated for a memory bank, e.g.,memory bank 3614 or memory bank 3616.

At step 3714, a mapping module (e.g., modules 3620 or 3630) is used todetermine a corresponding segment in an error buffer that maps to theaddress of the read operation. The error buffer can, therefore, bechecked to determine if the read operation has an entry in thecorresponding error buffer segment.

At step 3716, the read operation is performed if it is found in thecorresponding segment of the error buffer. Performing the read operationusing the segmented error cache results in considerable power savingsfor reasons explained above.

Error Cache System with Coarse and Fine Grain Segments for PowerOptimization

Memory designs, in which the size of the error cache or dynamicredundancy register is large, can consume significant power duringactive mode operation.

As also explained earlier, there are three types of operations that canconsume power during active mode operation. A CAM search of the errorbuffer for address matching can consume significant power. By way ofexample, address matching may be performed in an error buffer todetermine if a row-address of any occupied entries in the error buffermatches with the row-address of an active address. The entry chosen as aresult of the CAM operation will be staged in the verify stage of thepipeline in the next memory cycle. The larger the error buffer, the morepower is consumed to perform a CAM (Content Addressable Memory) searchfor the address matching.

Second, another source of power consumption in memory designs withlarger error cache sizes is pointer data structures used to prevent datacollision, and to identify words to be verified or rewritten. Pointersin error caches are used, for example, among other things to keep trackof empty locations in the error cache. When entries relating to pendingre-write operations or verify operations are first added to the errorbuffer, pointers are used to keep track of locations that are emptyand/or occupied. In this way, pointers may be used to prevent datacollision.

Furthermore, pointers may also be used to search for backgroundoperations e.g. background verify operations that can be performed inthe same cycle as active write operations. In some embodiments, multiplepointer structures may also be used. A separate pointer structure may beused for keeping track of empty slots in the error buffer, for keepingtrack of pending verify operations, and for keeping track of pendingre-write operations.

For example, pointers that keep track of empty locations in the errorbuffer may be referred to as ENTRY_IN pointers, pointers that keep trackof locations with data words to be re-written into the memory bank maybe referred to as REWRITE pointers, and finally, pointers that keeptrack of locations with data words to be verified may be referred to asVERIFY pointers. ENTRY_IN pointers are used to find entries in the errorcache that are available. Typically, the memory is configured with apredetermined procedure it uses to pick an entry, e.g., a simpletop-down algorithm wherein entries towards the top of the memory arepicked before entries towards the bottom of the memory. Also, it shouldbe noted that pointer structures, e.g., REWRITE, VERIFY, etc. need to bere-evaluated every clock cycle because as cache fills up and empties thepointer data structures become obsolete.

As noted previously, the error buffer 3616 holds write errors (forpotential re-write operations) and verifies that have not beencompleted. During an active read/write or an idle cycle, the engine, forexample, searches for a verify or a rewrite associated with the inactiveplane (in the background) in the error cache (an entry out pointeroperation), so that the pending verify or rewrite operation can beperformed in the background. These types of search pointer operationsconsume significant power during memory operation.

Finally, with a larger error cache, power may also be depleted in anSRAM during read/write operations due to bit-line parasitics.

As noted above, there are trade-offs between power consumption perpointer operation (e.g., ENTRY_IN, REWRITE, VERIFY pointers) (and memoryaddress CAM search) and risk of cache overflow when considering segmentsize for a direct mapped cache such as the one discussed in connectionwith FIG. 37. The smaller error cache segments are more power efficientbecause the entire error cache does not need to be searched for addressmatching. Searching the entire cache would drastically increase theactive and standby/idle power of the memory. However, the larger errorbuffer segments are more efficient at handling local random errorbursts, thereby, avoiding segment overflow. Therefore, the risk ofsegment overflow grows as the power consumption decreases with smallersize segments and vice versa.

In one embodiment of the present invention a mapping scheme between thememory bank and the error buffer is used that achieves reduced powerconsumption of smaller segmentation size without increased risk ofsegment overflow. The mapping scheme comprises segmenting the errorcache with a primary segmenting scheme and a secondary segmentingscheme, wherein the secondary scheme comprises sub-segmenting theprimary segments.

In designing error buffer systems, the total number of entries in theerror buffer needs to be determined by considering expected bit errorrate, word size, and worst case memory access pattern. In the errorbuffer employing coarse grain segments (as illustrated in FIGS. 36A and36B), the total number of entries is calculated as follows:N_(total_entries)=N_(segments)*N_(entries) (number of segments×number ofentries per segment).

Often, the number of total entries optimally required for the errorbuffer is not a 2 to the n number (where n is an arbitrary positiveinteger number). Having a non-2^(n) sized error buffer, isdisadvantageous for several reasons. First, full address comparison isrequired when mapping between an address of the memory bank and theassociated error buffer segment during error buffer operation. Incontrast to a non-2^(n) error buffer, a 2^(n) sized error buffer onlyrequires an m-bit address comparison where 2^(m) is equal to the totalnumber of segments in the error buffer. Second, an error buffer with anon-2^(n) number for the number of entries or segments (N_(entries) orN_(segments)) requires complex address encoding and decoding circuitscompared to one with 2′ number of entries or segments (N_(entries) orN_(segments)).

Separate from the discussion of why having non-2^(n) numbers for thenumber of entries or segments (N_(entries) or N_(segments)) results in acomplex design, as stated previously, power consumption incurred by anypointer search is approximately proportional to the number of entries tobe searched. If the span of entries to be searched is “finely” defined,the power penalty caused by pointer operation may be minimized. Simplyincreasing the number of segments (N_(segments)) in order to reduce thenumber of entries per segment (N_(entries)) does not reduce powerrequirements and implementation complexity, because additional logic totrack the status of individual segments, e.g. occupancy also becomesmore complex as the number of segments in the error buffer gets larger.

In one embodiment, in order to enable error buffers with a non-2^(n)number total number of entries, fine-grain segments scheme areimplemented. As mentioned above, the mapping scheme comprises segmentingthe error cache with a primary segmenting scheme and a secondarysegmenting scheme, wherein the secondary scheme comprises sub-segmentingthe primary segments.

To implement fine-grained segments, two-level mapping between a memoryaddress space and an error cache address is used. Conventional directmapping is used as the first mapping. In this direct mapping, there are2^(m) segments and only m-bit need to be compared to determine whichsegment is active during the error buffer operation. Once first-levelsegment selection (the coarse segmentation) is finished, there arecertain number of sub-segments included in each selected segment(fine-grained segmentation). In one embodiment, the number of entriesfor each segment is arbitrarily chosen for the optimal total number ofentries. For example, there could be 5 sub-segments (which is anon-2^(n) number) inside each segment. Scheme for selecting thesub-segments could differ depending on implementation.

FIG. 38 illustrates a mapping scheme with coarse and fine segments thatachieves the advantages of reduced power consumption of smallersegmentation size without increased risk of segment overflow inaccordance with an embodiment of the present invention.

As shown in FIG. 38, error buffer 3806 comprises a primary mapping,wherein the primary segmentation level comprises an N number ofsegments. The primary segmentation comprises segmenting the error cacheat a coarse level. It should be noted that in the exemplary illustrationof FIG. 38, N=4. However, there can be any number of primary segmentsand N may be smaller or larger depending on the memory design. In oneembodiment, N will typically be a power of 2. It should be noted thatdirect address mapping between a memory address space and an error cacheaddress is most effectively/efficiently done when mapping is uniformand, typically, a power of 2. (2^(n) where n=integer). It is desirableto have the mapping be a power of 2 because, otherwise, the primarycache segments may not be equal size, which results in complications. Asshown in FIG. 38, error buffer 3806 comprises 4 primary segments, 3810,3812, 3814 and 3816.

Error buffer 3806, in one embodiment, is further sub-divided intosecondary segments, or segments at a finer level (as compared to thecoarse level). As shown in FIG. 38, each segment of the error buffer issub-divided into m sub-segments, where each primary segment (e.g., 3810,3812, 3814 and 3816) comprises m sub-segments. Pointer operation for theerror buffer is allowed at the more granular-sized segment level—inother words, pointer operation is permitted at the sub-segment level. Asshown in FIG. 38, each primary segment, for example, may comprise 5sub-segments (e.g., sub-segment 3822, 3824 etc.) Sub-segment 3822 maycomprise 64 entries and, in the example shown in FIG. 38, sub-segment3822 is fully occupied. Sub-segment 3824 also comprising 64 entries ispartially occupied as shown in FIG. 38. The total number of entries ineach primary segment is therefore (5×64=320) for the example shown inFIG. 38. The scheme shown in FIG. 38 can, therefore, enable non power of2 segmentation as related to the number of entries in the primarysegment. For example by dividing the cache 3806 into 4 primary segmentswhere each primary segment has 5 sub-segments, each with 64 entries, thescheme enables each primary segment to comprise 320 entries (a non powerof 2 number). Similarly, the number of sub-segments in a primary segmentmay also be a non power of 2 number (e.g., 5 sub-segments in eachprimary segment as shown in FIG. 38). In this way, the optimum number ofentries or the optimum number of sub-segments within each primarysegment does not need to be a power of 2. Having a primary segment sizewhich does not divide neatly into the total cache size leaves anundesirable effect of leaving “remainder” segments which are smallerthan others, and are themselves difficult to decode.

In one embodiment, a separate counter is maintained in each of thesub-segments of each primary segment. For example, as shown in FIG. 38,primary segment 3812 comprises a counter for each of the sub-segments(e.g. counters 3890, 3891, 3892, 3893 and 3894). The counters keep trackof the number of valid entries in each of the sub-segments. In otherwords, the counter tracks the number of valid entries that correspond topending verify or re-write operations that need to be processed.

It should be noted that different memory designs may comprise adiffering number of entries per sub-segment and per primary segment.However, any memory design would need to consider the trade-offs whendetermining segment size. For example, a smaller segment size may bemore efficient from a power standpoint but may have a very high risk ofoverflow. Also, a smaller segment size would result in more counters inthe error buffer, which adds power and logic overhead.

The segmentation scheme illustrated in FIG. 38 conserves poweradvantageously in each of the three different categories discussedabove.

For example, the power associated with parasitic effects of bit-linesand source lines is reduced because only the bit-lines in the activesub-segment of the primary segment of the error cache need to switch. Inother words, the bit-lines do not need to traverse the entire depth ofthe primary segment and, accordingly, they consume much less power.

Also power is expended in priority matching operations associated withthe pointer operation. It is possible that multiple CAM entries will bediscovered when searching for possible rewrite or verify backgroundoperations. Priority matching is the process or reducing multiplediscovered cache entries to a single selected entry using some types ofselection criterion, e.g., position in cache, or others. Innon-segmented caches this could require a full cache sort of theselected entries to supply the selection criteria and develop a singleresult. If this process is limited to a single segment or sub-segment,much faster result and lower power consumption will be the benefits.

Second with respect to CAM searching, power consumption is reduced tosome degree because the sub-segments with zero counter values do notneed to be searched for address matches. For example, address matchingmay be performed in an error buffer to determine if an address in theerror buffer is obsolete. For such address matching, the sub-segmentswith zero counter values (corresponding to no entries) need not besearched because the zero counter value indicates that thosesub-segments are empty. Accordingly, power consumption is reducedbecause a CAM search does not need to be performed for the entire errorbuffer. It should be noted that this type of power savings may not besignificant in cases where there are not many sub-segments in the errorcache with counter values that are zero.

Finally, with respect to pointer operations, as stated above, pointerstructures prevent data collisions by keeping track of empty locationsin the error cache. With the scheme of FIG. 38, the counter valuesdetermine the sub-segment in which a new entry will be placed.Accordingly, power consumption with respect to pointer search operationsfor determining empty locations is reduced. Further, as notedpreviously, pointer operations are also used to identify words to beverified or re-written. With the scheme of FIG. 38, again, the countervalues are used to determine the sub-segment from which the entriescorresponding to the pending verify and re-write operations are chosen.This also results in a power savings for search pointer operationsbecause the entire primary segment does not need to be searched toselect a pending verify or re-write operation.

Heuristics for Selecting Subsegments for Entry in and Entry OutOperations in an Error Cache System with Coarse and Fine Grain Segments

In an error buffer with fine grain segments (such as the one illustratedin FIG. 38), a scheme for choosing sub-segments in which new entrieswill be inserted or from which existing entries will be emitted could bedesigned in a way that error buffer system is optimized over differentmetrics, e.g., equalizing utilization or greedy utilization over givenuser access pattern. In one embodiment, a least populated sub-segmentwithin a chosen primary segment could be selected for inserting newentries. By contrast, a most populated sub-segment within a chosenprimary segment could be selected when emitting existing entries. Insuch an embodiment, the utilization of sub-segments is equalized overthe course of error buffer operations. In this approach, counters, whichtrack a number of active entries in sub-segments, may be used todetermine which sub-segments are the least or most populated.

In another embodiment, a most populated sub-segment within a chosenprimary segment may be selected when new entry will be inserted. Thiswill maximize utilization of the most populated segment. This embodimentmay be useful because in results in more emptied sub-segments.Therefore, CAM search energy could be reduced by disabling the search inthe emptied sub-segments.

In one embodiment, the mapping between the error cache and the mainmemory is done at the primary segmentation level similar to the schemeillustrated in FIG. 37. In other words, primary segment is chosen basedon direct address mapping as discussed in relation to FIG. 37. However,pointer operation is conducted at the sub-segment level. And thesub-segment selection for the pointer operations are chosen based on achosen heuristic, e.g., a counter-based heuristic. A counter basedheuristic comprises maintaining a separate counter in each of thesub-segments of each primary segment. For example, as shown in FIG. 38,primary segment 3812 comprises a counter for each of the sub-segments(e.g. counters 3890, 3891, 3892, 3893 and 3894).

The counters keep track of the number of valid entries in each of thesub-segments. When a new entry needs to be entered into primary segment3812, e.g., an ENTRY_IN operation, the counter values are checked andthe entry is placed in a sub-segment (of primary segment 3812) with thelowest counter value. In other words, sub-segments may be chosen basedon a “least used sub-segment” criterion. Furthermore, when determining acandidate in a primary segment for removal back to the pipeline (e.g.,an entry out operation due to attempted verify or a re-write operation),the sub-segment with the highest counter value is chosen so as to removeentries from a sub-segment that is getting close to fully occupied. Inother words, sub-segments may be chosen based on a “most usedsub-segment” criterion.

The finer sub-segmentation conserves power because placing the entryinto a sub-segment avoids power loss from bit-line switching. In otherwords, the power consumption is limited to bit-line switching for thesub-segment and not the entire primary segment (the entire depth of thebit-line for the coarse segment does not need to switch).

Second, with respect to pointer operations, as stated above, pointerstructures prevent data collisions by keeping track of empty locationsin the error cache. With the scheme of FIG. 38, the counter valuesdetermine the sub-segment in which a new entry will be placed.Accordingly, power consumption with respect to pointer search operationsfor determining empty locations is reduced. Further, as notedpreviously, pointer operations are also used to identify words to beverified or re-written. With the scheme of FIG. 38, again, the countervalues are used to determine the sub-segment from which the entriescorresponding to the pending verify and re-write operations are chosen.This also results in a power savings for search pointer operationsbecause the entire primary segment does not need to be searched toselect a pending verify or re-write operation.

Finally, with respect to CAM searching, power consumption is reducedbecause the sub-segments with zero counter values do not need to besearched for address matches. For example, address matching may beperformed in an error buffer to determine if an address in the errorbuffer is obsolete. For such address matching, the sub-segments withzero counter values (corresponding to no entries) need not be searched.Accordingly, power consumption is reduced because a CAM search does notneed to be performed for the entire error buffer.

It should further be noted, that for a CAM search (which is a search ofthe error buffer for a specific address for a typical read or a writeoperation), the entire primary segment would need to be searched for theaddress (except any sub-segments that are completely empty).Accordingly, the scheme of FIG. 38 does not significantly impact thepower consumption for CAM searches. For example, if a read operationneeds to be performed in the active plane, as shown in FIG. 6, theaddress is checked in the error buffers before the memory bank. Tosearch for the read operation in the error buffer, a CAM search usingthe read address is performed. The CAM search needs to be searched inthe entire primary segment corresponding to the memory address of theread. Similarly for a write operation, the address needs to be searchedin the error buffer to ensure that a matching address is not alreadylocated in the error buffer (because, the address in the error bufferneeds to be rendered obsolete to permit the fresh write to progressforward). The CAM search for this type of operation would also beperformed in the entire primary segment associated with the address ofthe write. In one embodiment the CAM search of the primary segment canbypass those secondary sub-segments that are empty. Accordingly, someminimal power savings may result from not searching the sub-segmentswith zero counter values. The scheme of FIG. 38, as mentioned above,would not significantly impact the power consumption of this type of CAMsearch.

In one embodiment, there may be two counters per sub-segment to keeptrack of valid entries resulting from write ‘1’ errors and write ‘0’errors separately.

The scheme of FIG. 38 is able to maintain the same statistics (asrelated to overflow) as the scheme of FIG. 37 with significantlyimproved power reduction.

For example, the power associated with parasitic effects of bit-linesand source lines is significantly reduced because only the bit-lines inthe active sub-segment of the primary segment of the error cache need toswitch. In other words, the bit-lines do not need to traverse the entiredepth of the primary segment and, accordingly, they consume much lesspower.

With respect to pointer operations, as stated above, pointer structuresprevent data collisions by keeping track of empty locations in the errorcache. With the scheme of FIG. 38, the counter values determine thesub-segment in which a new entry will be placed. Accordingly, powerconsumption with respect to pointer search operations for determiningempty locations is reduced. Further, as noted previously, pointeroperations are also used to identify words to be verified or re-written.With the scheme of FIG. 38, again, the counter values are used todetermine the sub-segment from which the entries corresponding to thepending verify and re-write operations are chosen. This also results ina power savings for search pointer operations because the entire primarysegment does not need to be searched to select a pending verify orre-write operation.

FIG. 39 illustrates the manner in which sub-segments may be chosen forentry-in and entry-out operations based on counter values in accordancewith an embodiment of the present invention. As noted previously, thecounters keep track of the number of entries in each of thesub-segments. When a new entry needs to be entered into primary segment3902, e.g., an ENTRY_IN operation, the counter values associated witheach of the sub-segments are checked and the entry is placed in asub-segment with the lowest counter value in accordance with the “leastused sub-segment” criterion (or heuristic). In the example of FIG. 39then, sub-segment 3 would be picked which has the lowest counter valueof 11. Furthermore, when determining a candidate in a primary segmentfor removal (e.g., an entry out operation due to attempted verify or are-write), the sub-segment with the highest counter value is chosen inaccordance with the “most used sub-segment” criterion. In the example ofFIG. 39 then, sub-segment 1 would be picked which has the highestcounter value of 53.

In a different embodiment, different heuristics may be used for choosingsub-segments for entry-in and entry-out operations (besides the “leastused sub-segment” and “most used sub-segment” counter based heuristicsdiscussed above). For example, a “priority by address space” heuristicmay be used to select sub-segments for entry-in and entry-outoperations. If certain sections or address spaces of memory are, forinstance, more likely to fail than others and there is informationavailable pertaining to the address spaces that are more prone tofailure (either due to a known root cause or from observations madeduring testing), then the corresponding error cache-emptying policiesare chosen to take into account the address spaces that are susceptibleto failure. By way of example, sub-segments of the error buffercorresponding to such address spaces of memory may be prioritized forentry-out operations. Because those sub-segments are much likelier thanothers to fill up faster, prioritizing the sub-segments for entry-outoperation prevents overflow. In one embodiment, a combination of acounter based and an address-space based heuristic may be used.

FIG. 40 depicts an exemplary embodiment for a process flow showing themanner in which power consumption can be optimized for an error cache inaccordance with an embodiment of the present invention.

At step 4002, the error cache is divided into a plurality of primarysegments, where each primary segment is direct mapped to a correspondingportion of a memory bank. As mentioned in connection with FIG. 36B, inone embodiment, the mapping may comprise non-direct mapping. In otherwords, a mapping table stored (e.g. stored in mapping modules 3620 and3630) may be used to perform non-direct mapping.

At step 4004, each of the primary segments is sub-divided into apredetermined number of sub-segments. In other words, the error cache issub-divided into a plurality of secondary segments with each primarysegment comprising a predetermined number of secondary segments.

At step 4006, each of the secondary segments comprises a counter to keeptrack of the number of entries (e.g. corresponding to re-write orpending verify operations) in the respective secondary segment.

At step 4008, a pointer operation is performed in a primary segment ofthe error cache, wherein a secondary segment within the primary segmentis chosen for performing the pointer operation based on a value of arespective counter for the secondary segment. The pointer operation maybe one of several methods of accessing the error cache, including, anentry in operation or an entry out operation. For example, for an entryin operation, a secondary segment with the lowest count may be chosen.Similarly, for an entry out operation, a secondary segment with thehighest count may be chosen. Details regarding choosing the appropriatesub-segment or secondary segment are discussed in relation to FIG. 39.

Determining an Inactive Memory Bank During an Idle Memory Cycle toPrevent Error Cache Overflow

As discussed in connection with FIG. 17, a memory bank can be segmentedin accordance with an embodiment of the present invention. As shown inFIG. 17, a memory bank can be split into segments, memory bank A 1702and memory bank B 1703. Furthermore, there may be multiple memory banksin a given memory design.

Typically, during a particular memory cycle, e.g., a read or a writecycle, one of the banks will be active (the bank being written to orread from) and the other bank will be inactive. While no activeoperations in the pipeline may be performed on the inactive bank, theremay still be certain background operations that can be performed in theinactive bank. As noted previously, the error buffer, e.g., error buffer3602 holds write errors (for potential re-write operations) and verifiesthat have not been completed. During an active read/write or an idlecycle, the engine searches for a verify or a rewrite associated with theinactive bank (in the background) in the error cache, so that anypending verify or rewrite operation that needs to be completed can beperformed in the background.

A memory cycle in which no active operations need to be performed (e.g.,a read or a write) is called a no-op cycle. Even though no activeoperations are being performed during a no-op cycle, backgroundoperations related to pending verify and re-write operations continue tobe performed. Accordingly, it is important to have establish criteria todefine which of the two or more memory banks will be designated as theinactive state during a no-op cycle.

FIGS. 41A to 41C illustrate the different states in which two memorybanks in a memory design can operate in accordance with an embodiment ofthe present invention. In FIG. 41A, memory bank A 4104 (associated withpipeline 4102) is the inactive bank in which background operations maybe performed. Meanwhile, the second memory bank associated with pipeline4102, memory bank B 4106, is the active memory bank in which active readand write operations are performed. In FIG. 41B, however, memory bank A4104 is the active bank in which read/write operations are performedwhile memory bank B 4106 is inactive. In FIG. 41C, the memory is in ano-op cycle where both memory bank A and memory bank B are notperforming any active operations. Even though no active operations arebeing performed in either memory bank A or B during the no-op cycle,background operations related to pending verify and re-write operationsmay continue to be performed for the inactive bank. Accordingly, asstated above, it is important to designate criteria to define which ofthe two memory banks in FIG. 41C will be the ‘inactive’ bank. In oneembodiment, during a no-op cycle background operations may continue tobe performed by both memory bank A and memory bank B, however, theinactive bank will process the background operations more efficiently.

Because background operations continue to be performed during a no-opcycle, and, further because the inactive bank will continue to processbackground operations, it is advantageous to select the memory bank withthe greater number of corresponding entries in the error buffer as theinactive bank during a no-op cycle. If the memory bank with the greaternumber of entries in the error buffer is selected as the inactive bankduring a no-op cycle, it will continue to process any entriescorresponding to pending verifies and re-writes in the background duringthe no-op cycle.

In one embodiment, a counter is configured for each memory bank to keeptrack of the number of entries in the error buffer corresponding to therespective memory bank. For example, for the exemplary memory design ofFIG. 17, a separate counter would be configured for each of memory bankA 1702 and memory bank B 1703. The counter corresponding to memory bankA would keep track of the number of entries in the error bufferassociated with errors in memory bank A. Similarly, the countercorresponding to memory bank B would keep track of the number of entriesin the error buffer associated with errors in memory bank B.

The values of the counters determine which of the memory banks will bedetermined to be the inactive bank during the no-op cycle. In oneembodiment, the memory bank associated with the counter with the highestvalue is picked as the inactive bank during the no-op cycle. Becauseoperations pertaining to the inactive plane are processed in thebackground during a no-op cycle, it is advantageous to pick the memorythat has the highest number of associated errors. The no-op cycle canthen be used as an opportunity to reduce the number of entries in theerror buffer corresponding to the memory bank with the highest number oferrors. In one embodiment, even in a design with multiple memory banks,the memory bank with the highest associated counter value is selected asthe inactive bank during a no-op cycle.

FIG. 42 illustrates the manner in which counters associated with eachmemory bank can be used to determine which memory bank to designate asthe inactive bank during a no-op cycle in accordance with an embodimentof the present invention.

As shown in FIG. 42, when an entry associated with a particular memorybank is entered into the error cache 4208 the corresponding countervalue associated with the memory bank is increased. Similarly, if anentry is removed the corresponding counter value associated with thememory bank is decreased. For example, when an entry 4250 (for a verifyor re-write operation) that is associated with memory bank A 4202 isentered into error cache 4208, the counter value for counter 4224 isincreased. On the other hand when an entry 4252 is removed from theerror cache 4208, the counter value for counter 4224 is decreased.

Similarly, counter 4220 is used to track entries in the error cache 4208associated with memory bank B 4204. Counter 4222 is used to trackentries in the error cache 4208 associated with memory bank C 4206. Eachof the counter values may be inputted into an inactive bank determiner4280 to determine which has the highest counter value. The memory bankassociated with the counter that has the highest value will bedesignated as the inactive memory bank during a no-op cycle.

In one embodiment, where the error cache is segmented at the coarselevel, e.g., the error cache of FIG. 36B, the inactive bank is definedas the bank that has the most entries in the error cache as determinedby the corresponding counter values. For example, if the counterassociated with memory bank 3614 has a higher value, memory bank 3614would be chosen as the inactive bank during the no-op cycle.

In a different embodiment, where the error cache supports both coarseand fine segmentation, the inactive bank is defined as the bank whichcorresponds to the segment with the highest occupancy. In oneembodiment, each segment can comprise a separate counter to keep trackof the number of entries within the respective segment. Because eachsegment comprises a separate counter, picking the bank which correspondsto the segment with the highest occupancy, allows the entries in thesegment to be potentially drained during the no-op cycle, thereby,preventing overflow. For example, referring to FIG. 38, each of theprimary segments 3810, 3812, 3814, and 3816 directly map to a segment ofan associated memory bank. Primary segments 3810, 3812, 3814, and 3816may, for example, each map to a different associated memory bank. Or,for example, primary segments 3810 and 3812 may map to a first memorybank while primary segments 3814 and 3816 may map to a second memorybank. In this embodiment, the memory bank that corresponds to thehighest occupancy segment (for example, the memory bank that maps to theprimary segment of the error buffer that has the highest counter-summedvalue) will be elected as the inactive bank. Stated differently, todetermine the highest occupancy primary segment, the counter values ofall the sub-segments in the primary segment are added up. For example,if the sum of counters 3890:3894 of primary segment 3812 has the highestcounter-summed value of all the other segments of error buffer 3806,then the memory bank that corresponds to primary segment 3812 is electedas the inactive bank. Similarly, if the counter-summed value associatedwith sub-segments 3822:3826 of primary segment 3810 has the highestcounter-summed value of all the other segments of error buffer 3806,then the memory bank that corresponds to primary segment 3810 is electedas the inactive bank.

FIG. 43 depicts an exemplary embodiment for a process flow showing themanner in which an inactive memory bank is chosen for a no-op cycle in amemory with two or more memory banks in accordance with an embodiment ofthe present invention.

At step 4301, a counter is maintained for each memory bank in a memory.Each counter maintains a count of a number of entries in an error buffercorresponding to the respective memory bank. For example, a memory bankwith several errors will have a high corresponding number of entries inthe memory bank.

At step 4302, it is determined if the memory is in a no-op cycle.

At step 4304, responsive to a no-op memory cycle determination, adetermination is made as to which of the counters associated with theone or more memory banks has the highest value.

At step 4306, the memory bank with the highest corresponding countervalue is chosen as the inactive bank during the no-op cycle.

At step 4308, the designated inactive bank is used for processingbackground operations such as verifies or re-writes. At step 4310,during a next memory cycle, the process starts over at step 4302 bydetermining if the next memory cycle is a no-op cycle.

At step 4316, responsive to a determination that the pipeline is not ina no-op cycle, the bank that does not have an active read/writeoperation being processed is chosen as the inactive bank. Again, at step4310, the determination of whether the next memory cycle is a no-opcycle starts anew at step 4302.

The above description and drawings are only to be consideredillustrative of specific embodiments, which achieve the features andadvantages described herein. Modifications and substitutions to specificprocess conditions can be made. Accordingly, the embodiments in thispatent document are not considered as being limited by the foregoingdescription and drawings.

We claim:
 1. A memory device for storing data, the memory devicecomprising: a memory bank comprising a plurality of addressable memorycells, wherein the memory bank is divided into a plurality of segments;a pipeline configured to process write operations of a first pluralityof data words addressed to the memory bank; and a cache memory operablefor storing a second plurality of data words and associated memoryaddresses, wherein the second plurality of data words are a subset ofthe first plurality of data words, wherein the cache memory isassociated with the memory bank and wherein further each data word ofthe second plurality of data words is either awaiting write verificationassociated with the memory bank or is to be re-written into the memorybank, wherein the cache memory is divided into a plurality of primarysegments, wherein each primary segment of the cache memory is directmapped to a corresponding segment of the plurality of segments of thememory bank, wherein each primary segment of the plurality of primarysegments of the cache memory is sub-divided into a plurality ofsecondary segments, and each of the plurality of secondary segmentscomprises at least one counter for tracking a number of valid entriesstored therein, and wherein a secondary segment for storing a data wordfrom the second plurality of data words is selected based on a selectioncriterion.
 2. The memory device of claim 1, wherein a number of theplurality of primary segments is a power of
 2. 3. The memory device ofclaim 1, wherein each of the plurality of primary segments comprises asame number of secondary segments.
 4. The memory device of claim 1,wherein a number of total entries in a primary segment of the pluralityof primary segments is a non power of
 2. 5. The memory device of claim1, wherein a number of secondary segments in each of the plurality ofprimary segments is a non power of
 2. 6. The memory device of claim 1,wherein each secondary segment is associated with two respectivecounters to track a number of valid entries corresponding to write 1errors and a number of valid entries corresponding to write 0 errorsstored therein.
 7. The memory device of claim 1, wherein the memory bankcomprises a plurality of magnetic random access memory (MRAM) cells. 8.The memory device of claim 1, wherein the memory bank comprises aplurality of spin-transfer torque magnetic random access memory(STT-MRAM) cells.
 9. A memory device for storing data, the memory devicecomprising: a plurality of memory banks, each comprising a plurality ofaddressable memory cells, wherein each of the plurality of memory banksis divided into a plurality of segments; a pipeline configured toprocess write operations of a first plurality of data words addressed tothe plurality of memory banks; and a cache memory operable for storing asecond plurality of data words and associated memory addresses, whereinthe second plurality of data words are a subset of the first pluralityof data words, wherein the cache memory is associated with the pluralityof memory banks and wherein further each data word of the secondplurality of data words is either awaiting write verification associatedwith a bank from the plurality of memory banks or is to be re-writteninto a bank from the plurality of memory banks, wherein the cache memoryis divided into a plurality of primary segments, wherein each primarysegment of the cache memory is direct mapped to a corresponding segmentof the plurality of segments of the plurality of memory banks, whereineach primary segment of the plurality of primary segments of the cachememory is sub-divided into a plurality of secondary segments, whereineach of the plurality of secondary segments comprises at least onecounter for tracking a number of valid entries stored therein, andwherein a secondary segment from the plurality of secondary segments isselected for performing an access operation based on a selectioncriterion.
 10. The memory device of claim 9, wherein each of theplurality of primary segments comprises an equal number of secondarysegments.
 11. The memory device of claim 9, wherein each secondarysegment is associated with two respective counters to track of a numberof valid entries corresponding to write 1 errors and a number of validentries corresponding to write 0 errors stored therein.
 12. The memorydevice of claim 9, wherein the memory bank comprises a plurality ofmagnetic random access memory (MRAM) cells.
 13. The memory device ofclaim 9, wherein the memory bank comprises a plurality of spin-transfertorque magnetic random access memory (STT-MRAM) cells.
 14. A memorydevice comprising: a memory bank comprising a plurality of magneticrandom access memory (MRAM) cells, wherein each memory cell isconfigured to store a data word at a respective one of a plurality ofmemory addresses, and wherein the memory bank is divided into aplurality of segments; a dynamic redundancy register comprising datastorage elements, wherein the dynamic redundancy register is dividedinto a plurality of primary segments, wherein each primary segment ofthe dynamic redundancy register is direct mapped to a correspondingsegment of the plurality of segments of the memory bank, wherein eachprimary segment of the plurality of primary segments of the dynamicredundancy register is sub-divided into a plurality of secondarysegments, and wherein each of the plurality of secondary segmentscomprises at least one counter for tracking a number of entries in arespective secondary segment; and a pipeline bank coupled to the memorybank and the dynamic redundancy register, wherein the pipeline bank isconfigured to: write a data word into a segment of the memory bank thatcorresponds to a selected address of the plurality of memory addresses;verify the data word written into the memory bank to determine whetherthe data word was successfully written; and responsive to adetermination that the data word was not successfully written, writingthe data word and the selected address into a selected secondary segmentof a selected primary segment of the dynamic redundancy register,wherein the selected primary segment directly maps to the segment of thememory bank associated with the selected address of the data word, andwherein the selected secondary segment is selected based on a selectioncriteria.
 15. The memory device of claim 15, wherein the selectedsecondary segment within the primary segment for storing the data wordin the dynamic redundancy register is selected based on a counter valueof the selected secondary segment
 16. The memory device of claim 15,wherein each secondary segment of the dynamic redundancy register isassociated with two respective counters to track a number of validentries corresponding to write 1 errors and a number of valid entriescorresponding to write 0 errors stored therewithin.
 17. The memorydevice of claim 15, wherein a direct mapping between the plurality ofprimary segments of the dynamic redundancy register and the plurality ofsegments of the memory bank comprise a logical mapping.
 18. The memorydevice of claim 15, wherein a direct mapping between the plurality ofprimary segments of the dynamic redundancy register and the plurality ofsegments of the memory bank comprise a physical mapping.
 19. The memorydevice of claim 14, wherein the memory bank comprises a plurality ofmagnetic random access memory (MRAM) cells.
 20. The memory device ofclaim 14, wherein power consumed by a secondary segment is limited to asize of the secondary segment, wherein the size of the secondary segmentis smaller than a size of a primary segment.